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                             35 results found
no title author magazine year volume issue page(s) type
1 A current model for FOI FinFETs with back-gate bias modulation Liu, F.Y.
185 C p.
 article
2 Analog characteristics of n-type vertically stacked nanowires Mariniello, Genaro
185 C p.
 article
3 A physics-based compact model of phase change for the design of cross-point storage-class memories Kim, Donguk
185 C p.
 article
4 A simple, robust, and accurate compact model for a wide variety of complementary resistive switching devices Saludes-Tapia, M.
185 C p.
 article
5 A simple test structure for the electrical characterization of front and back channels for advanced SOI technology development Alepidis, M.
185 C p.
 article
6 Assessment of 2D-FET Based Digital and Analog Circuits on Paper Vatalaro, Massimo
185 C p.
 article
7 Characterization of the defect density states in MoOx for c-Si solar cell applications Scirè, D.
185 C p.
 article
8 Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs Shafizade, Danial
185 C p.
 article
9 Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications Gupta, Sumreti
185 C p.
 article
10 Crystalline insulators for scalable 2D nanoelectronics Illarionov, Y.Y.
185 C p.
 article
11 Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor Bae, Hagyoul
185 C p.
 article
12 Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology Galy, Ph.
185 C p.
 article
13 Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C Agopian, P.G.D.
185 C p.
 article
14 Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides Celano, U.
185 C p.
 article
15 High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications Khosla, Robin
185 C p.
 article
16 III-V-on-Si transistor technologies: Performance boosters and integration Caimi, D.
185 C p.
 article
17 Improved interface characteristics of Mo/4H-SiC schottky contact Chen, Ke-han
185 C p.
 article
18 Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures Ribeiro, Thales Augusto
185 C p.
 article
19 Influence of variability on the performance of HfO2 memristor-based convolutional neural networks Romero-Zaliz, R.
185 C p.
 article
20 On the interpretation of MOS impedance data in both series and parallel circuit topologies Caruso, E.
185 C p.
 article
21 Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation Tamura, Atsushi
185 C p.
 article
22 Optimization of a nanoribbon charge-based biosensor using gateless BESOI pMOSFET structure Sasaki, K.R.A.
185 C p.
 article
23 Revisited parasitic bipolar effect in FDSOI MOSFETs: Mechanism, gain extraction and circuit applications Wang, G.Q.
185 C p.
 article
24 Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas Tekin, S.B.
185 C p.
 article
25 Single-poly floating-gate memory cell options for analog neural networks Paliy, Maksym
185 C p.
 article
26 SPICE modeling of cycle-to-cycle variability in RRAM devices Salvador, E.
185 C p.
 article
27 Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions Diaz-Fortuny, Javier
185 C p.
 article
28 Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices Guitarra, S.
185 C p.
 article
29 Structural properties of Ge-Sb-Te alloys Cinkaya, Hatun
185 C p.
 article
30 TCAD modeling of bias temperature instabilities in SiC MOSFETs Carangelo, G.
185 C p.
 article
31 Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current Cui, Peng
185 C p.
 article
32 Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors Costa, Fernando J.
185 C p.
 article
33 Two-pulse switching scheme and reinforcement learning for energy efficient SOT-MRAM simulations de Orio, R.L.
185 C p.
 article
34 Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation Magnone, P.
185 C p.
 article
35 Unified RTN and BTI statistical compact modeling from a defect-centric perspective Pedreira, G.
185 C p.
 article
                             35 results found
 
 Koninklijke Bibliotheek - National Library of the Netherlands