| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
Aluminum metallization and wire bonding aging in power MOSFET modules
|
Ruffilli, R.
|
|
2018
|
5 |
6P3 |
p. 14641-14651
|
article
|
| 2 |
Atomic scale mechanisms and brittle to ductile transition at low size in silicon
|
Brochard, Sandrine
|
|
2018
|
5 |
6P3 |
p. 14693-14704
|
article
|
| 3 |
Concerning vacancy defects generated by moving dislocations in Si
|
Kveder, Vitaly
|
|
2018
|
5 |
6P3 |
p. 14757-14764
|
article
|
| 4 |
Defect-induced Stress Imaging in Single and Multi-crystalline Semiconductor Materials
|
Herms, Martin
|
|
2018
|
5 |
6P3 |
p. 14748-14756
|
article
|
| 5 |
Dislocation contrast in electron channelling contrast images as projections of strain-like components
|
Pascal, E.
|
|
2018
|
5 |
6P3 |
p. 14652-14661
|
article
|
| 6 |
Line defects in crystals and flux pinning in superconductors Scientific work of Reiner Labusch (1935 – 2016)
|
Doyle, T.B.
|
|
2018
|
5 |
6P3 |
p. 14662-14692
|
article
|
| 7 |
Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence
|
Sobolev, N.A.
|
|
2018
|
5 |
6P3 |
p. 14772-14777
|
article
|
| 8 |
On a Plasticity by Partial Dislocations in Silicon at Very High Stress
|
Rabier, Jacques
|
|
2018
|
5 |
6P3 |
p. 14705-14711
|
article
|
| 9 |
Point and extended defect interaction in low – high energy phosphorus implantation sequences
|
Mica, I.
|
|
2018
|
5 |
6P3 |
p. 14778-14784
|
article
|
| 10 |
Preface
|
Regula, Gabrielle
|
|
2018
|
5 |
6P3 |
p. 14639-14640
|
article
|
| 11 |
Strain buildup in 4H-SiC implanted with noble gases at low dose
|
Jiang, C.
|
|
2018
|
5 |
6P3 |
p. 14722-14731
|
article
|
| 12 |
Structural, optical, and interface properties of sputtered AlN thin films under different hydrogen dilution conditions
|
Montañez, L
|
|
2018
|
5 |
6P3 |
p. 14765-14771
|
article
|
| 13 |
Subgrains, micro-twins and dislocations characterization in monolike Si using TEM and in-situ TEM
|
Lantreibecq, A.
|
|
2018
|
5 |
6P3 |
p. 14732-14747
|
article
|
| 14 |
Temperature dependence of luminescence from dislocated Ge on Si substrate
|
Schwartz, Bernhard
|
|
2018
|
5 |
6P3 |
p. 14712-14721
|
article
|
Journal description