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Journal description
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Details for article 14 of 15 found articles
| Title: |
Synchrotron x-ray irradiation effects on the device characteristics and the resistance to hot-carrier damage of MOSFETs with 4 nm thick gate oxides |
| Author: |
Tanaka, Yuusuke Tanabe, Akira Suzuki, Katsumi Miyatake, Tsutomu Hirose, Masaki |
| Appeared in: |
Journal of electronic materials |
| Paging: | Volume 27 (1998) nr. 8 pages 936-940 |
| Year: |
1998 |
| Contents: | |
| Publisher: |
Springer-Verlag, New York |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 15 found articles
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