| no |
title |
author |
magazine |
year |
volume |
issue |
page(s) |
type |
| 1 |
A study of cracking in GaN grown on silicon by molecular beam epitaxy
|
Jothilingam, R.
|
|
2001
|
30 |
7 |
p. 821-824
|
article
|
| 2 |
Defects in annealed 1.5 MeV boron implanted p-type silicon
|
Dai, J. Y.
|
|
2001
|
30 |
7 |
p. 850-854
|
article
|
| 3 |
Development of Al-free ohmic contact to n-GaN
|
Kim, Dae-Woo
|
|
2001
|
30 |
7 |
p. 855-860
|
article
|
| 4 |
Effect of Pt barrier on thermal stability of Ti/Al/Pt/Au in ohmic contact with Si-implanted n-type GaN layers
|
Lee, Ching-Tingh
|
|
2001
|
30 |
7 |
p. 861-865
|
article
|
| 5 |
Effects of hot-electron stress on electrical performances in AlGaAs/InGaAs pseudomorphic high electron transistors
|
Choi, K. J.
|
|
2001
|
30 |
7 |
p. 885-890
|
article
|
| 6 |
Foreword
|
Hobart, Karl D.
|
|
2001
|
30 |
7 |
p. 797
|
article
|
| 7 |
High mobility electron heterostructure wafer fused onto LiNbO3
|
Friedland, K. J.
|
|
2001
|
30 |
7 |
p. 817-820
|
article
|
| 8 |
High quality AIN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy
|
Kipshidze, G.
|
|
2001
|
30 |
7 |
p. 825-828
|
article
|
| 9 |
Hydrogen plasma passivation of bulk GaAs and Al0.3Ga0.7As/GaAs multiple-quantum-well structures on Si substrates
|
Wang, G.
|
|
2001
|
30 |
7 |
p. 845-849
|
article
|
| 10 |
InAs/InGaSb photodetectors grown on GaAs bonded substrates
|
Vilela, M. F.
|
|
2001
|
30 |
7 |
p. 798-801
|
article
|
| 11 |
Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE
|
Zubia, D.
|
|
2001
|
30 |
7 |
p. 812-816
|
article
|
| 12 |
Interfacial reaction and microstructural evolution for electroplated Ni and electroless Ni in the under bump metallurgy with 42Sn58Bi solder during annealing
|
Young, Bi-Lian
|
|
2001
|
30 |
7 |
p. 878-884
|
article
|
| 13 |
Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates
|
Moran, P. D.
|
|
2001
|
30 |
7 |
p. 802-806
|
article
|
| 14 |
Low-noise solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors
|
Li, Ting
|
|
2001
|
30 |
7 |
p. 872-877
|
article
|
| 15 |
N-type doping of 4H-SiC with phosphorus Co-implanted with C or Si
|
Zhu, L.
|
|
2001
|
30 |
7 |
p. 891-894
|
article
|
| 16 |
Silicon layer transfer using wafer bonding and debonding
|
Colinge, Cynthia
|
|
2001
|
30 |
7 |
p. 841-844
|
article
|
| 17 |
Spatial distribution of metal fillers in isotropically conductive adhesives
|
Fu, Y.
|
|
2001
|
30 |
7 |
p. 866-871
|
article
|
| 18 |
Strain induced lateral ordering in Ga0.22In0.78As/Ga0.22In0.78P short period superlattices on (001) InP
|
Dotor, M. L.
|
|
2001
|
30 |
7 |
p. 895-899
|
article
|
| 19 |
Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy
|
Ok, Young-Woo
|
|
2001
|
30 |
7 |
p. 900-906
|
article
|
| 20 |
Substrate smoothing using gas cluster ion beam processing
|
Allen, L. P.
|
|
2001
|
30 |
7 |
p. 829-833
|
article
|
| 21 |
The generic nature of the Smart-Cut® process for thin film transfer
|
Aspar, B.
|
|
2001
|
30 |
7 |
p. 834-840
|
article
|
| 22 |
Uniaxial, tensile-strained Si devices
|
Belford, Rona E.
|
|
2001
|
30 |
7 |
p. 807-811
|
article
|
Journal description