| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A microindentation technique for determining strength of solder interface with silver metallization on Co-fired multilayer ceramic substrate
|
Shang, Jian Ku
|
|
2001
|
30 |
3 |
p. 260-265
|
artikel
|
| 2 |
An optimum approach for fabrication of tapered hemispherical-end fiber for laser module packaging
|
Yang, H. M.
|
|
2001
|
30 |
3 |
p. 271-274
|
artikel
|
| 3 |
A transmission electron microscopy study of microstructure evolution with increasing anneal temperature in Ti/Al ohmic contacts to n-GaN
|
Bright, A. N.
|
|
2001
|
30 |
3 |
p. L13-L16
|
artikel
|
| 4 |
Boron diffusion into 6H-SiC through graphite mask
|
Soloviev, S.
|
|
2001
|
30 |
3 |
p. 224-227
|
artikel
|
| 5 |
Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy
|
Kang, Sangbeom
|
|
2001
|
30 |
3 |
p. 156-161
|
artikel
|
| 6 |
Chemical and morphological studies of plasma-treated integrated circuit bond pads
|
Chong, Y. F.
|
|
2001
|
30 |
3 |
p. 275-282
|
artikel
|
| 7 |
Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes
|
Zhang, Q.
|
|
2001
|
30 |
3 |
p. 196-201
|
artikel
|
| 8 |
Comparison of F2 plasma chemistries for deep etching of SiC
|
Leerungnawarat, P.
|
|
2001
|
30 |
3 |
p. 202-206
|
artikel
|
| 9 |
Effect of processing conditions on inversion layer mobility and interface state density in 4H−SiC MOSFETs
|
Banerjee, S.
|
|
2001
|
30 |
3 |
p. 253-259
|
artikel
|
| 10 |
Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers
|
Saddow, S. E.
|
|
2001
|
30 |
3 |
p. 228-234
|
artikel
|
| 11 |
Effects of surface treatments on the electrical and the microstructural changes of Pd contact on p-type GaN
|
Kim, Jong Kyu
|
|
2001
|
30 |
3 |
p. 170-174
|
artikel
|
| 12 |
Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN
|
Kim, Jong Kyu
|
|
2001
|
30 |
3 |
p. 129-133
|
artikel
|
| 13 |
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
|
Polyakov, A. Y.
|
|
2001
|
30 |
3 |
p. 147-155
|
artikel
|
| 14 |
Etching of silicon carbide for device fabrication and through via-hole formation
|
Khan, F. A.
|
|
2001
|
30 |
3 |
p. 212-219
|
artikel
|
| 15 |
Foreword
|
Adesida, Ilesanmi
|
|
2001
|
30 |
3 |
p. 109
|
artikel
|
| 16 |
Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
|
Hsu, J. W. P.
|
|
2001
|
30 |
3 |
p. 115-122
|
artikel
|
| 17 |
Inductively coupled plasma etch damage in 4H−SiC investigated by Schottky diode characterization
|
Danielsson, E.
|
|
2001
|
30 |
3 |
p. 247-252
|
artikel
|
| 18 |
Influence of carrier freeze-out on SiC Schottky junction admittance
|
Los, Andrei V.
|
|
2001
|
30 |
3 |
p. 235-241
|
artikel
|
| 19 |
Light emission from interface traps and bulk defects in SiC MOSFETs
|
Stahlbush, R. E.
|
|
2001
|
30 |
3 |
p. 188-195
|
artikel
|
| 20 |
Phase equilibria in transition metal Al-Ga-N systems and thermal stability of contacts to AlGaN
|
Schweitz, K. O.
|
|
2001
|
30 |
3 |
p. 175-182
|
artikel
|
| 21 |
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
|
Lee, C. D.
|
|
2001
|
30 |
3 |
p. 162-169
|
artikel
|
| 22 |
Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures
|
Bradley, S. T.
|
|
2001
|
30 |
3 |
p. 123-128
|
artikel
|
| 23 |
Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide
|
Lee, S. -K.
|
|
2001
|
30 |
3 |
p. 242-246
|
artikel
|
| 24 |
Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD
|
Wagner, G.
|
|
2001
|
30 |
3 |
p. 207-211
|
artikel
|
| 25 |
Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures
|
Hsu, J. W. P.
|
|
2001
|
30 |
3 |
p. 110-114
|
artikel
|
| 26 |
The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction
|
Ng, H. M.
|
|
2001
|
30 |
3 |
p. 134-137
|
artikel
|
| 27 |
The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment
|
Kim, Dae-Woo
|
|
2001
|
30 |
3 |
p. 183-187
|
artikel
|
| 28 |
Thermally stable Nb and Nb/Au ohmic contacts to p-GaN
|
Kim, Han-Ki
|
|
2001
|
30 |
3 |
p. 266-270
|
artikel
|
| 29 |
The temperature dependence of the thermal conductivity of single crystal GaN films
|
Luo, C.
|
|
2001
|
30 |
3 |
p. 138-146
|
artikel
|
| 30 |
Vanadium doping of 4H SiC from a solid source: Photoluminescence investigation
|
Koshka, Y.
|
|
2001
|
30 |
3 |
p. 220-223
|
artikel
|
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