| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme
|
Kim, Dong Young
|
|
2018
|
140 |
C |
p. 8-11
|
artikel
|
| 2 |
Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM
|
Seo, Youngsoo
|
|
2018
|
140 |
C |
p. 69-73
|
artikel
|
| 3 |
Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET
|
Ko, Hyungwoo
|
|
2018
|
140 |
C |
p. 64-68
|
artikel
|
| 4 |
Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability
|
Ko, Kyul
|
|
2018
|
140 |
C |
p. 74-79
|
artikel
|
| 5 |
Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics
|
Kyoung, Sinsu
|
|
2018
|
140 |
C |
p. 23-28
|
artikel
|
| 6 |
Editorial Board
|
|
|
2018
|
140 |
C |
p. ii
|
artikel
|
| 7 |
Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors
|
Jang, Jungkyu
|
|
2018
|
140 |
C |
p. 109-114
|
artikel
|
| 8 |
Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications
|
Jang, Jun Tae
|
|
2018
|
140 |
C |
p. 139-143
|
artikel
|
| 9 |
Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices
|
Jang, Jun Tae
|
|
2018
|
140 |
C |
p. 115-121
|
artikel
|
| 10 |
GIDL analysis of the process variation effect in gate-all-around nanowire FET
|
Kim, Shinkeun
|
|
2018
|
140 |
C |
p. 59-63
|
artikel
|
| 11 |
Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device
|
Kim, Tae-Hyeon
|
|
2018
|
140 |
C |
p. 51-54
|
artikel
|
| 12 |
High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer
|
Lim, Jae-Gab
|
|
2018
|
140 |
C |
p. 134-138
|
artikel
|
| 13 |
Integrated neuron circuit for implementing neuromorphic system with synaptic device
|
Lee, Jeong-Jun
|
|
2018
|
140 |
C |
p. 34-40
|
artikel
|
| 14 |
Investigation of silicide-induced-dopant-activation for steep tunnel junction in tunnel field effect transistor (TFET)
|
Kim, Sihyun
|
|
2018
|
140 |
C |
p. 41-45
|
artikel
|
| 15 |
Lab-on-a-chip based total-phosphorus analysis device utilizing a photocatalytic reaction
|
Jung, Dong Geon
|
|
2018
|
140 |
C |
p. 100-108
|
artikel
|
| 16 |
Multi-layer WSe2 field effect transistor with improved carrier-injection contact by using oxygen plasma treatment
|
Kang, Won-Mook
|
|
2018
|
140 |
C |
p. 2-7
|
artikel
|
| 17 |
New modeling method for the dielectric relaxation of a DRAM cell capacitor
|
Choi, Sujin
|
|
2018
|
140 |
C |
p. 29-33
|
artikel
|
| 18 |
Preface
|
Lee, Jung-Hee
|
|
2018
|
140 |
C |
p. 1
|
artikel
|
| 19 |
Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation
|
Kim, Do-Bin
|
|
2018
|
140 |
C |
p. 46-50
|
artikel
|
| 20 |
Read margin analysis of crossbar arrays using the cell-variability-aware simulation method
|
Sun, Wookyung
|
|
2018
|
140 |
C |
p. 55-58
|
artikel
|
| 21 |
Resistive switching characteristics of solution-processed Al–Zn–Sn–O films annealed by microwave irradiation
|
Kim, Tae-Wan
|
|
2018
|
140 |
C |
p. 122-128
|
artikel
|
| 22 |
Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications
|
Baek, Il-Jin
|
|
2018
|
140 |
C |
p. 129-133
|
artikel
|
| 23 |
Sensing properties of separative paper-based extended-gate ion-sensitive field-effect transistor for cost effective pH sensor applications
|
Cho, Won-Ju
|
|
2018
|
140 |
C |
p. 96-99
|
artikel
|
| 24 |
Systematic analysis of oxide trap distribution of 4H-SiC DMOSFETs using TSCIS and its correlation with BTI and SILC behavior
|
Baek, Sangwon
|
|
2018
|
140 |
C |
p. 18-22
|
artikel
|
| 25 |
The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress
|
Rhee, Jihyun
|
|
2018
|
140 |
C |
p. 90-95
|
artikel
|
| 26 |
TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing
|
Shan, Fei
|
|
2018
|
140 |
C |
p. 86-89
|
artikel
|
| 27 |
Ultra-low rate dry etching conditions for fabricating normally-off field effect transistors on AlGaN/GaN heterostructures
|
Kim, Zin-Sig
|
|
2018
|
140 |
C |
p. 12-17
|
artikel
|
| 28 |
Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors
|
Jung, Haesun
|
|
2018
|
140 |
C |
p. 80-85
|
artikel
|
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