|
| << vorige | volgende >> |
Tijdschrift beschrijving
Alle jaargangen van het bijbehorende tijdschrift
Alle afleveringen van het bijbehorende jaargang
Alle artikelen van de bijbehorende aflevering
Details van artikel 6 van 23 gevonden artikelen
| Titel: |
High-deposition-rate growth of PZT thin films by reactive electron beam coevaporation using Ti/Zr alloy |
| Auteur: |
Mochizuki, Shoichi Mihara, Toshiyuki Ishida, Tadashi |
| Verschenen in: |
Integrated ferroelectrics |
| Paginering: | Jaargang 12 (1996) nr. 2-4 pagina's 125-130 |
| Jaar: |
1996-10-01 |
| Inhoud: |
Lead zirconate titanate (PZT) thin films were prepared by coevaporation of titanium/zirconium alloy and lead metal with an electron beam gun. Each of evaporation rates was independently controlled by each quartz crystal thickness monitor. Titanium/zirconium alloy was used because of simplicity of chemical composition control. To promote oxidation of the films, a mixed gas of oxygen and ozone (5%) was used. When evaporation rates of titanium/zirconium alloy and lead metal were controlled moderately, perovskite phase PZT film was obtained on 50 nm-thick-PbTiO3-film at substrate temperature of 550°C. When atomic ratio of titanium/zirconium alloy was 50:50, chemical composition of the films was Ti:Zr = 9:1. Deposition rate was greater than 50 nm/min, which was much larger than that by the sputtering method. |
| Uitgever: |
Taylor & Francis |
| Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
Details van artikel 6 van 23 gevonden artikelen
| << vorige | volgende >> |