MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence
Titel:
MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence
Auteur:
Sobolev, N. A. Denisov, D. V. Emel’yanov, A. M. Shek, E. I. Ber, B. Ya. Kovarskii, A. P. Sakharov, V. I. Serenkov, I. T. Ustinov, V. M. Cirlin, G. E. Kotereva, T. V.