Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm
Titel:
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm
Auteur:
Sengupta, D. K. Jackson, S. L Curtis, A. P. Fang, W. Malin, J. I. Horton, T. U. Hartman, Q. Kuo, H. C. Thomas, S. Miller, J. Hsieh, K. C. Adesida, I. Chuang, S. L. Feng, M. Stillman, G. E. Chang, Y. C. Wu, W. Tucker, J. Chen, H. Gibson, J. M. Mazumder, J. Li, L. Liu, H. C.