| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A High-Performance Ultraviolet Photoconductive Detector Based on a ZnO Film Grown by RF Sputtering
|
Bi, Zhen
|
|
2007
|
37 |
5 |
p. 760-763
|
artikel
|
| 2 |
Annealing Studies on Zinc Oxide Thin Films Deposited by Magnetron Sputtering
|
Yen, Tingfang
|
|
2007
|
37 |
5 |
p. 764-769
|
artikel
|
| 3 |
Cathodoluminescence Study on Spatial Luminescence Properties of InN/GaN Multiple Quantum Wells Consisting of 1-Monolayer-Thick InN Wells/GaN Matrix
|
Hwang, E.S.
|
|
2007
|
37 |
5 |
p. 597-602
|
artikel
|
| 4 |
Characteristics of Green Light-Emitting Diodes Using an InGaN:Mg/GaN:Mg Superlattice as p-Type Hole Injection and Contact Layers
|
Liu, J.P.
|
|
2007
|
37 |
5 |
p. 558-563
|
artikel
|
| 5 |
Correlation Between Threading Dislocations and Nonradiative Recombination Centers in InN Observed by IR Cathodoluminescence
|
Akagi, T.
|
|
2008
|
37 |
5 |
p. 603-606
|
artikel
|
| 6 |
Cross-sectional TEM and KOH-Etch Studies of Extended Defects in 3C-SiC p+n Junction Diodes Grown on 4H-SiC Mesas
|
Speer, Kevin M.
|
|
2007
|
37 |
5 |
p. 672-680
|
artikel
|
| 7 |
Crystalline SiNx Ultrathin Films Grown on AlGaN/GaN Using In Situ Metalorganic Chemical Vapor Deposition
|
Takizawa, Toshiyuki
|
|
2008
|
37 |
5 |
p. 628-634
|
artikel
|
| 8 |
Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures
|
Pietzka, C.
|
|
2008
|
37 |
5 |
p. 616-623
|
artikel
|
| 9 |
Effect of MBE Growth Conditions on Multiple Electron Transport in InN
|
Fehlberg, Tamara B.
|
|
2007
|
37 |
5 |
p. 593-596
|
artikel
|
| 10 |
Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes Grown by Pulsed Laser Deposition at Different Oxygen Pressures
|
Ajimsha, R.S.
|
|
2008
|
37 |
5 |
p. 770-775
|
artikel
|
| 11 |
Electrically Active Defects in GaN Layers Grown With and Without Fe-doped Buffers by Metal-organic Chemical Vapor Deposition
|
Umana-Membreno, G.A.
|
|
2007
|
37 |
5 |
p. 569-572
|
artikel
|
| 12 |
Enhancement of the Schottky Barrier Height using a Nitrogen-Rich Tungsten Nitride Thin Film for the Schottky Contacts on AlGaN/GaN Heterostructures
|
Lu, Chung-Yu
|
|
2008
|
37 |
5 |
p. 624-627
|
artikel
|
| 13 |
Epitaxial SiC Growth Morphology and Extended Defects Investigated by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging
|
Picard, Yoosuf N.
|
|
2007
|
37 |
5 |
p. 691-698
|
artikel
|
| 14 |
Examination of In-Grown Stacking Faults in 8°- and 4°-Offcut 4H-SiC Epitaxy by Photoluminescence Imaging
|
Liu, Kendrick X.
|
|
2008
|
37 |
5 |
p. 730-735
|
artikel
|
| 15 |
Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption
|
Wu, Yuh-Renn
|
|
2007
|
37 |
5 |
p. 578-584
|
artikel
|
| 16 |
Faster Growth of 6H-SiC Single Crystals by a Physical Vapor Transport Technique with Two Crucibles
|
Cheng, Jikuan
|
|
2007
|
37 |
5 |
p. 721-725
|
artikel
|
| 17 |
First-Principles Studies of Metal (111)/ZnO{0001} Interfaces
|
Dong, Yufeng
|
|
2007
|
37 |
5 |
p. 743-748
|
artikel
|
| 18 |
Foreword
|
Phillips, Jamie
|
|
2008
|
37 |
5 |
p. 545
|
artikel
|
| 19 |
Formation of Low-Resistance Ohmic Contact by Damage-Proof Selective-Area Growth of Single-Crystal n+-GaN Using Plasma-Assisted Molecular Beam Epitaxy
|
Seo, Hui-Chan
|
|
2008
|
37 |
5 |
p. 635-640
|
artikel
|
| 20 |
Growth of GaN Films on Si (100) Buffered with ZnO by Ion-Beam-Assisted Filtered Cathodic Vacuum Arc Technique
|
Ji, Xiao Hong
|
|
2007
|
37 |
5 |
p. 573-577
|
artikel
|
| 21 |
Growth of Polarity-Controlled ZnO Films on (0001) Al2O3
|
Park, J.S.
|
|
2007
|
37 |
5 |
p. 736-742
|
artikel
|
| 22 |
Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence
|
Picard, Y.N.
|
|
2007
|
37 |
5 |
p. 655-661
|
artikel
|
| 23 |
Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells
|
Chen, Z.
|
|
2007
|
37 |
5 |
p. 546-549
|
artikel
|
| 24 |
Influence of Temperature on Shockley Stacking Fault Expansion and Contraction in SiC PiN Diodes
|
Caldwell, Joshua D.
|
|
2007
|
37 |
5 |
p. 699-705
|
artikel
|
| 25 |
Investigation of Electron–Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers
|
Chen, Yi
|
|
2007
|
37 |
5 |
p. 706-712
|
artikel
|
| 26 |
Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes
|
Senawiratne, J.
|
|
2008
|
37 |
5 |
p. 607-610
|
artikel
|
| 27 |
Optical Hall Effect in Hexagonal InN
|
Hofmann, T.
|
|
2008
|
37 |
5 |
p. 611-615
|
artikel
|
| 28 |
Quantum Confinement and Carrier Localization Effects in ZnO/MgxZn1−xO Wells Synthesized by Pulsed Laser Deposition
|
Bowen, W.E.
|
|
2007
|
37 |
5 |
p. 749-754
|
artikel
|
| 29 |
Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC
|
VanMil, B.L.
|
|
2007
|
37 |
5 |
p. 685-690
|
artikel
|
| 30 |
Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors
|
Kang, B.S.
|
|
2007
|
37 |
5 |
p. 550-553
|
artikel
|
| 31 |
Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
|
Kocan, M.
|
|
2007
|
37 |
5 |
p. 554-557
|
artikel
|
| 32 |
Silicon Carbide Terahertz Emitting Devices
|
Xuan, G.
|
|
2008
|
37 |
5 |
p. 726-729
|
artikel
|
| 33 |
Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses
|
Chen, Yi
|
|
2007
|
37 |
5 |
p. 713-720
|
artikel
|
| 34 |
Some Critical Materials and Processing Issues in SiC Power Devices
|
Agarwal, Anant
|
|
2007
|
37 |
5 |
p. 646-654
|
artikel
|
| 35 |
Structural and Morphological Investigation of Pendeo-Epitaxy 3C-SiC on Si Substrates
|
Kim, Byeung C.
|
|
2007
|
37 |
5 |
p. 681-684
|
artikel
|
| 36 |
Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy
|
Zhu, M.
|
|
2008
|
37 |
5 |
p. 641-645
|
artikel
|
| 37 |
Synthesis and Properties of High-Quality InN Nanowires and Nanonetworks
|
Cai, Z.
|
|
2007
|
37 |
5 |
p. 585-592
|
artikel
|
| 38 |
The Effects of Implant Activation Anneal on the Effective Inversion Layer Mobility of 4H-SiC MOSFETs
|
Haney, Sarah
|
|
2007
|
37 |
5 |
p. 666-671
|
artikel
|
| 39 |
Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N
|
Miller, M.A.
|
|
2007
|
37 |
5 |
p. 564-568
|
artikel
|
| 40 |
1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70
|
Jonas, Charlotte
|
|
2007
|
37 |
5 |
p. 662-665
|
artikel
|
| 41 |
ZnO Thin Film, Device, and Circuit Fabrication using Low-Temperature PECVD Processes
|
Sun, Jie
|
|
2007
|
37 |
5 |
p. 755-759
|
artikel
|
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