| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio study of point defects in dielectrics based on Pr oxides
|
Da¸browski, J.
|
|
2006
|
9 |
6 |
p. 897-903
7 p.
|
artikel
|
| 2 |
Al-oxynitrides as a buffer layer for Pr2O3/SiC interfaces
|
Sohal, Rakesh
|
|
2006
|
9 |
6 |
p. 945-948
4 p.
|
artikel
|
| 3 |
Behaviour of injected electrons in high-k dielectric layers
|
Avichail-Bibi, R.
|
|
2006
|
9 |
6 |
p. 985-988
4 p.
|
artikel
|
| 4 |
Carrier transport and related phenomena in MOS devices
|
Bouazra, A.
|
|
2006
|
9 |
6 |
p. 989-994
6 p.
|
artikel
|
| 5 |
Characterization of ALD-deposited Al oxide films for high-k purposes: A chemical investigation
|
Alberici, S.G.
|
|
2006
|
9 |
6 |
p. 1000-1005
6 p.
|
artikel
|
| 6 |
Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition
|
Frohlich, K.
|
|
2006
|
9 |
6 |
p. 1065-1072
8 p.
|
artikel
|
| 7 |
Chemical compositions and optical properties of HfO x N y thin films at different substrate temperatures
|
Liu, M.
|
|
2006
|
9 |
6 |
p. 876-879
4 p.
|
artikel
|
| 8 |
Effect of rapid thermal annealing of sputtered aluminium nitride film in an oxygen ambient
|
Jang, Kyungsoo
|
|
2006
|
9 |
6 |
p. 1137-1141
5 p.
|
artikel
|
| 9 |
Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition
|
Curreem, K.K.S.
|
|
2006
|
9 |
6 |
p. 940-944
5 p.
|
artikel
|
| 10 |
Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator
|
Di, Zengfeng
|
|
2006
|
9 |
6 |
p. 959-963
5 p.
|
artikel
|
| 11 |
Electrical and structural characterization of PLD grown CeO2–HfO2 laminated high-k gate dielectrics
|
Karakaya, K.
|
|
2006
|
9 |
6 |
p. 1061-1064
4 p.
|
artikel
|
| 12 |
Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure
|
Sugimoto, Youhei
|
|
2006
|
9 |
6 |
p. 1031-1036
6 p.
|
artikel
|
| 13 |
Electrical properties of SiO2/TiO2 high-k gate dielectric stack
|
Bera, M.K.
|
|
2006
|
9 |
6 |
p. 909-917
9 p.
|
artikel
|
| 14 |
EPR characterization of defects in monoclinic powders of ZrO2 and HfO2
|
Wright, Sandra
|
|
2006
|
9 |
6 |
p. 892-896
5 p.
|
artikel
|
| 15 |
Etch damage evaluation on (Bi4− x La x )Ti3O12 thin films during the etch process using inductively coupled plasma sources
|
Kim, Jong-Gyu
|
|
2006
|
9 |
6 |
p. 1108-1114
7 p.
|
artikel
|
| 16 |
Growth of epitaxial Pr2O3 layers on Si(111)
|
Jeutter, N.M.
|
|
2006
|
9 |
6 |
p. 1079-1083
5 p.
|
artikel
|
| 17 |
Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios
|
Toledano-Luque, M.
|
|
2006
|
9 |
6 |
p. 1020-1024
5 p.
|
artikel
|
| 18 |
High temperature characterization of high-κ dielectrics on SiC
|
Weng, M.H.
|
|
2006
|
9 |
6 |
p. 1133-1136
4 p.
|
artikel
|
| 19 |
Impact of defects on the high-κ/MG stack: The electrical characterization challenge
|
Pantisano, Luigi
|
|
2006
|
9 |
6 |
p. 880-884
5 p.
|
artikel
|
| 20 |
Influence of polarization electric field on the dielectric properties of BaTiO3-based ceramics
|
Benlahrache, M.T.
|
|
2006
|
9 |
6 |
p. 1115-1118
4 p.
|
artikel
|
| 21 |
Interfaces between γ - Al 2 O 3 and silicon
|
Boulenc, P.
|
|
2006
|
9 |
6 |
p. 949-953
5 p.
|
artikel
|
| 22 |
Investigation of both interface states spectrum and deep oxide states from differential isothermal transient spectroscopy
|
Muret, P.
|
|
2006
|
9 |
6 |
p. 885-888
4 p.
|
artikel
|
| 23 |
Investigation of electrically active defects in amorphous barium titanate thin films
|
El Kamel, F.
|
|
2006
|
9 |
6 |
p. 923-927
5 p.
|
artikel
|
| 24 |
Investigation of high-K gate stacks with epitaxial Gd2O3 and FUSI NiSi metal gates down to CET=0.86nm
|
Gottlob, H.D.B.
|
|
2006
|
9 |
6 |
p. 904-908
5 p.
|
artikel
|
| 25 |
Investigation of strontium tantalate thin films for high-k gate dielectric applications
|
Silinskas, M.
|
|
2006
|
9 |
6 |
p. 1102-1107
6 p.
|
artikel
|
| 26 |
Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials
|
Gomeniuk, Y.
|
|
2006
|
9 |
6 |
p. 980-984
5 p.
|
artikel
|
| 27 |
Low temperature processed hafnium oxide: Structural and electrical properties
|
Pereira, L.
|
|
2006
|
9 |
6 |
p. 1125-1132
8 p.
|
artikel
|
| 28 |
Modeling the silicon–hafnia interface
|
Nieminen, R.M.
|
|
2006
|
9 |
6 |
p. 928-933
6 p.
|
artikel
|
| 29 |
Monte carlo study of mobility in Si devices with HfO 2 -based oxides
|
Ferrari, Giulio
|
|
2006
|
9 |
6 |
p. 995-999
5 p.
|
artikel
|
| 30 |
Novel high-K inverse silver oxide phases of SiO 2 , GeO 2 , SnO 2 , and their alloys
|
Sevik, C.
|
|
2006
|
9 |
6 |
p. 1097-1101
5 p.
|
artikel
|
| 31 |
Optimization of electric properties of high-k zirconium dioxide by varying deposition and annealing conditions
|
Silinskas, M.
|
|
2006
|
9 |
6 |
p. 1037-1042
6 p.
|
artikel
|
| 32 |
Performance improvement of CMOS device utilizing poly-Si/HfSiON gate stack and its reliability concern for 65nm technology and beyond
|
Kimizuka, N.
|
|
2006
|
9 |
6 |
p. 860-869
10 p.
|
artikel
|
| 33 |
Photoelectron spectroscopy (XPS) and photoelectron diffraction (XPD) studies on the system hafnium silicide and hafnium oxide on Si(100)
|
Weier, D.
|
|
2006
|
9 |
6 |
p. 1055-1060
6 p.
|
artikel
|
| 34 |
Photoemission (XPS and XPD) study of epitaxial LaAlO3 film grown on SrTiO3(001)
|
El Kazzi, M.
|
|
2006
|
9 |
6 |
p. 954-958
5 p.
|
artikel
|
| 35 |
Praseodymium based high-k dielectrics grown on Si and SiC substrates
|
Lo Nigro, Raffaella
|
|
2006
|
9 |
6 |
p. 1073-1078
6 p.
|
artikel
|
| 36 |
Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric
|
Ťapajna, M.
|
|
2006
|
9 |
6 |
p. 969-974
6 p.
|
artikel
|
| 37 |
Precursor-dependent structural and electrical characteristics of atomic layer deposited films: Case study on titanium oxide
|
Jõgi, Indrek
|
|
2006
|
9 |
6 |
p. 1084-1089
6 p.
|
artikel
|
| 38 |
Preface
|
Dabrowski, J.
|
|
2006
|
9 |
6 |
p. 859-
1 p.
|
artikel
|
| 39 |
Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique
|
Crupi, Isodiana
|
|
2006
|
9 |
6 |
p. 889-891
3 p.
|
artikel
|
| 40 |
Relaxation of defects in amorphous barium titanate thin films
|
El Kamel, F.
|
|
2006
|
9 |
6 |
p. 918-922
5 p.
|
artikel
|
| 41 |
Silicate formation at the interface of Hf-oxide as a high-k dielectrics and Si(001) surfaces
|
Schmeißer, D.
|
|
2006
|
9 |
6 |
p. 934-939
6 p.
|
artikel
|
| 42 |
Spectroscopic ellipsometry characterization of ZrO2 thin films by nitrogen-assisted reactive magnetron sputtering
|
Zhu, L.Q.
|
|
2006
|
9 |
6 |
p. 1025-1030
6 p.
|
artikel
|
| 43 |
Structural and electronic properties of zirconia phases: A FP-LAPW investigations
|
Terki, R.
|
|
2006
|
9 |
6 |
p. 1006-1013
8 p.
|
artikel
|
| 44 |
Structural and interfacial properties of high-k HfO x N y gate dielectric films
|
He, G.
|
|
2006
|
9 |
6 |
p. 870-875
6 p.
|
artikel
|
| 45 |
Structural and vibrational properties of high-dielectric oxides, HfO2 and TiO2: A comparative study
|
Debernardi, A.
|
|
2006
|
9 |
6 |
p. 1014-1019
6 p.
|
artikel
|
| 46 |
Structural, electrical and optical properties of GZO/HfO2/GZO transparent MIM capacitors
|
Ahn, Byung Du
|
|
2006
|
9 |
6 |
p. 1119-1124
6 p.
|
artikel
|
| 47 |
Structure analysis of the system Hafnium/Silicon ( 1 0 0 ) by means of X-ray photoelectron spectroscopy and X-ray photoelectron diffraction (XPD)
|
Flüchter, C.R.
|
|
2006
|
9 |
6 |
p. 1049-1054
6 p.
|
artikel
|
| 48 |
The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
|
Nabatame, T.
|
|
2006
|
9 |
6 |
p. 975-979
5 p.
|
artikel
|
| 49 |
Work function control at metal–oxide interfaces in CMOS
|
Tse, K.
|
|
2006
|
9 |
6 |
p. 964-968
5 p.
|
artikel
|
| 50 |
XRD and EXAFS studies of HfO 2 crystallisation in SiO 2 – HfO 2 films
|
Afify, N.D.
|
|
2006
|
9 |
6 |
p. 1043-1048
6 p.
|
artikel
|
| 51 |
ZrAlO ternary oxide as a candidate for high-k dielectrics
|
Bizarro, M.
|
|
2006
|
9 |
6 |
p. 1090-1096
7 p.
|
artikel
|
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