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                             45 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acoustic properties of glycine phosphite crystals with an admixture of glycine phosphate Balashova, E. V.
2005
47 1 p. 183-190
artikel
2 Analysis of the gain and luminescence properties of Si/Si1−xGx: Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase Krasil’nikova, L. V.
2005
47 1 p. 93-97
artikel
3 A new allotropic form of carbon [C28]n based on fullerene C20 and cubic cluster C8 and Si and Ge analogs of this form: Computer simulation Chistyakov, A. L.
2005
47 1 p. 191-198
artikel
4 Anisotropic photonic crystals and microcavities based on mesoporous silicon Aktsipetrov, O. A.
2005
47 1 p. 156-158
artikel
5 Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy Kuznetsov, V. P.
2005
47 1 p. 102-105
artikel
6 Effective excitation cross section and lifetime of Er3+ ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy Remizov, D. Yu.
2005
47 1 p. 98-101
artikel
7 Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO2 Tetelbaum, D. I.
2005
47 1 p. 13-17
artikel
8 Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence Teterukov, S. A.
2005
47 1 p. 106-109
artikel
9 Effect of roughness of two-dimensional heterostructures on weak localization Germanenko, A. V.
2005
47 1 p. 133-140
artikel
10 Erbium excitation in a SiO2: Si-nc matrix under pulsed pumping Gusev, O. B.
2005
47 1 p. 110-112
artikel
11 Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation Timoshenko, V. Yu.
2005
47 1 p. 121-124
artikel
12 Erbium photoluminescence excitation spectroscopy in Si: Er epitaxial structures Andreev, B. A.
2005
47 1 p. 86-88
artikel
13 Er3+ ion electroluminescence of p+-Si/n-Si: Er/n+-Si diode structure under breakdown conditions Shmagin, V. B.
2005
47 1 p. 125-128
artikel
14 Excitation and de-excitation cross sections for light-emitting nanoclusters in rare earth-doped silicon Krivelevich, S. A.
2005
47 1 p. 9-12
artikel
15 Ferroelectric photonic crystals based on nanostructured lead zirconate titanate Sychev, F. Yu.
2005
47 1 p. 150-152
artikel
16 Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide Nikiforov, A. I.
2005
47 1 p. 67-70
artikel
17 Galvanomagnetic study of the quantum-well valence band of germanium in the Ge1−xSix/Ge/Ge1−xSix potential well Yakunin, M. V.
2005
47 1 p. 49-53
artikel
18 Ge/Si photodiodes and phototransistors with embedded arrays of germanium quantum dots for fiber-optic communication lines Yakimov, A. I.
2005
47 1 p. 34-37
artikel
19 Heteroepitaxy of erbium-doped silicon layers on sapphire substrates Shengurov, V. G.
2005
47 1 p. 89-92
artikel
20 Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots Cirlin, G. E.
2005
47 1 p. 58-62
artikel
21 Influence of a predeposited Si1−xGex layer on the growth of self-assembled SiGe/Si(001) islands Vostokov, N. V.
2005
47 1 p. 26-29
artikel
22 Influence of the germanium deposition rate on the growth and Photoluminescence of Ge(Si)/Si(001) self-assembled islands Vostokov, N. V.
2005
47 1 p. 38-41
artikel
23 Luminescence of phthalocyanine thin films Pakhomov, G. L.
2005
47 1 p. 170-173
artikel
24 Magnetization-induced third-harmonic generation in nanostructures and thin films Murzina, T. V.
2005
47 1 p. 153-155
artikel
25 MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence Sobolev, N. A.
2005
47 1 p. 113-116
artikel
26 MBE-grown Si: Er light-emitting structures: Effect of implantation and annealing on the luminescence properties Sobolev, N. A.
2005
47 1 p. 117-120
artikel
27 Methods for increasing the efficiency of nonlinear optical interactions in nanostructured semiconductors Kashkarov, P. K.
2005
47 1 p. 159-165
artikel
28 Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures Burbaev, T. M.
2005
47 1 p. 71-75
artikel
29 Negative photoconductivity of selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas in the middle-infrared range Antonov, A. V.
2005
47 1 p. 46-48
artikel
30 Novel polymer nanocomposites with giant dynamical optical nonlinearity Yurasova, I. V.
2005
47 1 p. 129-132
artikel
31 Oxygen-induced modification of dislocation luminescence centers in silicon Steinman, E. A.
2005
47 1 p. 5-8
artikel
32 Photoconductivity of Si/Ge/SiOx and Si/Ge/Si structures with germanium quantum dots Shegai, O. A.
2005
47 1 p. 30-33
artikel
33 Photoelectric properties and electroluminescence of p-i-n diodes based on GeSi/Si heterostructures with self-assembled nanoclusters Maksimov, G. A.
2005
47 1 p. 22-25
artikel
34 Photoluminescence of germanium quantum dots grown in silicon on a SiO2 submonolayer Shamirzaev, T. S.
2005
47 1 p. 82-85
artikel
35 Photoluminescence of nanocrystalline silicon formed by rare-gas ion implantation Ezhevskii, A. A.
2005
47 1 p. 18-21
artikel
36 Properties of magnesium silicate doped with chromium in porous silicon Demidov, E. S.
2005
47 1 p. 141-144
artikel
37 Raman spectroscopy and electroreflectance studies of self-assembled SiGe nanoislands grown at various temperatures Valakh, M. Ya.
2005
47 1 p. 54-57
artikel
38 Recombination at mixed-valence impurity centers in PbTe(Ga) epitaxial layers Akimov, B. A.
2005
47 1 p. 166-169
artikel
39 Shallow acceptor levels in Ge/GeSi heterostructures with quantum wells in a magnetic field Aleshkin, V. Ya.
2005
47 1 p. 76-81
artikel
40 Si-Ge-GaAs nanoheterostructures for photovoltaic cells Pchelyakov, O. P.
2005
47 1 p. 63-66
artikel
41 Si1−xGex/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure Vostokov, N. V.
2005
47 1 p. 42-45
artikel
42 Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon Batalov, R. I.
2005
47 1 p. 1-4
artikel
43 Temperature dependence of the photoluminescence of CdTe/ZnTe quantum-dot superlattices Bagaev, V. S.
2005
47 1 p. 174-177
artikel
44 Total resonant absorption of light by plasmons on the nanoporous surface of a metal Teperik, T. V.
2005
47 1 p. 178-182
artikel
45 Waveguide plasmon polaritons in metal-dielectric photonic crystal slabs Gippius, N. A.
2005
47 1 p. 145-149
artikel
                             45 gevonden resultaten
 
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