| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A batch process to deposit amorphous metallic Mo–Si–N films
|
Kattelus, H.
|
|
2003
|
14 |
5-7 |
p. 427-430
|
artikel
|
| 2 |
A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
|
Dueñas, S.
|
|
2003
|
14 |
5-7 |
p. 375-378
|
artikel
|
| 3 |
AlGaN/GaN HEMTS: material, processing, and characterization
|
Calle, F.
|
|
2003
|
14 |
5-7 |
p. 271-277
|
artikel
|
| 4 |
Atomic layer deposition of HfO2 thin films and nanolayered HfO2–Al2O3–Nb2O5 dielectrics
|
Kukli, Kaupo
|
|
2003
|
14 |
5-7 |
p. 361-367
|
artikel
|
| 5 |
Capacitance and current–voltage simulation of EEPROM technology highly doped MOS structures
|
Croci, S.
|
|
2003
|
14 |
5-7 |
p. 311-314
|
artikel
|
| 6 |
Confined epitaxial growth by low-pressure chemical vapor deposition
|
Osman, K.
|
|
2003
|
14 |
5-7 |
p. 257-260
|
artikel
|
| 7 |
Copper nanoparticles within amorphous and crystalline dielectric matrices
|
Gurin, V. S.
|
|
2003
|
14 |
5-7 |
p. 333-336
|
artikel
|
| 8 |
Correlating integrated circuit process-induced strain and defects against device yield and process control monitoring data
|
Karilahti, M.
|
|
2003
|
14 |
5-7 |
p. 445-449
|
artikel
|
| 9 |
3D atomic imaging of SiGe system by X-ray fluorescence holography
|
Hayashi, K.
|
|
2003
|
14 |
5-7 |
p. 459-462
|
artikel
|
| 10 |
Editorial
|
|
|
2003
|
14 |
5-7 |
p. 5
|
artikel
|
| 11 |
Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen
|
Misiuk, A.
|
|
2003
|
14 |
5-7 |
p. 295-298
|
artikel
|
| 12 |
Effects of molecular shape on the photoluminescence of dyes embedded in a chiral polymer with a photonic band gap
|
Bjorknas, K.
|
|
2003
|
14 |
5-7 |
p. 397-401
|
artikel
|
| 13 |
Electrical and microstructural properties of Bi2−xSbxTe and Bi2−xSbxTe2 foils obtained by the ultrarapid quenching process
|
Kukharenka, E.
|
|
2003
|
14 |
5-7 |
p. 383-388
|
artikel
|
| 14 |
Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
|
Castán, H.
|
|
2003
|
14 |
5-7 |
p. 287-290
|
artikel
|
| 15 |
Formation kinetics and structure of self-assembled poly(3-alkylthiophene) films on gold surface
|
Matsuura, T.
|
|
2003
|
14 |
5-7 |
p. 353-356
|
artikel
|
| 16 |
Growth and magnetic properties of MnGe films for spintronic application
|
Pinto, N.
|
|
2003
|
14 |
5-7 |
p. 337-340
|
artikel
|
| 17 |
Growth of GaAs on polycrystalline silicon-on-insulator
|
Riikonen, J.
|
|
2003
|
14 |
5-7 |
p. 403-405
|
artikel
|
| 18 |
High-temperature strength of bulk single crystals of III-V nitrides
|
Yonenaga, I.
|
|
2003
|
14 |
5-7 |
p. 279-281
|
artikel
|
| 19 |
Influence of irradiation temperature on electron-irradiated STI Si diodes
|
Ohyama, H.
|
|
2003
|
14 |
5-7 |
p. 451-454
|
artikel
|
| 20 |
Infrared absorption of a-SiC : H as a function of the annealing temperature
|
Murri, R.
|
|
2003
|
14 |
5-7 |
p. 341-344
|
artikel
|
| 21 |
In(Ga)As quantum dots on Ge substrate
|
Knuuttila, L.
|
|
2003
|
14 |
5-7 |
p. 349-352
|
artikel
|
| 22 |
Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films
|
Nardes, A. M.
|
|
2003
|
14 |
5-7 |
p. 407-411
|
artikel
|
| 23 |
Low-temperature plasma-enhanced chemical vapor deposition of tungsten and tungsten nitride
|
Bain, M. F.
|
|
2003
|
14 |
5-7 |
p. 329-332
|
artikel
|
| 24 |
Micro-Raman investigations of the degree of relaxation in thin SiGe buffer layers with high Ge content
|
Perova, T. S.
|
|
2003
|
14 |
5-7 |
p. 441-444
|
artikel
|
| 25 |
Misfit dislocations in GaAsN/GaAs interface
|
Toivonen, J.
|
|
2003
|
14 |
5-7 |
p. 267-270
|
artikel
|
| 26 |
Nonradiative electron–hole recombination in ZnSSe epitaxial layers examined by piezoelectric photothermal spectroscopy
|
Yoshino, K.
|
|
2003
|
14 |
5-7 |
p. 421-425
|
artikel
|
| 27 |
Non-selective growth of SiGe heterojunction bipolar trasistor layers at 700 °C with dual control of n- and p-type dopant profiles
|
El Mubarek, H. A. W.
|
|
2003
|
14 |
5-7 |
p. 261-265
|
artikel
|
| 28 |
Optical waveguides on polysilicon-on-insulator
|
Säynätjoki, A.
|
|
2003
|
14 |
5-7 |
p. 417-420
|
artikel
|
| 29 |
Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots
|
Koskenvaara, H.
|
|
2003
|
14 |
5-7 |
p. 357-360
|
artikel
|
| 30 |
Photonic band gaps in 12-fold symmetric quasicrystals
|
Hiett, B. P.
|
|
2003
|
14 |
5-7 |
p. 413-416
|
artikel
|
| 31 |
Piezoelectric ZnO films by r.f. sputtering
|
Molarius, J.
|
|
2003
|
14 |
5-7 |
p. 431-435
|
artikel
|
| 32 |
Planar chiral meta-materials for photonic devices
|
Potts, A.
|
|
2003
|
14 |
5-7 |
p. 393-395
|
artikel
|
| 33 |
Polyaniline films deposited by anodic polymerization: Properties and applications to chemical sensing
|
Grigore, L.
|
|
2003
|
14 |
5-7 |
p. 389-392
|
artikel
|
| 34 |
Radiation damage induced in Si photodiodes by high-temperature neutron irradiation
|
Ohyama, H.
|
|
2003
|
14 |
5-7 |
p. 437-440
|
artikel
|
| 35 |
Rapid thermal annealing of Cu/WNx/Si structures
|
Lipsanen, A.
|
|
2003
|
14 |
5-7 |
p. 315-318
|
artikel
|
| 36 |
Realization of electroplating molds with thick positive SPR 220-7 photoresist
|
Kukharenka, E.
|
|
2003
|
14 |
5-7 |
p. 319-322
|
artikel
|
| 37 |
Relaxor ferroelectric thin-film heterostructures: Scaling of dielectric properties
|
Tyunina, M.
|
|
2003
|
14 |
5-7 |
p. 369-374
|
artikel
|
| 38 |
Self-assembled germanium islands grown on (0 0 1) silicon substrates by low-pressure chemical vapor deposition
|
Dilliway, G. D. M.
|
|
2003
|
14 |
5-7 |
p. 323-327
|
artikel
|
| 39 |
Spectroellipsometric studies of 0.9PbMg1/3Nb2/3O3-0.1PbTiO3 thin films
|
Tsang, W. S.
|
|
2003
|
14 |
5-7 |
p. 345-348
|
artikel
|
| 40 |
Stress characterization of device layers and the underlying Si1−xGex virtual substrate with high-resolution micro-Raman spectroscopy
|
Chen, W. M.
|
|
2003
|
14 |
5-7 |
p. 455-458
|
artikel
|
| 41 |
Structural and optical characterization of CuInS2 thin films grown by vacuum evaporation method
|
Akaki, Y.
|
|
2003
|
14 |
5-7 |
p. 291-294
|
artikel
|
| 42 |
Surface treatment for high-quality Al2O3 and HfO2 layers deposited on HF-dipped surface by atomic layer deposition
|
Damlencourt, J.-F.
|
|
2003
|
14 |
5-7 |
p. 379-382
|
artikel
|
| 43 |
Tilted-wing-induced stress distribution in epitaxial lateral overgrown GaN
|
Chen, W. M.
|
|
2003
|
14 |
5-7 |
p. 283-286
|
artikel
|
| 44 |
Transfer of thin Si layers by cold and thermal ion cutting
|
Henttinen, K.
|
|
2003
|
14 |
5-7 |
p. 299-303
|
artikel
|
| 45 |
Transformation of hydrogen trapped onto microbubbles into H platelet layer in SI
|
Usenko, A. Y.
|
|
2003
|
14 |
5-7 |
p. 305-309
|
artikel
|
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