Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications
Titel:
Effect of oxygen content of the LaAlO3 layer on the synaptic behavior of Pt/LaAlO3/Nb-doped SrTiO3 memristors for neuromorphic applications
Auteur:
Jang, Jun Tae Ko, Daehyun Ahn, Geumho Yu, Hye Ri Jung, Haesun Kim, Yeon Soo Yoon, Chansoo Lee, Sangik Park, Bae Ho Choi, Sung-Jin Kim, Dong Myong Kim, Dae Hwan