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45 gevonden resultaten

nr	titel	auteur	tijdschrift	jaar	jaarg.	afl.	pagina('s)	type
1	A batch process to deposit amorphous metallic MoSiN films	H. Kattelus		2003	14	5	p. 427-430 4 p.	artikel
2	A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide	S. Dueñas		2003	14	5	p. 375-378 4 p.	artikel
3	AlGaN/GaN HEMTS: material, processing, and characterization	F. Calle		2003	14	5	p. 271-277 7 p.	artikel
4	Atomic layer deposition of HfO2 thin films and nanolayered HfO2Al2O3Nb2O5 dielectrics	Kaupo Kukli		2003	14	5	p. 361-367 7 p.	artikel
5	Capacitance and currentvoltage simulation of EEPROM technology highly doped MOS structures	S. Croci		2003	14	5	p. 311-314 4 p.	artikel
6	Confined epitaxial growth by low-pressure chemical vapor deposition	K. Osman		2003	14	5	p. 257-260 4 p.	artikel
7	Copper nanoparticles within amorphous and crystalline dielectric matrices	V. S. Gurin		2003	14	5	p. 333-336 4 p.	artikel
8	Correlating integrated circuit process-induced strain and defects against device yield and process control monitoring data	M. Karilahti		2003	14	5	p. 445-449 5 p.	artikel
9	3D atomic imaging of SiGe system by X-ray fluorescence holography	K. Hayashi		2003	14	5	p. 459-462 4 p.	artikel
10	Editorial			2003	14	5	p. 5-5 4 p.	artikel
11	Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen	A. Misiuk		2003	14	5	p. 295-298 4 p.	artikel
12	Effects of molecular shape on the photoluminescence of dyes embedded in a chiral polymer with a photonic band gap	K. Bjorknas		2003	14	5	p. 397-401 5 p.	artikel
13	Electrical and microstructural properties of Bi2−xSbxTe and Bi2−xSbxTe2 foils obtained by the ultrarapid quenching process	E. Kukharenka		2003	14	5	p. 383-388 6 p.	artikel
14	Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films	H. Castán		2003	14	5	p. 287-290 4 p.	artikel
15	Formation kinetics and structure of self-assembled poly(3-alkylthiophene) films on gold surface	T. Matsuura		2003	14	5	p. 353-356 4 p.	artikel
16	Growth and magnetic properties of MnGe films for spintronic application	N. Pinto		2003	14	5	p. 337-340 4 p.	artikel
17	Growth of GaAs on polycrystalline silicon-on-insulator	J. Riikonen		2003	14	5	p. 403-405 3 p.	artikel
18	High-temperature strength of bulk single crystals of III-V nitrides	I. Yonenaga		2003	14	5	p. 279-281 3 p.	artikel
19	Influence of irradiation temperature on electron-irradiated STI Si diodes	H. Ohyama		2003	14	5	p. 451-454 4 p.	artikel
20	Infrared absorption of a-SiC : H as a function of the annealing temperature	R. Murri		2003	14	5	p. 341-344 4 p.	artikel
21	In(Ga)As quantum dots on Ge substrate	L. Knuuttila		2003	14	5	p. 349-352 4 p.	artikel
22	Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films	A. M. Nardes		2003	14	5	p. 407-411 5 p.	artikel
23	Low-temperature plasma-enhanced chemical vapor deposition of tungsten and tungsten nitride	M. F. Bain		2003	14	5	p. 329-332 4 p.	artikel
24	Micro-Raman investigations of the degree of relaxation in thin SiGe buffer layers with high Ge content	T. S. Perova		2003	14	5	p. 441-444 4 p.	artikel
25	Misfit dislocations in GaAsN/GaAs interface	J. Toivonen		2003	14	5	p. 267-270 4 p.	artikel
26	Nonradiative electronhole recombination in ZnSSe epitaxial layers examined by piezoelectric photothermal spectroscopy	K. Yoshino		2003	14	5	p. 421-425 5 p.	artikel
27	Non-selective growth of SiGe heterojunction bipolar trasistor layers at 700 °C with dual control of n- and p-type dopant profiles	H. A. W. El Mubarek		2003	14	5	p. 261-265 5 p.	artikel
28	Optical waveguides on polysilicon-on-insulator	A. Säynätjoki		2003	14	5	p. 417-420 4 p.	artikel
29	Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots	H. Koskenvaara		2003	14	5	p. 357-360 4 p.	artikel
30	Photonic band gaps in 12-fold symmetric quasicrystals	B. P. Hiett		2003	14	5	p. 413-416 4 p.	artikel
31	Piezoelectric ZnO films by r.f. sputtering	J. Molarius		2003	14	5	p. 431-435 5 p.	artikel
32	Planar chiral meta-materials for photonic devices	A. Potts		2003	14	5	p. 393-395 3 p.	artikel
33	Polyaniline films deposited by anodic polymerization: Properties and applications to chemical sensing	L. Grigore		2003	14	5	p. 389-392 4 p.	artikel
34	Radiation damage induced in Si photodiodes by high-temperature neutron irradiation	H. Ohyama		2003	14	5	p. 437-440 4 p.	artikel
35	Rapid thermal annealing of Cu/WNx/Si structures	A. Lipsanen		2003	14	5	p. 315-318 4 p.	artikel
36	Realization of electroplating molds with thick positive SPR 220-7 photoresist	E. Kukharenka		2003	14	5	p. 319-322 4 p.	artikel
37	Relaxor ferroelectric thin-film heterostructures: Scaling of dielectric properties	M. Tyunina		2003	14	5	p. 369-374 6 p.	artikel
38	Self-assembled germanium islands grown on (0 0 1) silicon substrates by low-pressure chemical vapor deposition	G. D. M. Dilliway		2003	14	5	p. 323-327 5 p.	artikel
39	Spectroellipsometric studies of 0.9PbMg1/3Nb2/3O3-0.1PbTiO3 thin films	W. S. Tsang		2003	14	5	p. 345-348 4 p.	artikel
40	Stress characterization of device layers and the underlying Si1−xGex virtual substrate with high-resolution micro-Raman spectroscopy	W. M. Chen		2003	14	5	p. 455-458 4 p.	artikel
41	Structural and optical characterization of CuInS2 thin films grown by vacuum evaporation method	Y. Akaki		2003	14	5	p. 291-294 4 p.	artikel
42	Surface treatment for high-quality Al2O3 and HfO2 layers deposited on HF-dipped surface by atomic layer deposition	J.-F. Damlencourt		2003	14	5	p. 379-382 4 p.	artikel
43	Tilted-wing-induced stress distribution in epitaxial lateral overgrown GaN	W. M. Chen		2003	14	5	p. 283-286 4 p.	artikel
44	Transfer of thin Si layers by cold and thermal ion cutting	K. Henttinen		2003	14	5	p. 299-303 5 p.	artikel
45	Transformation of hydrogen trapped onto microbubbles into H platelet layer in SI	A. Y. Usenko		2003	14	5	p. 305-309 5 p.	artikel

45 gevonden resultaten

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