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| Titel: |
Preparation of Bi4Ti3O12 thin films by electron cyclotron resonance sputtering |
| Auteur: |
Maiwa, Hiroshi Ichinose, Noboru |
| Verschenen in: |
Integrated ferroelectrics |
| Paginering: | Jaargang 12 (1996) nr. 2-4 pagina's 215-223 |
| Jaar: |
1996-10-01 |
| Inhoud: |
Ferroelectric Bi4Ti3O12 thin films were deposited on Pt-coated oxidized Si substrate by electron cyclotron resonance (ECR) sputtering using ceramic targets. Crystal structure and dielectric properties of the films were investigated as functions of sputtering conditions such as substrate temperature and sputtering gas. Using a target with excess Bi content compared to stoichiometric composition was required to compensate Bi re-evaporation from the substrate and to obtain a perovskite single phase at 600°C. (117)-oriented films exhibited ferroelectric hysteresis loops. The remanent polarization and coercive field of the films were 9.8 μC/cm2 and 180 kV/cm, respectively. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 15 van 23 gevonden artikelen
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