| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Active media for optical data processing in optoelectronic devices
|
Vāle, G.
|
|
1999
|
10 |
5-6 |
p. 451-454
|
artikel
|
| 2 |
Effects of strain rate and temperature on the stress–strain response of solder alloys
|
Plumbridge, W. J.
|
|
1999
|
10 |
5-6 |
p. 461-468
|
artikel
|
| 3 |
Electrical carrier activation in Zn+ implanted and low-power pulsed-laser annealed InP in nitrogen atmosphere
|
Pizzuto, C.
|
|
1999
|
10 |
5-6 |
p. 407-411
|
artikel
|
| 4 |
Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions
|
Quintanilla, L.
|
|
1999
|
10 |
5-6 |
p. 413-418
|
artikel
|
| 5 |
Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
|
Duen~as, S.
|
|
1999
|
10 |
5-6 |
p. 373-377
|
artikel
|
| 6 |
Electrical characterization of Si+ and Si+/P+ implanted N+P+In0.53Ga0.47As junctions
|
Blanco, M. N.
|
|
1999
|
10 |
5-6 |
p. 425-428
|
artikel
|
| 7 |
Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells
|
Dharmadasa, I. M.
|
|
1999
|
10 |
5-6 |
p. 441-445
|
artikel
|
| 8 |
Growth and mechanical properties of GeSi bulk crystals
|
Yonenaga, I.
|
|
1999
|
10 |
5-6 |
p. 329-333
|
artikel
|
| 9 |
High dielectric AlN/Al2O3 composite powder using a plasma spray approach for microelectronics application
|
Boey, F. Y. C.
|
|
1999
|
10 |
5-6 |
p. 455-459
|
artikel
|
| 10 |
Impact of high energy particle irradiation on the electrical performance of Si1−xGex epitaxial diodes
|
Ohyama, H.
|
|
1999
|
10 |
5-6 |
p. 335-337
|
artikel
|
| 11 |
Ion beam synthesis of compound nanoparticles in SiO2
|
Pe´rez-Rodri´guez, A.
|
|
1999
|
10 |
5-6 |
p. 385-391
|
artikel
|
| 12 |
Kinetic and electrical characterization of thin silicon oxide films obtained by electron cyclotron resonance plasma
|
Herna´ndez, M. J.
|
|
1999
|
10 |
5-6 |
p. 393-398
|
artikel
|
| 13 |
Low-dose SIMOX wafers for LSIs fabricated with internal-thermal-oxidation (ITOX) process: electrical characterization
|
Matsumura, A.
|
|
1999
|
10 |
5-6 |
p. 365-371
|
artikel
|
| 14 |
Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers
|
Hammadi, M.
|
|
1999
|
10 |
5-6 |
p. 399-402
|
artikel
|
| 15 |
Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy
|
Mcnally, P. J.
|
|
1999
|
10 |
5-6 |
p. 351-358
|
artikel
|
| 16 |
Non-equilibrium thermodynamic analysis on the behaviour of point defects in growing silicon crystals: effects of stress
|
Tanahashi, K.
|
|
1999
|
10 |
5-6 |
p. 359-363
|
artikel
|
| 17 |
Point defect redistribution in Si1−xGex alloys
|
Paine, A. D. N.
|
|
1999
|
10 |
5-6 |
p. 339-343
|
artikel
|
| 18 |
Radiation damage of In0.53Ga0.47As photodiodes by high energy particles
|
Ohyam, H.
|
|
1999
|
10 |
5-6 |
p. 403-405
|
artikel
|
| 19 |
Recent developments in the design and fabrication of visible photonic band gap waveguide devices
|
Charlton, M. D. B.
|
|
1999
|
10 |
5-6 |
p. 429-440
|
artikel
|
| 20 |
Selective and non-selective growth of self-aligned SiGe HBT structures by LPCVD epitaxy
|
Bonar, J. M.
|
|
1999
|
10 |
5-6 |
p. 345-349
|
artikel
|
| 21 |
Study of the kink effect in AlInAs/GaInAs/InP composite channel HFETs
|
Georgescu, B.
|
|
1999
|
10 |
5-6 |
p. 419-423
|
artikel
|
| 22 |
Tunable microcavity based on InP/air Bragg mirrors
|
Dantec, R. LE
|
|
1999
|
10 |
5-6 |
p. 447-450
|
artikel
|
| 23 |
Use of anodic tantalum pentoxide for high-density capacitor fabrication
|
Duen~as, S.
|
|
1999
|
10 |
5-6 |
p. 379-384
|
artikel
|
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