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                             43 results found
no title author magazine year volume issue page(s) type
1 Accurate small signal modeling and extraction of silicon MOSFET for RF IC application Tang, Yang
 2010
 54 11 p. 1312-1318
7 p.
 article
2 A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique Cho, Moonju
 2010
 54 11 p. 1384-1391
8 p.
 article
3 AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study Hayashi, Y.
 2010
 54 11 p. 1367-1371
5 p.
 article
4 Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation Kamada, Yudai
 2010
 54 11 p. 1392-1397
6 p.
 article
5 Analysis of transient behavior of AlGaN/GaN MOSHFET Hayashi, Y.
 2010
 54 11 p. 1451-1456
6 p.
 article
6 Analytical current equation for short channel SOI multigate FETs including 3D effects Kloes, Alexander
 2010
 54 11 p. 1408-1415
8 p.
 article
7 An analytical model for square GAA MOSFETs including quantum effects Moreno, E.
 2010
 54 11 p. 1463-1469
7 p.
 article
8 A new analytical high frequency noise parameter model for AlGaN/GaN HEMT Cheng, Xiaoxu
 2010
 54 11 p. 1300-1303
4 p.
 article
9 A new vertical MOSFET “Vertical Logic Circuit (VLC) MOSFET” suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit Sakui, Koji
 2010
 54 11 p. 1457-1462
6 p.
 article
10 A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison Frégonèse, Sébastien
 2010
 54 11 p. 1332-1338
7 p.
 article
11 Bipolar magnetotransistor sensor with digital output Tikhonov, R.D.
 2010
 54 11 p. 1488-1491
4 p.
 article
12 Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED Tu, S.H.
 2010
 54 11 p. 1438-1443
6 p.
 article
13 Comparison and improvement of two core compact models for double-gate MOSFETs Zhou, Xingye
 2010
 54 11 p. 1444-1446
3 p.
 article
14 Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaO x and HfO2/AlO x dielectric stacks Lu, Chun-Chang
 2010
 54 11 p. 1474-1478
5 p.
 article
15 Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors Driad, R.
 2010
 54 11 p. 1343-1348
6 p.
 article
16 2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET Schwarz, Mike
 2010
 54 11 p. 1372-1380
9 p.
 article
17 Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs Lancry, O.
 2010
 54 11 p. 1434-1437
4 p.
 article
18 Editorial Board 2010
 54 11 p. IFC-
1 p.
 article
19 Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs Santillan-Quiñonez, Gerard F.
 2010
 54 11 p. 1239-1245
7 p.
 article
20 Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils Moon, Jaehyun
 2010
 54 11 p. 1326-1331
6 p.
 article
21 High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator Dong, Zhihua
 2010
 54 11 p. 1339-1342
4 p.
 article
22 Impact of circuit assist methods on margin and performance in 6T SRAM Mann, Randy W.
 2010
 54 11 p. 1398-1407
10 p.
 article
23 Impact of transparent conductive oxide on the admittance of thin film solar cells Principato, F.
 2010
 54 11 p. 1284-1290
7 p.
 article
24 Improving the cell characteristics using arch-active profile in NAND flash memory having 60nm design-rule Kang, Daewoong
 2010
 54 11 p. 1263-1268
6 p.
 article
25 Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films Kar, J.P.
 2010
 54 11 p. 1447-1450
4 p.
 article
26 Infrared light emitting device with two color emission Das, Naresh C.
 2010
 54 11 p. 1381-1383
3 p.
 article
27 Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors Wang, M.C.
 2010
 54 11 p. 1485-1487
3 p.
 article
28 Modeling local electrical fluctuations in 45nm heavily pocket-implanted bulk MOSFET Mezzomo, Cecilia M.
 2010
 54 11 p. 1359-1366
8 p.
 article
29 Multiple gate NVM cells with improved Fowler–Nordheim tunneling program and erase performances Gerardi, C.
 2010
 54 11 p. 1319-1325
7 p.
 article
30 On the possibility of improving silicon solar cell efficiency through impurity photovoltaic effect and compensation Pavel, Akeed A.
 2010
 54 11 p. 1278-1283
6 p.
 article
31 Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Storm, D.F.
 2010
 54 11 p. 1470-1473
4 p.
 article
32 Reconfigurable Special Test Circuit of physics-based IGBT models parameter extraction Rodríguez, Marco A.
 2010
 54 11 p. 1246-1256
11 p.
 article
33 Retention modeling of nanocrystalline flash memories: A Monte Carlo approach Ghosh, Bahniman
 2010
 54 11 p. 1295-1299
5 p.
 article
34 Scaling projections for Sb-based p-channel FETs Ancona, M.G.
 2010
 54 11 p. 1349-1358
10 p.
 article
35 Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation Yang, Peizhen
 2010
 54 11 p. 1304-1311
8 p.
 article
36 Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity Wang, Lingquan
 2010
 54 11 p. 1257-1262
6 p.
 article
37 Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes Jander, Albrecht
 2010
 54 11 p. 1479-1484
6 p.
 article
38 Solvent dependent behaviour of poly(9-vinylcarbazole)-based polymer light emitting diodes Alonso, J.L.
 2010
 54 11 p. 1269-1272
4 p.
 article
39 Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors Arulkumaran, S.
 2010
 54 11 p. 1430-1433
4 p.
 article
40 The effect of photodiode shape on charge transfer in CMOS image sensors Shin, Bhumjae
 2010
 54 11 p. 1416-1420
5 p.
 article
41 Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces Tripathi, N.
 2010
 54 11 p. 1291-1294
4 p.
 article
42 Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET Sarkar, Sudipta
 2010
 54 11 p. 1421-1429
9 p.
 article
43 Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs Barrett, C.
 2010
 54 11 p. 1273-1277
5 p.
 article
                             43 results found
 
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