Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures
Titel:
Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures
Auteur:
Burbaev, T. M. Kurbatov, V. A. Rzaev, M. M. Pogosov, A. O. Sibel’din, N. N. Tsvetkov, V. A. Lichtenberger, H. Schäffler, F. Leitao, J. P. Sobolev, N. A. Carmo, M. C.