| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A comparative mismatch study of the 20nm Gate-Last and 28nm Gate-First bulk CMOS technologies
|
Rahhal, Lama
|
|
2015
|
108 |
C |
p. 53-60
8 p.
|
artikel
|
| 2 |
Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs
|
Koyama, M.
|
|
2015
|
108 |
C |
p. 36-41
6 p.
|
artikel
|
| 3 |
Capacitance estimation for InAs Tunnel FETs by means of full-quantum k · p simulation
|
Gnani, E.
|
|
2015
|
108 |
C |
p. 104-109
6 p.
|
artikel
|
| 4 |
Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%
|
Luong, G.V.
|
|
2015
|
108 |
C |
p. 19-23
5 p.
|
artikel
|
| 5 |
Editorial Board
|
|
|
2015
|
108 |
C |
p. IFC-
1 p.
|
artikel
|
| 6 |
Editorial Selected papers from the 15th Ultimate Integration on Silicon (ULIS) conference
|
Östling, Mikael
|
|
2015
|
108 |
C |
p. 1-
1 p.
|
artikel
|
| 7 |
Electrical properties and strain distribution of Ge suspended structures
|
Shah, V.A.
|
|
2015
|
108 |
C |
p. 13-18
6 p.
|
artikel
|
| 8 |
Fabrication and properties of GeSi and SiON layers for above-IC integrated optics
|
Schmitz, Jurriaan
|
|
2015
|
108 |
C |
p. 8-12
5 p.
|
artikel
|
| 9 |
Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity
|
Richter, S.
|
|
2015
|
108 |
C |
p. 97-103
7 p.
|
artikel
|
| 10 |
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs
|
Tallarico, Andrea Natale
|
|
2015
|
108 |
C |
p. 42-46
5 p.
|
artikel
|
| 11 |
Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop
|
Windbacher, Thomas
|
|
2015
|
108 |
C |
p. 2-7
6 p.
|
artikel
|
| 12 |
Interface and strain effects on the fabrication of suspended CVD graphene devices
|
Aydin, O.I.
|
|
2015
|
108 |
C |
p. 75-83
9 p.
|
artikel
|
| 13 |
Large scale integration of graphene transistors for potential applications in the back end of the line
|
Smith, A.D.
|
|
2015
|
108 |
C |
p. 61-66
6 p.
|
artikel
|
| 14 |
Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions
|
Shin, Minju
|
|
2015
|
108 |
C |
p. 30-35
6 p.
|
artikel
|
| 15 |
On the modeling of Coulomb scattering in p-MOSFETs with hafnium based metal gate stacks
|
Kuligk, A.
|
|
2015
|
108 |
C |
p. 84-89
6 p.
|
artikel
|
| 16 |
The impact of interface states on the mobility and drive current of In 0.53 Ga 0.47 As semiconductor n-MOSFETs
|
Osgnach, Patrik
|
|
2015
|
108 |
C |
p. 90-96
7 p.
|
artikel
|
| 17 |
Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs
|
Dentoni Litta, E.
|
|
2015
|
108 |
C |
p. 24-29
6 p.
|
artikel
|
| 18 |
Universal analytic model for tunnel FET circuit simulation
|
Lu, Hao
|
|
2015
|
108 |
C |
p. 110-117
8 p.
|
artikel
|
| 19 |
Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons
|
Poljak, M.
|
|
2015
|
108 |
C |
p. 67-74
8 p.
|
artikel
|
| 20 |
Wide frequency band assessment of 28nm FDSOI technology platform for analogue and RF applications
|
Makovejev, S.
|
|
2015
|
108 |
C |
p. 47-52
6 p.
|
artikel
|
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