| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A current model for FOI FinFETs with back-gate bias modulation
|
Liu, F.Y.
|
|
|
185 |
C |
p.
|
artikel
|
| 2 |
Analog characteristics of n-type vertically stacked nanowires
|
Mariniello, Genaro
|
|
|
185 |
C |
p.
|
artikel
|
| 3 |
A physics-based compact model of phase change for the design of cross-point storage-class memories
|
Kim, Donguk
|
|
|
185 |
C |
p.
|
artikel
|
| 4 |
A simple, robust, and accurate compact model for a wide variety of complementary resistive switching devices
|
Saludes-Tapia, M.
|
|
|
185 |
C |
p.
|
artikel
|
| 5 |
A simple test structure for the electrical characterization of front and back channels for advanced SOI technology development
|
Alepidis, M.
|
|
|
185 |
C |
p.
|
artikel
|
| 6 |
Assessment of 2D-FET Based Digital and Analog Circuits on Paper
|
Vatalaro, Massimo
|
|
|
185 |
C |
p.
|
artikel
|
| 7 |
Characterization of the defect density states in MoOx for c-Si solar cell applications
|
Scirè, D.
|
|
|
185 |
C |
p.
|
artikel
|
| 8 |
Charge-based modeling of ultra narrow junctionless cylindrical nanowire FETs
|
Shafizade, Danial
|
|
|
185 |
C |
p.
|
artikel
|
| 9 |
Cryogenic temperature DC-IV measurements and compact modeling of n-channel bulk FinFETs with 3–4 nm wide fins and 20 nm gate length for quantum computing applications
|
Gupta, Sumreti
|
|
|
185 |
C |
p.
|
artikel
|
| 10 |
Crystalline insulators for scalable 2D nanoelectronics
|
Illarionov, Y.Y.
|
|
|
185 |
C |
p.
|
artikel
|
| 11 |
Current annealing to improve drain output performance of β-Ga2O3 field-effect transistor
|
Bae, Hagyoul
|
|
|
185 |
C |
p.
|
artikel
|
| 12 |
Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology
|
Galy, Ph.
|
|
|
185 |
C |
p.
|
artikel
|
| 13 |
Gate dielectric material influence on DC behavior of MO(I)SHEMT devices operating up to 150 °C
|
Agopian, P.G.D.
|
|
|
185 |
C |
p.
|
artikel
|
| 14 |
Harnessing charge injection in Kelvin probe force microscopy for the evaluation of oxides
|
Celano, U.
|
|
|
185 |
C |
p.
|
artikel
|
| 15 |
High-quality remote plasma enhanced atomic layer deposition of aluminum oxide thin films for nanoelectronics applications
|
Khosla, Robin
|
|
|
185 |
C |
p.
|
artikel
|
| 16 |
III-V-on-Si transistor technologies: Performance boosters and integration
|
Caimi, D.
|
|
|
185 |
C |
p.
|
artikel
|
| 17 |
Improved interface characteristics of Mo/4H-SiC schottky contact
|
Chen, Ke-han
|
|
|
185 |
C |
p.
|
artikel
|
| 18 |
Influence of fin width variation on the electrical characteristics of n-type junctionless nanowire transistors at high temperatures
|
Ribeiro, Thales Augusto
|
|
|
185 |
C |
p.
|
artikel
|
| 19 |
Influence of variability on the performance of HfO2 memristor-based convolutional neural networks
|
Romero-Zaliz, R.
|
|
|
185 |
C |
p.
|
artikel
|
| 20 |
On the interpretation of MOS impedance data in both series and parallel circuit topologies
|
Caruso, E.
|
|
|
185 |
C |
p.
|
artikel
|
| 21 |
Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation
|
Tamura, Atsushi
|
|
|
185 |
C |
p.
|
artikel
|
| 22 |
Optimization of a nanoribbon charge-based biosensor using gateless BESOI pMOSFET structure
|
Sasaki, K.R.A.
|
|
|
185 |
C |
p.
|
artikel
|
| 23 |
Revisited parasitic bipolar effect in FDSOI MOSFETs: Mechanism, gain extraction and circuit applications
|
Wang, G.Q.
|
|
|
185 |
C |
p.
|
artikel
|
| 24 |
Single and triple insulator Metal-Insulator-Metal diodes for infrared rectennas
|
Tekin, S.B.
|
|
|
185 |
C |
p.
|
artikel
|
| 25 |
Single-poly floating-gate memory cell options for analog neural networks
|
Paliy, Maksym
|
|
|
185 |
C |
p.
|
artikel
|
| 26 |
SPICE modeling of cycle-to-cycle variability in RRAM devices
|
Salvador, E.
|
|
|
185 |
C |
p.
|
artikel
|
| 27 |
Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions
|
Diaz-Fortuny, Javier
|
|
|
185 |
C |
p.
|
artikel
|
| 28 |
Stochastic based compact model to predict highly variable electrical characteristics of organic CBRAM devices
|
Guitarra, S.
|
|
|
185 |
C |
p.
|
artikel
|
| 29 |
Structural properties of Ge-Sb-Te alloys
|
Cinkaya, Hatun
|
|
|
185 |
C |
p.
|
artikel
|
| 30 |
TCAD modeling of bias temperature instabilities in SiC MOSFETs
|
Carangelo, G.
|
|
|
185 |
C |
p.
|
artikel
|
| 31 |
Technology of sub-100 nm InAlN/GaN HEMTs on silicon with suppressed leakage current
|
Cui, Peng
|
|
|
185 |
C |
p.
|
artikel
|
| 32 |
Thermal cross-coupling effects in side-by-side UTBB-FDSOI transistors
|
Costa, Fernando J.
|
|
|
185 |
C |
p.
|
artikel
|
| 33 |
Two-pulse switching scheme and reinforcement learning for energy efficient SOT-MRAM simulations
|
de Orio, R.L.
|
|
|
185 |
C |
p.
|
artikel
|
| 34 |
Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation
|
Magnone, P.
|
|
|
185 |
C |
p.
|
artikel
|
| 35 |
Unified RTN and BTI statistical compact modeling from a defect-centric perspective
|
Pedreira, G.
|
|
|
185 |
C |
p.
|
artikel
|
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