| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A graphical peak analysis method for characterizing impurities in SiC, GaN and diamond from temperature-dependent majority-carrier concentration
|
Matsuura, Hideharu
|
|
2007
|
19 |
8-9 |
p. 720-726
|
artikel
|
| 2 |
A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition
|
Zvanut, M. E.
|
|
2007
|
19 |
8-9 |
p. 678-681
|
artikel
|
| 3 |
Buffer-trapping effects on current slump in AlGaN/GaN HEMTs
|
Nakajima, Atsushi
|
|
2007
|
19 |
8-9 |
p. 735-739
|
artikel
|
| 4 |
Characterization of deep centers in semi-insulating SiC and HgI2: Application of discharge current transient spectroscopy
|
Matsuura, Hideharu
|
|
2007
|
19 |
8-9 |
p. 810-814
|
artikel
|
| 5 |
Cobalt substituted ZnO thin films: a potential candidate for spintronics
|
Bhatti, Kanwal Preet
|
|
2007
|
19 |
8-9 |
p. 849-854
|
artikel
|
| 6 |
Cooperative Jahn–Teller transition in Li[LixMn2–x]O4: a muon-spin rotaion/relaxation (μSR) view
|
Sugiyama, Jun
|
|
2008
|
19 |
8-9 |
p. 875-882
|
artikel
|
| 7 |
Deep UV light emitting diodes grown by gas source molecular beam epitaxy
|
Nikishin, Sergey
|
|
2007
|
19 |
8-9 |
p. 764-769
|
artikel
|
| 8 |
Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering
|
Ahn, C. H.
|
|
2007
|
19 |
8-9 |
p. 744-748
|
artikel
|
| 9 |
Depth profiles and concentration percentages of SiO2 and SiOx induced by ion bombardment of a silicon (100) target
|
Lee, Chin Shuang
|
|
2008
|
19 |
8-9 |
p. 898-901
|
artikel
|
| 10 |
Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWOx Schottky contacts
|
Buc, Dalibor
|
|
2007
|
19 |
8-9 |
p. 783-787
|
artikel
|
| 11 |
Electronic and magnetic properties of novel layered cobalt dioxides AxCoO2 with A = Li, Na, and K
|
Sugiyama, Jun
|
|
2008
|
19 |
8-9 |
p. 883-893
|
artikel
|
| 12 |
Growth and characteristics of ternary Zn1−xMgxO films using magnetron co-sputtering
|
Kang, Si Woo
|
|
2007
|
19 |
8-9 |
p. 755-759
|
artikel
|
| 13 |
Growth and characterization of III-N bulk crystals
|
Frazier, R. M.
|
|
2007
|
19 |
8-9 |
p. 845-848
|
artikel
|
| 14 |
Growth condition dependence of zinc oxide nanostructures on Si substrates in an electrochemical process
|
Cui, Jingbiao
|
|
2008
|
19 |
8-9 |
p. 908-914
|
artikel
|
| 15 |
High-k gate stack HfxTi1−xON/SiO2 for SiC MOS devices
|
Lin, L. M.
|
|
2008
|
19 |
8-9 |
p. 894-897
|
artikel
|
| 16 |
Independent control of InAs quantum dot density and size on AlxGa1–xAs surfaces
|
Andrews, Aaron Maxwell
|
|
2007
|
19 |
8-9 |
p. 714-719
|
artikel
|
| 17 |
InP based semiconductor structures for radiation detection
|
Procházková, Olga
|
|
2007
|
19 |
8-9 |
p. 770-775
|
artikel
|
| 18 |
Investigation of deep levels in InGaAs channels comprising thin layers of InAs
|
Dobbert, J.
|
|
2007
|
19 |
8-9 |
p. 797-800
|
artikel
|
| 19 |
Investigation of NiOx-based contacts on p-GaN
|
Liday, J.
|
|
2007
|
19 |
8-9 |
p. 855-862
|
artikel
|
| 20 |
Latest developments in GaN-based quantum devices for infrared optoelectronics
|
Monroy, Eva
|
|
2007
|
19 |
8-9 |
p. 821-827
|
artikel
|
| 21 |
Low temperature crystallization of amorphous silicon carbide thin films for p–n junction devices fabrication
|
Hossain, Maruf
|
|
2007
|
19 |
8-9 |
p. 801-804
|
artikel
|
| 22 |
Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element
|
Kunets, Vasyl P.
|
|
2007
|
19 |
8-9 |
p. 776-782
|
artikel
|
| 23 |
Microstructure and luminescence properties of Co-doped SnO2 nanoparticles synthesized by hydrothermal method
|
Fang, L. M.
|
|
2008
|
19 |
8-9 |
p. 868-874
|
artikel
|
| 24 |
Mn and other magnetic impurities in GaN and other III–V semiconductors – perspective for spintronic applications
|
Kaminska, Maria
|
|
2007
|
19 |
8-9 |
p. 828-834
|
artikel
|
| 25 |
Molecular beam epitaxy of semipolar AlN($$11\bar{2}2$$) and GaN($$11\bar{2}2$$) on m-sapphire
|
Lahourcade, Lise
|
|
2007
|
19 |
8-9 |
p. 805-809
|
artikel
|
| 26 |
Morphology control of 1D ZnO nanostructures grown by metal-organic chemical vapor deposition
|
Kim, Dong Chan
|
|
2007
|
19 |
8-9 |
p. 760-763
|
artikel
|
| 27 |
Negative magnetoresistance in SiC heteropolytype junctions
|
Lebedev, Alexander Alexandrovich
|
|
2007
|
19 |
8-9 |
p. 793-796
|
artikel
|
| 28 |
Nitrogen doping of SiC thin films deposited by RF magnetron sputtering
|
Fraga, Mariana Amorim
|
|
2007
|
19 |
8-9 |
p. 835-840
|
artikel
|
| 29 |
Optical and structural properties of SiC nanocrystals
|
Morales Rodriguez, M.
|
|
2007
|
19 |
8-9 |
p. 682-686
|
artikel
|
| 30 |
Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance
|
Chaldyshev, V. V.
|
|
2007
|
19 |
8-9 |
p. 699-703
|
artikel
|
| 31 |
Orientation and temperature dependence of the tensile behavior of GaN nanowires: an atomistic study
|
Wang, Zhiguo
|
|
2007
|
19 |
8-9 |
p. 863-867
|
artikel
|
| 32 |
Polarized Raman spectroscopy and X-ray diffuse scattering in InGaAs/GaAs(100) quantum-dot chains
|
Strelchuk, V. V.
|
|
2007
|
19 |
8-9 |
p. 692-698
|
artikel
|
| 33 |
Preface: 2007 Semiconducting and Insulating Materials Conference
|
Wang, Zhiming M.
|
|
2008
|
19 |
8-9 |
p. 677
|
artikel
|
| 34 |
Pulsed laser deposited ZnO films and their humidity sensing behavior
|
Dixit, Shobhna
|
|
2007
|
19 |
8-9 |
p. 788-792
|
artikel
|
| 35 |
Radiation effects in natural quartz crystals
|
Bahadur, Harish
|
|
2007
|
19 |
8-9 |
p. 709-713
|
artikel
|
| 36 |
Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy
|
Seghier, D.
|
|
2007
|
19 |
8-9 |
p. 687-691
|
artikel
|
| 37 |
Structural and electrical properties of thermally evaporated 1,4-Bis-(2-hydroxyethylamino)-9,10-anthraquinone films
|
Bedi, R. K.
|
|
2007
|
19 |
8-9 |
p. 841-844
|
artikel
|
| 38 |
Structural and magnetic properties of MnAs/GaAs ferromagnetic semiconductor nanocomposite material
|
Kwiatkowski, Adam
|
|
2007
|
19 |
8-9 |
p. 740-743
|
artikel
|
| 39 |
Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions
|
Liliental-Weber, Zuzanna
|
|
2007
|
19 |
8-9 |
p. 815-820
|
artikel
|
| 40 |
Temperature dependence of ZnO thin films grown on Si substrate
|
Kim, Y. Y.
|
|
2007
|
19 |
8-9 |
p. 749-754
|
artikel
|
| 41 |
The effects of Al doping on the optical constants of ZnO thin films prepared by spray pyrolysis method
|
Caglar, Mujdat
|
|
2007
|
19 |
8-9 |
p. 704-708
|
artikel
|
| 42 |
The recent advances of research on p-type ZnO thin film
|
Dai, L. P.
|
|
2007
|
19 |
8-9 |
p. 727-734
|
artikel
|
| 43 |
Tunneling currents through ultra thin HfO2/Al2O3/HfO2 triple layer gate dielectrics for advanced MIS devices
|
Tyagi, Hitender Kumar
|
|
2008
|
19 |
8-9 |
p. 902-907
|
artikel
|
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