| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Analysis of a novel packaging technique for natural voltage balancing of series-connected SiC-MOSFETs
|
Alves, Luciano F.S.
|
|
|
11 |
C |
p.
|
article
|
| 2 |
A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives
|
Diehle, Patrick
|
|
|
11 |
C |
p.
|
article
|
| 3 |
Construction and electrical properties of 700 V aluminium polymer electrolytic capacitors
|
Kruse, Tim
|
|
|
11 |
C |
p.
|
article
|
| 4 |
Declaration/Conflict of Interest statement were not included in the published version of the following article, that appeared in issue Volume 5 2023 of Power Electronic Devices and Components
|
|
|
|
11 |
C |
p.
|
article
|
| 5 |
Design and performance evaluation of low-voltage solid-state DCCB using capacitor-based surge mitigation techniques
|
Moradian, Mehdi
|
|
|
11 |
C |
p.
|
article
|
| 6 |
Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT
|
Zhu, Yitai
|
|
|
11 |
C |
p.
|
article
|
| 7 |
Evaluating current sensing methods for accurate characterization in small chip size SiC MOSFETs
|
Kim, Y.
|
|
|
11 |
C |
p.
|
article
|
| 8 |
Finite element comparative study on creep and random vibrations of solder joints in BGA package
|
Depiver, Joshua A.
|
|
|
11 |
C |
p.
|
article
|
| 9 |
GaN half-bridges on electrical and thermal co-designed ceramic substrates
|
Rueß, Manuel
|
|
|
11 |
C |
p.
|
article
|
| 10 |
Impact of voids on the solder joint integrity and fatigue life of IGBT power module
|
Nebo, Sunday E.
|
|
|
11 |
C |
p.
|
article
|
| 11 |
Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment
|
Maurya, Vishwajeet
|
|
|
11 |
C |
p.
|
article
|
| 12 |
Monolithic integration of circuits in e-mode GaN HEMT technology
|
Bau, Plinio
|
|
|
11 |
C |
p.
|
article
|
| 13 |
On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs
|
Kamiński, Maciej
|
|
|
11 |
C |
p.
|
article
|
| 14 |
Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching
|
Cao, Qinze
|
|
|
11 |
C |
p.
|
article
|
| 15 |
Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications
|
Ignoumba-Ignoumba, Ndembi
|
|
|
11 |
C |
p.
|
article
|
| 16 |
Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction
|
Kato, Hiroaki
|
|
|
11 |
C |
p.
|
article
|
Journal description