| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Acoustic properties of glycine phosphite crystals with an admixture of glycine phosphate
|
Balashova, E. V.
|
|
2005
|
47 |
1 |
p. 183-190
|
article
|
| 2 |
Analysis of the gain and luminescence properties of Si/Si1−xGx: Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase
|
Krasil’nikova, L. V.
|
|
2005
|
47 |
1 |
p. 93-97
|
article
|
| 3 |
A new allotropic form of carbon [C28]n based on fullerene C20 and cubic cluster C8 and Si and Ge analogs of this form: Computer simulation
|
Chistyakov, A. L.
|
|
2005
|
47 |
1 |
p. 191-198
|
article
|
| 4 |
Anisotropic photonic crystals and microcavities based on mesoporous silicon
|
Aktsipetrov, O. A.
|
|
2005
|
47 |
1 |
p. 156-158
|
article
|
| 5 |
Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy
|
Kuznetsov, V. P.
|
|
2005
|
47 |
1 |
p. 102-105
|
article
|
| 6 |
Effective excitation cross section and lifetime of Er3+ ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy
|
Remizov, D. Yu.
|
|
2005
|
47 |
1 |
p. 98-101
|
article
|
| 7 |
Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO2
|
Tetelbaum, D. I.
|
|
2005
|
47 |
1 |
p. 13-17
|
article
|
| 8 |
Effect of nonuniform permittivity of a solid-state matrix on the spectral width of erbium ion luminescence
|
Teterukov, S. A.
|
|
2005
|
47 |
1 |
p. 106-109
|
article
|
| 9 |
Effect of roughness of two-dimensional heterostructures on weak localization
|
Germanenko, A. V.
|
|
2005
|
47 |
1 |
p. 133-140
|
article
|
| 10 |
Erbium excitation in a SiO2: Si-nc matrix under pulsed pumping
|
Gusev, O. B.
|
|
2005
|
47 |
1 |
p. 110-112
|
article
|
| 11 |
Erbium ion luminescence of silicon nanocrystal layers in a silicon dioxide matrix measured under strong optical excitation
|
Timoshenko, V. Yu.
|
|
2005
|
47 |
1 |
p. 121-124
|
article
|
| 12 |
Erbium photoluminescence excitation spectroscopy in Si: Er epitaxial structures
|
Andreev, B. A.
|
|
2005
|
47 |
1 |
p. 86-88
|
article
|
| 13 |
Er3+ ion electroluminescence of p+-Si/n-Si: Er/n+-Si diode structure under breakdown conditions
|
Shmagin, V. B.
|
|
2005
|
47 |
1 |
p. 125-128
|
article
|
| 14 |
Excitation and de-excitation cross sections for light-emitting nanoclusters in rare earth-doped silicon
|
Krivelevich, S. A.
|
|
2005
|
47 |
1 |
p. 9-12
|
article
|
| 15 |
Ferroelectric photonic crystals based on nanostructured lead zirconate titanate
|
Sychev, F. Yu.
|
|
2005
|
47 |
1 |
p. 150-152
|
article
|
| 16 |
Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide
|
Nikiforov, A. I.
|
|
2005
|
47 |
1 |
p. 67-70
|
article
|
| 17 |
Galvanomagnetic study of the quantum-well valence band of germanium in the Ge1−xSix/Ge/Ge1−xSix potential well
|
Yakunin, M. V.
|
|
2005
|
47 |
1 |
p. 49-53
|
article
|
| 18 |
Ge/Si photodiodes and phototransistors with embedded arrays of germanium quantum dots for fiber-optic communication lines
|
Yakimov, A. I.
|
|
2005
|
47 |
1 |
p. 34-37
|
article
|
| 19 |
Heteroepitaxy of erbium-doped silicon layers on sapphire substrates
|
Shengurov, V. G.
|
|
2005
|
47 |
1 |
p. 89-92
|
article
|
| 20 |
Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots
|
Cirlin, G. E.
|
|
|
47 |
1 |
p. 58-62
|
article
|
| 21 |
Influence of antimony on the morphology and properties of an array of Ge/Si(100) quantum dots
|
Cirlin, G. E.
|
|
2005
|
47 |
1 |
p. 58-62
|
article
|
| 22 |
Influence of a predeposited Si1−xGex layer on the growth of self-assembled SiGe/Si(001) islands
|
Vostokov, N. V.
|
|
2005
|
47 |
1 |
p. 26-29
|
article
|
| 23 |
Influence of the germanium deposition rate on the growth and Photoluminescence of Ge(Si)/Si(001) self-assembled islands
|
Vostokov, N. V.
|
|
2005
|
47 |
1 |
p. 38-41
|
article
|
| 24 |
Luminescence of phthalocyanine thin films
|
Pakhomov, G. L.
|
|
2005
|
47 |
1 |
p. 170-173
|
article
|
| 25 |
Magnetization-induced third-harmonic generation in nanostructures and thin films
|
Murzina, T. V.
|
|
2005
|
47 |
1 |
p. 153-155
|
article
|
| 26 |
MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence
|
Sobolev, N. A.
|
|
2005
|
47 |
1 |
p. 113-116
|
article
|
| 27 |
MBE-grown Si: Er light-emitting structures: Effect of implantation and annealing on the luminescence properties
|
Sobolev, N. A.
|
|
2005
|
47 |
1 |
p. 117-120
|
article
|
| 28 |
Methods for increasing the efficiency of nonlinear optical interactions in nanostructured semiconductors
|
Kashkarov, P. K.
|
|
2005
|
47 |
1 |
p. 159-165
|
article
|
| 29 |
Morphological transformation of a germanium layer grown on a silicon surface by molecular-beam epitaxy at low temperatures
|
Burbaev, T. M.
|
|
2005
|
47 |
1 |
p. 71-75
|
article
|
| 30 |
Negative photoconductivity of selectively doped SiGe/Si: B heterostructures with a two-dimensional hole gas in the middle-infrared range
|
Antonov, A. V.
|
|
2005
|
47 |
1 |
p. 46-48
|
article
|
| 31 |
Novel polymer nanocomposites with giant dynamical optical nonlinearity
|
Yurasova, I. V.
|
|
2005
|
47 |
1 |
p. 129-132
|
article
|
| 32 |
Oxygen-induced modification of dislocation luminescence centers in silicon
|
Steinman, E. A.
|
|
2005
|
47 |
1 |
p. 5-8
|
article
|
| 33 |
Photoconductivity of Si/Ge/SiOx and Si/Ge/Si structures with germanium quantum dots
|
Shegai, O. A.
|
|
2005
|
47 |
1 |
p. 30-33
|
article
|
| 34 |
Photoelectric properties and electroluminescence of p-i-n diodes based on GeSi/Si heterostructures with self-assembled nanoclusters
|
Maksimov, G. A.
|
|
2005
|
47 |
1 |
p. 22-25
|
article
|
| 35 |
Photoluminescence of germanium quantum dots grown in silicon on a SiO2 submonolayer
|
Shamirzaev, T. S.
|
|
2005
|
47 |
1 |
p. 82-85
|
article
|
| 36 |
Photoluminescence of nanocrystalline silicon formed by rare-gas ion implantation
|
Ezhevskii, A. A.
|
|
2005
|
47 |
1 |
p. 18-21
|
article
|
| 37 |
Properties of magnesium silicate doped with chromium in porous silicon
|
Demidov, E. S.
|
|
2005
|
47 |
1 |
p. 141-144
|
article
|
| 38 |
Raman spectroscopy and electroreflectance studies of self-assembled SiGe nanoislands grown at various temperatures
|
Valakh, M. Ya.
|
|
2005
|
47 |
1 |
p. 54-57
|
article
|
| 39 |
Recombination at mixed-valence impurity centers in PbTe(Ga) epitaxial layers
|
Akimov, B. A.
|
|
2005
|
47 |
1 |
p. 166-169
|
article
|
| 40 |
Shallow acceptor levels in Ge/GeSi heterostructures with quantum wells in a magnetic field
|
Aleshkin, V. Ya.
|
|
2005
|
47 |
1 |
p. 76-81
|
article
|
| 41 |
Si-Ge-GaAs nanoheterostructures for photovoltaic cells
|
Pchelyakov, O. P.
|
|
2005
|
47 |
1 |
p. 63-66
|
article
|
| 42 |
Si1−xGex/Si(001) relaxed buffer layers grown by chemical vapor deposition at atmospheric pressure
|
Vostokov, N. V.
|
|
2005
|
47 |
1 |
p. 42-45
|
article
|
| 43 |
Structure, impurity composition, and photoluminescence of mechanically polished layers of single-crystal silicon
|
Batalov, R. I.
|
|
2005
|
47 |
1 |
p. 1-4
|
article
|
| 44 |
Temperature dependence of the photoluminescence of CdTe/ZnTe quantum-dot superlattices
|
Bagaev, V. S.
|
|
2005
|
47 |
1 |
p. 174-177
|
article
|
| 45 |
Total resonant absorption of light by plasmons on the nanoporous surface of a metal
|
Teperik, T. V.
|
|
2005
|
47 |
1 |
p. 178-182
|
article
|
| 46 |
Waveguide plasmon polaritons in metal-dielectric photonic crystal slabs
|
Gippius, N. A.
|
|
2005
|
47 |
1 |
p. 145-149
|
article
|
Journal description