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41 results found

no	title	author	magazine	year	volume	issue	page(s)	type
1	A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering	Bi, Zhen		2007	37	5	p. 760-763	article
2	Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering	Yen, Tingfang		2007	37	5	p. 764-769	article
3	Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix	Hwang, E.S.		2007	37	5	p. 597-602	article
4	Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers	Liu, J.P.		2007	37	5	p. 558-563	article
5	Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence	Akagi, T.		2008	37	5	p. 603-606	article
6	Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas	Speer, Kevin M.		2007	37	5	p. 672-680	article
7	Crystalline SiNx Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition	Takizawa, Toshiyuki		2008	37	5	p. 628-634	article
8	Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures	Pietzka, C.		2008	37	5	p. 616-623	article
9	Effect of MBE Growth Conditions on Multiple Electron Transport in InN	Fehlberg, Tamara B.		2007	37	5	p. 593-596	article
10	Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures	Ajimsha, R.S.		2008	37	5	p. 770-775	article
11	Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition	Umana-Membreno, G.A.		2007	37	5	p. 569-572	article
12	Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures	Lu, Chung-Yu		2008	37	5	p. 624-627	article
13	Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging	Picard, Yoosuf N.		2007	37	5	p. 691-698	article
14	Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging	Liu, Kendrick X.		2008	37	5	p. 730-735	article
15	Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption	Wu, Yuh-Renn		2007	37	5	p. 578-584	article
16	Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles	Cheng, Jikuan		2007	37	5	p. 721-725	article
17	First-Principles Studies of Metal (111)/ZnO{0001} Interfaces	Dong, Yufeng		2007	37	5	p. 743-748	article
18	Foreword	Phillips, Jamie		2008	37	5	p. 545	article
19	Formation of Low-Resistance Ohmic Contact by Damage-Proof Selective-Area Growth of Single-Crystal n+-GaN Using Plasma-Assisted Molecular Beam Epitaxy	Seo, Hui-Chan		2008	37	5	p. 635-640	article
20	Growth of GaN Films on Si (100) Buffered with ZnO by Ion-Beam-Assisted Filtered Cathodic Vacuum Arc Technique	Ji, Xiao Hong		2007	37	5	p. 573-577	article
21	Growth of Polarity-Controlled ZnO Films on (0001) Al2O3	Park, J.S.		2007	37	5	p. 736-742	article
22	Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence	Picard, Y.N.		2007	37	5	p. 655-661	article
23	Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells	Chen, Z.		2007	37	5	p. 546-549	article
24	Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes	Caldwell, Joshua D.		2007	37	5	p. 699-705	article
25	Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers	Chen, Yi		2007	37	5	p. 706-712	article
26	Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes	Senawiratne, J.		2008	37	5	p. 607-610	article
27	Optical Hall Effect in Hexagonal InN	Hofmann, T.		2008	37	5	p. 611-615	article
28	Quantum Confinement and Carrier Localization Effects in ZnO/MgxZn1−xO Wells Synthesized by Pulsed Laser Deposition	Bowen, W.E.		2007	37	5	p. 749-754	article
29	Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC	VanMil, B.L.		2007	37	5	p. 685-690	article
30	Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors	Kang, B.S.		2007	37	5	p. 550-553	article
31	Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures	Kocan, M.		2007	37	5	p. 554-557	article
32	Silicon Carbide Terahertz Emitting Devices	Xuan, G.		2008	37	5	p. 726-729	article
33	Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses	Chen, Yi		2007	37	5	p. 713-720	article
34	Some Critical Materials and Processing Issues in SiC Power Devices	Agarwal, Anant		2007	37	5	p. 646-654	article
35	Structural and Morphological Investigation of Pendeo-Epitaxy 3C-SiC on Si Substrates	Kim, Byeung C.		2007	37	5	p. 681-684	article
36	Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy	Zhu, M.		2008	37	5	p. 641-645	article
37	Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks	Cai, Z.		2007	37	5	p. 585-592	article
38	The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs	Haney, Sarah		2007	37	5	p. 666-671	article
39	Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N	Miller, M.A.		2007	37	5	p. 564-568	article
40	1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70	Jonas, Charlotte		2007	37	5	p. 662-665	article
41	ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes	Sun, Jie		2007	37	5	p. 755-759	article

41 results found

Koninklijke Bibliotheek - National Library of the Netherlands