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                             16 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analysis of a novel packaging technique for natural voltage balancing of series-connected SiC-MOSFETs Alves, Luciano F.S.

11 C p.
artikel
2 A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives Diehle, Patrick

11 C p.
artikel
3 Construction and electrical properties of 700 V aluminium polymer electrolytic capacitors Kruse, Tim

11 C p.
artikel
4 Declaration/Conflict of Interest statement were not included in the published version of the following article, that appeared in issue Volume 5 2023 of Power Electronic Devices and Components
11 C p.
artikel
5 Design and performance evaluation of low-voltage solid-state DCCB using capacitor-based surge mitigation techniques Moradian, Mehdi

11 C p.
artikel
6 Dynamic characteristics of neutral beam etching enabled normally-off recessed-gate GaN MOSHEMT Zhu, Yitai

11 C p.
artikel
7 Evaluating current sensing methods for accurate characterization in small chip size SiC MOSFETs Kim, Y.

11 C p.
artikel
8 Finite element comparative study on creep and random vibrations of solder joints in BGA package Depiver, Joshua A.

11 C p.
artikel
9 GaN half-bridges on electrical and thermal co-designed ceramic substrates Rueß, Manuel

11 C p.
artikel
10 Impact of voids on the solder joint integrity and fatigue life of IGBT power module Nebo, Sunday E.

11 C p.
artikel
11 Low leakage and high blocking voltage GaN-on-GaN Schottky diode by TMAH surface treatment Maurya, Vishwajeet

11 C p.
artikel
12 Monolithic integration of circuits in e-mode GaN HEMT technology Bau, Plinio

11 C p.
artikel
13 On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs Kamiński, Maciej

11 C p.
artikel
14 Optimization of the buffer layer in a 15kV SiC N-type gate commutated thyristor for safe, low-loss switching Cao, Qinze

11 C p.
artikel
15 Physical and electrical characterizations of low n-doped MOCVD GaN-on-sapphire layers for power electronics applications Ignoumba-Ignoumba, Ndembi

11 C p.
artikel
16 Stress control in trench field-plate power MOSFETs and its impact on on-resistance reduction Kato, Hiroaki

11 C p.
artikel
                             16 gevonden resultaten
 
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