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                             27 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 An analytical mobility model for square Gate-All-Around MOSFETs Tienda-Luna, I.M.
 2013
 90 C p. 18-22
5 p.
 artikel
2 A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration Diab, A.
 2013
 90 C p. 127-133
7 p.
 artikel
3 A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors Trevisoli, Renan Doria
 2013
 90 C p. 12-17
6 p.
 artikel
4 A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications Wan, Jing
 2013
 90 C p. 2-11
10 p.
 artikel
5 Bandstructure and mobility variations in p-type silicon nanowires under electrostatic gate field Neophytou, Neophytos
 2013
 90 C p. 44-50
7 p.
 artikel
6 Characterization and optimization of partially depleted SOI MOSFETs for high power RF switch applications Im, Donggu
 2013
 90 C p. 94-98
5 p.
 artikel
7 Characterization of heavily doped SOI wafers under pseudo-MOSFET configuration Liu, F.Y.
 2013
 90 C p. 65-72
8 p.
 artikel
8 Comprehensive study of the statistical variability in a 22nm fully depleted ultra-thin-body SOI MOSFET Mohd Zain, Anis Suhaila
 2013
 90 C p. 51-55
5 p.
 artikel
9 DC and low frequency noise performances of SOI p-FinFETs at very low temperature Achour, H.
 2013
 90 C p. 160-165
6 p.
 artikel
10 Editorial Board 2013
 90 C p. IFC-
1 p.
 artikel
11 Foreword Bawedin, Maryline
 2013
 90 C p. 1-
1 p.
 artikel
12 Impact ionization induced dynamic floating body effect in junctionless transistors Yu, R.
 2013
 90 C p. 28-33
6 p.
 artikel
13 Low-frequency noise of n-type triple gate FinFETs fabricated on standard and 45° rotated substrates Doria, Rodrigo Trevisoli
 2013
 90 C p. 121-126
6 p.
 artikel
14 Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors Chang, Sung-Jae
 2013
 90 C p. 134-142
9 p.
 artikel
15 Modeling of low frequency noise in FD SOI MOSFETs El Husseini, J.
 2013
 90 C p. 116-120
5 p.
 artikel
16 Normally-off GaN MOSFETs on insulating substrate Kim, Dong-Seok
 2013
 90 C p. 79-85
7 p.
 artikel
17 On the extension of ET-FDSOI roadmap for 22nm node and beyond Sampedro, C.
 2013
 90 C p. 23-27
5 p.
 artikel
18 Operation and stability analysis of bipolar OxRRAM-based Non-Volatile 8T2R SRAM as solution for information back-up Hraziia,
 2013
 90 C p. 99-106
8 p.
 artikel
19 Optimizing the front and back biases for the best sense margin and retention time in UTBOX FBRAM Almeida, Luciano Mendes
 2013
 90 C p. 149-154
6 p.
 artikel
20 Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics Lecavelier des Etangs-Levallois, A.
 2013
 90 C p. 73-78
6 p.
 artikel
21 Revisited parameter extraction methodology for electrical characterization of junctionless transistors Jeon, D.-Y.
 2013
 90 C p. 86-93
8 p.
 artikel
22 Stress engineering and proton radiation influence on off-state leakage current in triple-gate SOI devices Agopian, Paula Ghedini Der
 2013
 90 C p. 155-159
5 p.
 artikel
23 Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances Ben Akkez, Imed
 2013
 90 C p. 143-148
6 p.
 artikel
24 Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs Osintsev, Dmitri
 2013
 90 C p. 34-38
5 p.
 artikel
25 Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region Holtij, Thomas
 2013
 90 C p. 107-115
9 p.
 artikel
26 Transistors on hybrid UTBB/Bulk substrates fabricated by local internal BOX dissolution Nguyen, P.
 2013
 90 C p. 39-43
5 p.
 artikel
27 UTBB SOI MOSFETs analog figures of merit: Effects of ground plane and asymmetric double-gate regime Md Arshad, M.K.
 2013
 90 C p. 56-64
9 p.
 artikel
                             27 gevonden resultaten
 
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