| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Creep phenomena in lead-free solders
|
Igoshev, V. I.
|
|
|
29 |
2 |
p. 244-250
|
artikel
|
| 2 |
Creep phenomena in lead-free solders
|
Igoshev, V. I.
|
|
2000
|
29 |
2 |
p. 244-250
|
artikel
|
| 3 |
Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications
|
Kopf, R. F.
|
|
|
29 |
2 |
p. 222-224
|
artikel
|
| 4 |
Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications
|
Kopf, R. F.
|
|
2000
|
29 |
2 |
p. 222-224
|
artikel
|
| 5 |
Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
|
Brunner, F.
|
|
|
29 |
2 |
p. 205-209
|
artikel
|
| 6 |
Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE
|
Brunner, F.
|
|
2000
|
29 |
2 |
p. 205-209
|
artikel
|
| 7 |
Effects of surface porosity on tungsten trioxide(WO3) films’ electrochromic performance
|
Lee, W. J.
|
|
|
29 |
2 |
p. 183-187
|
artikel
|
| 8 |
Effects of surface porosity on tungsten trioxide(WO3) films’ electrochromic performance
|
Lee, W. J.
|
|
2000
|
29 |
2 |
p. 183-187
|
artikel
|
| 9 |
Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy
|
Kim, Tong-Ho
|
|
|
29 |
2 |
p. 215-221
|
artikel
|
| 10 |
Electrical properties of InAlAs/InAsxP1-x/InP composite-channel modulation-doped structures grown by solid source molecular beam epitaxy
|
Kim, Tong-Ho
|
|
2000
|
29 |
2 |
p. 215-221
|
artikel
|
| 11 |
Etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning
|
Park, Se-Ki
|
|
|
29 |
2 |
p. 195-198
|
artikel
|
| 12 |
Etching behavior of GaAs/AlGaAs multilayer structure during laser beam scanning
|
Park, Se-Ki
|
|
2000
|
29 |
2 |
p. 195-198
|
artikel
|
| 13 |
High-temperature hysteretic electronic effects of (AlxGa1−x)0.5In0.5P (x>0.65)
|
Bieg, B.
|
|
|
29 |
2 |
p. 231-236
|
artikel
|
| 14 |
High-temperature hysteretic electronic effects of (AlxGa1−x)0.5In0.5P (x<0.65)
|
Bieg, B.
|
|
2000
|
29 |
2 |
p. 231-236
|
artikel
|
| 15 |
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
|
Xu, Dapeng
|
|
|
29 |
2 |
p. 177-182
|
artikel
|
| 16 |
Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
|
Xu, Dapeng
|
|
2000
|
29 |
2 |
p. 177-182
|
artikel
|
| 17 |
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures
|
Lutz, Charles R.
|
|
|
29 |
2 |
p. 225-230
|
artikel
|
| 18 |
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures
|
Lutz, Charles R.
|
|
2000
|
29 |
2 |
p. 225-230
|
artikel
|
| 19 |
Phosphorus implantation into 4H-silicon carbide
|
Capano, M. A.
|
|
|
29 |
2 |
p. 210-214
|
artikel
|
| 20 |
Phosphorus implantation into 4H-silicon carbide
|
Capano, M. A.
|
|
2000
|
29 |
2 |
p. 210-214
|
artikel
|
| 21 |
The adhesion strength of A lead-free solder hot-dipped on copper substrate
|
Yu, Shan-Pu
|
|
|
29 |
2 |
p. 237-243
|
artikel
|
| 22 |
The adhesion strength of A lead-free solder hot-dipped on copper substrate
|
Yu, Shan-Pu
|
|
2000
|
29 |
2 |
p. 237-243
|
artikel
|
| 23 |
The removal of deformed submicron particles from silicon wafers by spin rinse and megasonics
|
Zhang, Fan
|
|
|
29 |
2 |
|
artikel
|
| 24 |
The removal of deformed submicron particles from silicon wafers by spin rinse and megasonics
|
Zhang, Fan
|
|
2000
|
29 |
2 |
p. 199-204
|
artikel
|
| 25 |
Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
|
Tan, I. -H.
|
|
|
29 |
2 |
p. 188-194
|
artikel
|
| 26 |
Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers
|
Tan, I. -H.
|
|
2000
|
29 |
2 |
p. 188-194
|
artikel
|
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