Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells
Titel:
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells
Auteur:
Sengupta, D. K. Jackson, S. L. Curtis, A. P. Fang, W. Malin, J. I. Horton, T. U. Kuo, H. C. Moy, A. Miller, J. Hsieh, K. C. Cheng, K. Y. Chen, H. Adesida, I. Chuang, S. L. Feng, M. Stillman, G. E. Wu, W. Tucker, J. Chang, Y. C. Li, L. Liu, H. C.