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                             42 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Advanced materials for microelectronics: ferroelectric and low-k dielectrics Fragalà, I.
2002
5 2-3 p. 63-
1 p.
artikel
2 Anisotropic deposition of copper by H-assisted plasma chemical vapor deposition Takenaka, Kosuke
2002
5 2-3 p. 301-304
4 p.
artikel
3 Applications and issues for ferroelectric NVMs Zambrano, Raffaele
2002
5 2-3 p. 305-310
6 p.
artikel
4 Ba0.7Sr0.3TiO3 powders with B2O3 additive prepared by the sol–gel method for use as microwave material Hu, T.
2002
5 2-3 p. 215-221
7 p.
artikel
5 CARL–advantages of thin-film imaging for leading-edge lithography Richter, E.
2002
5 2-3 p. 291-299
9 p.
artikel
6 Characterization of low-k porous silica films incorporated with alkylene groups Uchida, Y.
2002
5 2-3 p. 259-264
6 p.
artikel
7 Characterization of pulsed laser deposited Ba0.6Sr0.4TiO3 on Pt-coated silicon substrates Goux, L
2002
5 2-3 p. 189-194
6 p.
artikel
8 Chemical solution deposition of PZT thin films for microelectronics Kosec, M
2002
5 2-3 p. 97-103
7 p.
artikel
9 Control of the Ti diffusion in Pt/Ti bottom electrodes for the fabrication of PZT thin film transducers Millon, C.
2002
5 2-3 p. 243-247
5 p.
artikel
10 Effect of grain size on the electrical properties of (Pb0.72La0.28)Ti0.93O3 thin films grown by pulsed laser deposition Han, Kyoung Bo
2002
5 2-3 p. 249-252
4 p.
artikel
11 Effect of substitution of Ti by Zr in BaTiO3 thin films grown by MOCVD Pantou, R
2002
5 2-3 p. 237-241
5 p.
artikel
12 Effect of substrates on epitaxial PZT films by a coating photolysis process Tsuchiya, T
2002
5 2-3 p. 207-210
4 p.
artikel
13 Electrical properties of low-dielectric-constant films prepared by PECVD in O2/CH4/HMDSO Borvon, G
2002
5 2-3 p. 279-284
6 p.
artikel
14 Evidence for PT-ferroelectrics interface scenario of different fatigue behaviors between Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin film capacitors Chu, M.W.
2002
5 2-3 p. 179-182
4 p.
artikel
15 Fabrication and characterization of PZT-PMWSN thin film using pulsed laser deposition Kim, Cheol Su
2002
5 2-3 p. 93-96
4 p.
artikel
16 Ferroelectric thin and thick films for microsystems Whatmore, R.W.
2002
5 2-3 p. 65-76
12 p.
artikel
17 First-principles calculations of perovskite thin films Eglitis, R.I.
2002
5 2-3 p. 129-134
6 p.
artikel
18 Fundamentals in ferroelectric transition of TGS Alexandru, H.V.
2002
5 2-3 p. 159-165
7 p.
artikel
19 Homogeneous and heterogeneous reactions in the decomposition of precursors for the MOCVD of high-k and ferroelectric films Condorelli, G.G.
2002
5 2-3 p. 135-139
5 p.
artikel
20 IFC-ED board 2002
5 2-3 p. IFC-
1 p.
artikel
21 Influence of growth parameters on properties of electroceramic thin films grown via MO-CVD Padeletti, G.
2002
5 2-3 p. 105-114
10 p.
artikel
22 Integration of high dielectric Ba0.5Sr0.5TiO3 films into amorphous TaSiN barrier layer structures Wenger, Ch.
2002
5 2-3 p. 233-236
4 p.
artikel
23 Large-scale modelling of the phase transitions in KTa1−x Nb x O3 perovskite solid solutions Eglitis, R.I.
2002
5 2-3 p. 153-157
5 p.
artikel
24 Low-temperature growth of RuO2 films for conductive electrode applications Fröhlich, K.
2002
5 2-3 p. 173-177
5 p.
artikel
25 Low temperature preparation of piezoelectric thin films by ultraviolet-assisted rapid thermal processing Pardo, L.
2002
5 2-3 p. 77-83
7 p.
artikel
26 MOCVD for complex multicomponent thin films—a leading edge technology for next generation devices Schumacher, M.
2002
5 2-3 p. 85-91
7 p.
artikel
27 Non-destructive characterization of strontium bismuth tantalate films Petrik, P
2002
5 2-3 p. 141-145
5 p.
artikel
28 Phase transformation and paired-plate precipitate formation in Pb0.91La0.09Zr0.65Ti0.35O3 films grown on sapphire substrates Tunaboylu, B.
2002
5 2-3 p. 199-206
8 p.
artikel
29 Piezoelectric and electrical properties of PZT-PSN thin film ceramics for MEMS applications Kim, Seong Kon
2002
5 2-3 p. 115-121
7 p.
artikel
30 Piezoelectric properties of sputtered PZT films: influence of structure, micro structure, film thickness (Zr,Ti) ratio and Nb substitution Remiens, D.
2002
5 2-3 p. 123-127
5 p.
artikel
31 Positive temperature coefficient of resistivity in thin films of barium titanate Syrtsov, S.R.
2002
5 2-3 p. 223-225
3 p.
artikel
32 Precursor mutual interactions in the kinetics of MOCVD of SBT films Condorelli, G.G.
2002
5 2-3 p. 167-171
5 p.
artikel
33 Properties of ZrO2 thin films prepared by laser ablation Vrejoiu, I.
2002
5 2-3 p. 253-257
5 p.
artikel
34 PTFE nanoemulsions as ultralow-k dielectric materials Machetta, P.
2002
5 2-3 p. 285-290
6 p.
artikel
35 Publisher's Note 2002
5 2-3 p. vii-
1 p.
artikel
36 Pulsed laser deposition of PMN thin films Craciun, F.
2002
5 2-3 p. 227-232
6 p.
artikel
37 Routes for the integration of high and low dielectric constant oxides on InP Vasco, E.
2002
5 2-3 p. 183-187
5 p.
artikel
38 Strategies for ultralow-κ dielectrics for integrated-circuit interconnects Cerofolini, G.F.
2002
5 2-3 p. 265-270
6 p.
artikel
39 Structural changes of fluorinated amorphous carbon films by nitrogen incorporation Valentini, L.
2002
5 2-3 p. 271-277
7 p.
artikel
40 Structure of BaTiO3 thin films modified by film–substrate interaction Nair, Jaya P.
2002
5 2-3 p. 195-197
3 p.
artikel
41 The effect of annealing on the 0.5% Ce-doped Ba(Zr x Ti1−x )O3 (BZT) thin films deposited by RF magnetron sputtering system Choi, Won Seok
2002
5 2-3 p. 211-214
4 p.
artikel
42 The effects of baking cycles on the properties of ferroelectric thin films Watts, B.E
2002
5 2-3 p. 147-152
6 p.
artikel
                             42 gevonden resultaten
 
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