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                                       Details for article 12 of 51 found articles
 
 
  Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure
 
 
Title: Electrical characterization of high-k gate dielectrics fabricated using plasma oxidation and post-deposition annealing of a Hf/SiO2/Si structure
Author: Sugimoto, Youhei
Adachi, Hideto
Yamamoto, Keisuke
Wang, Dong
Nakashima, Hideharu
Nakashima, Hiroshi
Appeared in: Materials science in semiconductor processing
Paging: Volume 9 (2006) nr. 6 pages 6 p.
Year: 2006
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 51 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands