| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Accurate small signal modeling and extraction of silicon MOSFET for RF IC application
|
Tang, Yang
|
|
2010
|
54 |
11 |
p. 1312-1318
7 p.
|
artikel
|
| 2 |
A consistent model for oxide trap profiling with the Trap Spectroscopy by Charge Injection and Sensing (TSCIS) technique
|
Cho, Moonju
|
|
2010
|
54 |
11 |
p. 1384-1391
8 p.
|
artikel
|
| 3 |
AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study
|
Hayashi, Y.
|
|
2010
|
54 |
11 |
p. 1367-1371
5 p.
|
artikel
|
| 4 |
Analysis of subthreshold photo-leakage current in ZnO thin-film transistors using indium-ion implantation
|
Kamada, Yudai
|
|
2010
|
54 |
11 |
p. 1392-1397
6 p.
|
artikel
|
| 5 |
Analysis of transient behavior of AlGaN/GaN MOSHFET
|
Hayashi, Y.
|
|
2010
|
54 |
11 |
p. 1451-1456
6 p.
|
artikel
|
| 6 |
Analytical current equation for short channel SOI multigate FETs including 3D effects
|
Kloes, Alexander
|
|
2010
|
54 |
11 |
p. 1408-1415
8 p.
|
artikel
|
| 7 |
An analytical model for square GAA MOSFETs including quantum effects
|
Moreno, E.
|
|
2010
|
54 |
11 |
p. 1463-1469
7 p.
|
artikel
|
| 8 |
A new analytical high frequency noise parameter model for AlGaN/GaN HEMT
|
Cheng, Xiaoxu
|
|
2010
|
54 |
11 |
p. 1300-1303
4 p.
|
artikel
|
| 9 |
A new vertical MOSFET “Vertical Logic Circuit (VLC) MOSFET” suppressing asymmetric characteristics and realizing an ultra compact and robust logic circuit
|
Sakui, Koji
|
|
2010
|
54 |
11 |
p. 1457-1462
6 p.
|
artikel
|
| 10 |
A versatile compact model for ballistic 1D transistor: GNRFET and CNTFET comparison
|
Frégonèse, Sébastien
|
|
2010
|
54 |
11 |
p. 1332-1338
7 p.
|
artikel
|
| 11 |
Bipolar magnetotransistor sensor with digital output
|
Tikhonov, R.D.
|
|
2010
|
54 |
11 |
p. 1488-1491
4 p.
|
artikel
|
| 12 |
Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED
|
Tu, S.H.
|
|
2010
|
54 |
11 |
p. 1438-1443
6 p.
|
artikel
|
| 13 |
Comparison and improvement of two core compact models for double-gate MOSFETs
|
Zhou, Xingye
|
|
2010
|
54 |
11 |
p. 1444-1446
3 p.
|
artikel
|
| 14 |
Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaO x and HfO2/AlO x dielectric stacks
|
Lu, Chun-Chang
|
|
2010
|
54 |
11 |
p. 1474-1478
5 p.
|
artikel
|
| 15 |
Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors
|
Driad, R.
|
|
2010
|
54 |
11 |
p. 1343-1348
6 p.
|
artikel
|
| 16 |
2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET
|
Schwarz, Mike
|
|
2010
|
54 |
11 |
p. 1372-1380
9 p.
|
artikel
|
| 17 |
Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs
|
Lancry, O.
|
|
2010
|
54 |
11 |
p. 1434-1437
4 p.
|
artikel
|
| 18 |
Editorial Board
|
|
|
2010
|
54 |
11 |
p. IFC-
1 p.
|
artikel
|
| 19 |
Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs
|
Santillan-Quiñonez, Gerard F.
|
|
2010
|
54 |
11 |
p. 1239-1245
7 p.
|
artikel
|
| 20 |
Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils
|
Moon, Jaehyun
|
|
2010
|
54 |
11 |
p. 1326-1331
6 p.
|
artikel
|
| 21 |
High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator
|
Dong, Zhihua
|
|
2010
|
54 |
11 |
p. 1339-1342
4 p.
|
artikel
|
| 22 |
Impact of circuit assist methods on margin and performance in 6T SRAM
|
Mann, Randy W.
|
|
2010
|
54 |
11 |
p. 1398-1407
10 p.
|
artikel
|
| 23 |
Impact of transparent conductive oxide on the admittance of thin film solar cells
|
Principato, F.
|
|
2010
|
54 |
11 |
p. 1284-1290
7 p.
|
artikel
|
| 24 |
Improving the cell characteristics using arch-active profile in NAND flash memory having 60nm design-rule
|
Kang, Daewoong
|
|
2010
|
54 |
11 |
p. 1263-1268
6 p.
|
artikel
|
| 25 |
Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films
|
Kar, J.P.
|
|
2010
|
54 |
11 |
p. 1447-1450
4 p.
|
artikel
|
| 26 |
Infrared light emitting device with two color emission
|
Das, Naresh C.
|
|
2010
|
54 |
11 |
p. 1381-1383
3 p.
|
artikel
|
| 27 |
Mechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistors
|
Wang, M.C.
|
|
2010
|
54 |
11 |
p. 1485-1487
3 p.
|
artikel
|
| 28 |
Modeling local electrical fluctuations in 45nm heavily pocket-implanted bulk MOSFET
|
Mezzomo, Cecilia M.
|
|
2010
|
54 |
11 |
p. 1359-1366
8 p.
|
artikel
|
| 29 |
Multiple gate NVM cells with improved Fowler–Nordheim tunneling program and erase performances
|
Gerardi, C.
|
|
2010
|
54 |
11 |
p. 1319-1325
7 p.
|
artikel
|
| 30 |
On the possibility of improving silicon solar cell efficiency through impurity photovoltaic effect and compensation
|
Pavel, Akeed A.
|
|
2010
|
54 |
11 |
p. 1278-1283
6 p.
|
artikel
|
| 31 |
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
|
Storm, D.F.
|
|
2010
|
54 |
11 |
p. 1470-1473
4 p.
|
artikel
|
| 32 |
Reconfigurable Special Test Circuit of physics-based IGBT models parameter extraction
|
Rodríguez, Marco A.
|
|
2010
|
54 |
11 |
p. 1246-1256
11 p.
|
artikel
|
| 33 |
Retention modeling of nanocrystalline flash memories: A Monte Carlo approach
|
Ghosh, Bahniman
|
|
2010
|
54 |
11 |
p. 1295-1299
5 p.
|
artikel
|
| 34 |
Scaling projections for Sb-based p-channel FETs
|
Ancona, M.G.
|
|
2010
|
54 |
11 |
p. 1349-1358
10 p.
|
artikel
|
| 35 |
Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation
|
Yang, Peizhen
|
|
2010
|
54 |
11 |
p. 1304-1311
8 p.
|
artikel
|
| 36 |
Self-consistent 1-D Schrödinger–Poisson solver for III–V heterostructures accounting for conduction band non-parabolicity
|
Wang, Lingquan
|
|
2010
|
54 |
11 |
p. 1257-1262
6 p.
|
artikel
|
| 37 |
Sensitivity analysis of magnetic field sensors utilizing spin-dependent recombination in silicon diodes
|
Jander, Albrecht
|
|
2010
|
54 |
11 |
p. 1479-1484
6 p.
|
artikel
|
| 38 |
Solvent dependent behaviour of poly(9-vinylcarbazole)-based polymer light emitting diodes
|
Alonso, J.L.
|
|
2010
|
54 |
11 |
p. 1269-1272
4 p.
|
artikel
|
| 39 |
Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors
|
Arulkumaran, S.
|
|
2010
|
54 |
11 |
p. 1430-1433
4 p.
|
artikel
|
| 40 |
The effect of photodiode shape on charge transfer in CMOS image sensors
|
Shin, Bhumjae
|
|
2010
|
54 |
11 |
p. 1416-1420
5 p.
|
artikel
|
| 41 |
Turn-on voltage engineering and enhancement mode operation of AlGaN/GaN high electron mobility transistor using multiple heterointerfaces
|
Tripathi, N.
|
|
2010
|
54 |
11 |
p. 1291-1294
4 p.
|
artikel
|
| 42 |
Unified large and small signal non-quasi-static model for long channel symmetric DG MOSFET
|
Sarkar, Sudipta
|
|
2010
|
54 |
11 |
p. 1421-1429
9 p.
|
artikel
|
| 43 |
Variable temperature characterization of low-dimensional effects in tri-gate SOI MOSFETs
|
Barrett, C.
|
|
2010
|
54 |
11 |
p. 1273-1277
5 p.
|
artikel
|
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