| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A temperature-dependent model for the complex dielectric function of GaAs
|
Kamlet, Leonard I.
|
|
1997
|
26 |
12 |
p. 1409-1416
|
artikel
|
| 2 |
Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
|
Petit, P.
|
|
1997
|
26 |
12 |
p. L32-L35
|
artikel
|
| 3 |
Effects of layer design on the performance of InAs/AlSb/GaSb resonant interband tunneling diodes on GaAs substrates
|
Shiralagi, Kumar
|
|
1997
|
26 |
12 |
p. 1417-1421
|
artikel
|
| 4 |
Electrical properties of Si1−x−yGexCy and Ge1−yCy alloys
|
Chen, F.
|
|
1997
|
26 |
12 |
p. 1371-1375
|
artikel
|
| 5 |
Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation
|
Decorby, R. G.
|
|
1997
|
26 |
12 |
p. L25-L28
|
artikel
|
| 6 |
Enhanced diffusion and improved device performance using dual spectral source rapid thermal processing
|
Singh, R.
|
|
1997
|
26 |
12 |
p. 1422-1427
|
artikel
|
| 7 |
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells
|
Sengupta, D. K.
|
|
1997
|
26 |
12 |
p. 1382-1388
|
artikel
|
| 8 |
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm
|
Sengupta, D. K.
|
|
1997
|
26 |
12 |
p. 1376-1381
|
artikel
|
| 9 |
Identification of Cu-related thermally stimulated current trap in undoped semi-insulating GaAs
|
Fang, Z. -Q.
|
|
1997
|
26 |
12 |
p. L29-L31
|
artikel
|
| 10 |
Modeling and algorithm development for automated optical endpointing of an HBT emitter etch
|
Hanish, C. K.
|
|
1997
|
26 |
12 |
p. 1401-1408
|
artikel
|
| 11 |
Preparation of PbTiO3 thin films by plasma enhanced MOCVD and the effect of rapid thermal annealing
|
Hahn, Yoon-Bong
|
|
1997
|
26 |
12 |
p. 1394-1400
|
artikel
|
| 12 |
Temperature variation of optical energy gap values of the compound CuGaTe2
|
Rivero, A.
|
|
1997
|
26 |
12 |
p. 1428-1432
|
artikel
|
| 13 |
X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001)
|
Edgar, J. H.
|
|
1997
|
26 |
12 |
p. 1389-1393
|
artikel
|
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