nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Calculated size dependence of ferroelectric properties in PbZrO3-PbTiO3 system
|
Yamamoto, Takashi |
|
1996 |
12 |
2-4 |
p. 161-166 |
artikel |
2 |
Effects of oxidants on the deposition and dielectric properties of the SrTiO3 thin films prepared by liquid source metal-organic chemical vapor deposition (MOCVD)
|
Hwang, Cheol Seong |
|
1996 |
12 |
2-4 |
p. 199-213 |
artikel |
3 |
Electrical properties of paraelectric PLT(28) thin films deposited by dc magnetron sputtering
|
Kim, H. H. |
|
1996 |
12 |
2-4 |
p. 241-249 |
artikel |
4 |
Growth and microstructures of sputtered ferroelectric PbTiO3 thin films
|
Wasa, Kiyotaka |
|
1996 |
12 |
2-4 |
p. 93-103 |
artikel |
5 |
Guest editorial
|
Scott, James F. |
|
1996 |
12 |
2-4 |
p. 7-8 |
artikel |
6 |
High-deposition-rate growth of PZT thin films by reactive electron beam coevaporation using Ti/Zr alloy
|
Mochizuki, Shoichi |
|
1996 |
12 |
2-4 |
p. 125-130 |
artikel |
7 |
Investigation of ferroelectric domains and structural twins in barium titanate crystal
|
Park, B. M. |
|
1996 |
12 |
2-4 |
p. 275-284 |
artikel |
8 |
Laser ablation preparation and property of bismuth-layer-structured SrBi2Ta2Ta2O9 and Bi4Ti3O12 ferroelectric thin films
|
Okuyama, M. |
|
1996 |
12 |
2-4 |
p. 225-232 |
artikel |
9 |
Low-temperature fabrication (450°C) and evaluation of Pb(Zr, Ti)O3 thin films by reactive sputtering using (ZrTi PbO) target
|
Zhang, Weixiao |
|
1996 |
12 |
2-4 |
p. 151-160 |
artikel |
10 |
MOCVD of Pb(ZrxTi1-x)O3 thin films on MgTiO3/Si substrates and their electrical properties
|
Lee, Choon-Ho |
|
1996 |
12 |
2-4 |
p. 115-123 |
artikel |
11 |
Models for the frequency dependence of coercive field and the size dependence of remanent polarization in ferroelectric thin films
|
Scott, J. F. |
|
1996 |
12 |
2-4 |
p. 71-81 |
artikel |
12 |
(111)-Oriented BaTiO3 thin films hydrothermally formed on TiO2/Si substrate
|
Xu, W-Ping |
|
1996 |
12 |
2-4 |
p. 233-239 |
artikel |
13 |
Phase formations and ferroelectric properties of PLT thin films by MOCVD
|
Lee, Seaung-Suk |
|
1996 |
12 |
2-4 |
p. 83-92 |
artikel |
14 |
Preparation and properties of Lanthanum lead zirconate titanate thin films by hydrothermal method
|
Kawano, Takafumi |
|
1996 |
12 |
2-4 |
p. 263-273 |
artikel |
15 |
Preparation of Bi4Ti3O12 thin films by electron cyclotron resonance sputtering
|
Maiwa, Hiroshi |
|
1996 |
12 |
2-4 |
p. 215-223 |
artikel |
16 |
Preparation of BST thin films on Pt electrode on Si wafer with down-flow LSMCVD reactor
|
Chung, Hyun Jin |
|
1996 |
12 |
2-4 |
p. 185-197 |
artikel |
17 |
Preparation of Zr-rich PZT and La-doped PbTiO3 thin films by RF magnetron sputtering and their properties for pyroelectric applications
|
Wang, Wensheng |
|
1996 |
12 |
2-4 |
p. 251-261 |
artikel |
18 |
PZT capacitor with Ir/IrO2/Ir electrode fabricated by RTA
|
Matsuura, Katsuyoshi |
|
1996 |
12 |
2-4 |
p. 139-149 |
artikel |
19 |
Raman, X-ray and electrical properties of MOD PZT/PLZT thin films
|
Zhu, W. |
|
1996 |
12 |
2-4 |
p. 167-175 |
artikel |
20 |
Recoil Spectrometry and RBS studies of strontium bismuth tantalate films on Pt/Ti electrodes
|
Stannard, W. B. |
|
1996 |
12 |
2-4 |
p. 177-184 |
artikel |
21 |
Reflection and refraction of light at the boundaries between ferroelectric and antiferroelectric phases in chiral smectic liquid crystals
|
Ogawa, Shinji |
|
1996 |
12 |
2-4 |
p. 285-291 |
artikel |
22 |
Sol-gel PZT thin films on nickel alloy electrodes
|
Ogawa, Toshio |
|
1996 |
12 |
2-4 |
p. 131-138 |
artikel |
23 |
Ultra-thin lead titanate films prepared by tripole magnetron sputtering
|
Karasawa, Junichi |
|
1996 |
12 |
2-4 |
p. 105-114 |
artikel |