| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
|
Vandooren, A.
|
|
2013
|
83 |
C |
p. 50-55
6 p.
|
artikel
|
| 2 |
Analysis of USJ formation with combined RTA/laser annealing conditions for 28nm high-k/metal gate CMOS technology using advanced TCAD for process and device simulation
|
Bazizi, E.M.
|
|
2013
|
83 |
C |
p. 61-65
5 p.
|
artikel
|
| 3 |
Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2
|
Lucovsky, Gerald
|
|
2013
|
83 |
C |
p. 30-36
7 p.
|
artikel
|
| 4 |
Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method
|
Usuda, Koji
|
|
2013
|
83 |
C |
p. 46-49
4 p.
|
artikel
|
| 5 |
Charge carrier traffic at self-assembled Ge quantum dots on Si
|
Kaniewska, M.
|
|
2013
|
83 |
C |
p. 99-106
8 p.
|
artikel
|
| 6 |
Development of epitaxial growth technology for Ge1− x Sn x alloy and study of its properties for Ge nanoelectronics
|
Nakatsuka, Osamu
|
|
2013
|
83 |
C |
p. 82-86
5 p.
|
artikel
|
| 7 |
Editorial
|
King Liu, Tsu-Jae
|
|
2013
|
83 |
C |
p. 1-
1 p.
|
artikel
|
| 8 |
Editorial Board
|
|
|
2013
|
83 |
C |
p. IFC-
1 p.
|
artikel
|
| 9 |
Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure
|
Kato, Kimihiko
|
|
2013
|
83 |
C |
p. 56-60
5 p.
|
artikel
|
| 10 |
Epitaxial growth and anisotropic strain relaxation of Ge1− x Sn x layers on Ge(110) substrates
|
Asano, Takanori
|
|
2013
|
83 |
C |
p. 71-75
5 p.
|
artikel
|
| 11 |
Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers
|
Moriyama, Yoshihiko
|
|
2013
|
83 |
C |
p. 42-45
4 p.
|
artikel
|
| 12 |
Ge quantum well optoelectronic devices for light modulation, detection, and emission
|
Chaisakul, P.
|
|
2013
|
83 |
C |
p. 92-98
7 p.
|
artikel
|
| 13 |
Low temperature RPCVD epitaxial growth of Si1− x Ge x using Si2H6 and Ge2H6
|
Wirths, S.
|
|
2013
|
83 |
C |
p. 2-9
8 p.
|
artikel
|
| 14 |
Morphology evolution of epitaxial SiGe and Si in patterns
|
Seiss, Birgit
|
|
2013
|
83 |
C |
p. 18-24
7 p.
|
artikel
|
| 15 |
Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains
|
Hartmann, J.M.
|
|
2013
|
83 |
C |
p. 10-17
8 p.
|
artikel
|
| 16 |
n-Si–p-Si1− x Ge x nanowire arrays for thermoelectric power generation
|
Xu, Bin
|
|
2013
|
83 |
C |
p. 107-112
6 p.
|
artikel
|
| 17 |
Phosphorus atomic layer doping in Ge using RPCVD
|
Yamamoto, Yuji
|
|
2013
|
83 |
C |
p. 25-29
5 p.
|
artikel
|
| 18 |
Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates
|
Kaschel, Mathias
|
|
2013
|
83 |
C |
p. 87-91
5 p.
|
artikel
|
| 19 |
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
|
Wang, Lanxiang
|
|
2013
|
83 |
C |
p. 66-70
5 p.
|
artikel
|
| 20 |
Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization
|
Ding, Yinjie
|
|
2013
|
83 |
C |
p. 37-41
5 p.
|
artikel
|
| 21 |
Terahertz imaging using strained-Si MODFETs as sensors
|
Meziani, Y.M.
|
|
2013
|
83 |
C |
p. 113-117
5 p.
|
artikel
|
| 22 |
The SiGeSn approach towards Si-based lasers
|
Sun, G.
|
|
2013
|
83 |
C |
p. 76-81
6 p.
|
artikel
|
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