| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A new LPE growth method of semiconductor heterostructures with thickness profile variation of epitaxial layers
|
Mishurnyi, V. A.
|
|
1998
|
27 |
8 |
p. 1003-1004
|
artikel
|
| 2 |
An optically addressed ZnO ultraviolet light modulator with 10:1 contrast
|
Wraback, M.
|
|
1998
|
27 |
8 |
p. 1005
|
artikel
|
| 3 |
Effects of intermediate semiconductor layers on carrier transport mechanisms through p-ZnSe/metals interfaces
|
Kagawa, T.
|
|
1998
|
27 |
8 |
p. 998-1002
|
artikel
|
| 4 |
Electrical properties at p-ZnSe/metal interfaces
|
Kawakami, T.
|
|
1998
|
27 |
8 |
p. 929-935
|
artikel
|
| 5 |
Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability
|
Kopf, R. F.
|
|
1998
|
27 |
8 |
p. 954-960
|
artikel
|
| 6 |
Gate metallurgy effects in InAs/AlSb HFETs: Preliminary results and demonstration of surface fermi level shifts
|
Bolognesi, C. R.
|
|
1998
|
27 |
8 |
p. L54-L57
|
artikel
|
| 7 |
Growth characteristics of CdZnTe layers grown by metalorganic vapor phase epitaxy using dimethylzinc, dimethylcadmium, diethyltelluride, and dimethyltelluride as precursors
|
Yasuda, K.
|
|
1998
|
27 |
8 |
p. 948-953
|
artikel
|
| 8 |
Influence of surface contamination on metal/metal bond contact quality
|
Schneuwly, A.
|
|
1998
|
27 |
8 |
p. 990-997
|
artikel
|
| 9 |
MBE growth of high quality GaN on LiGaO2
|
Doolittle, W. A.
|
|
1998
|
27 |
8 |
p. L58-L60
|
artikel
|
| 10 |
Phase coarsening and crack growth rate during thermo-mechanical cycling of 63Sn37Pb solder joints
|
Hacke, P. L.
|
|
1998
|
27 |
8 |
p. 941-947
|
artikel
|
| 11 |
Phase equilibria, defect chemistry and semiconducting properties of CdTe(s)—Thermodynamic modeling
|
Chen, Q.
|
|
1998
|
27 |
8 |
p. 961-971
|
artikel
|
| 12 |
Plasma chemistries for dry etching of NiFe and NiFeCo
|
Jung, K. B.
|
|
1998
|
27 |
8 |
p. 972-978
|
artikel
|
| 13 |
Stoichiometry-dependent deep levels in undoped p-type Al0.38Ga0.62As grown by liquid phase epitaxy
|
Watanabe, Hiroshi
|
|
1998
|
27 |
8 |
p. 979-984
|
artikel
|
| 14 |
Synchrotron x-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides
|
Tanaka, Yuusuke
|
|
1998
|
27 |
8 |
p. 936-940
|
artikel
|
| 15 |
The application of flip-chip bonding interconnection technique on the module assembly of 10 Gbps laser diode
|
Han, Haksoo
|
|
1998
|
27 |
8 |
p. 985-989
|
artikel
|
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