| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Ab initio methods as an integral part of microelectronic materials modeling: status and perspectives
|
Wimmer, E.
|
|
2000
|
3 |
1-2 |
p. 3-11
|
artikel
|
| 2 |
Alloy corrections to the virtual crystal approximation and explicit band structure calculations for silicon-germanium
|
Fahy, S
|
|
2000
|
3 |
1-2 |
p. 109-114
|
artikel
|
| 3 |
A temperature dependent model for the saturation velocity in semiconductor materials
|
Quay, R
|
|
2000
|
3 |
1-2 |
p. 149-155
|
artikel
|
| 4 |
Atomic level modeling of boron diffusion through silicon oxide before and after plasma nitridation
|
Zubkov, V.
|
|
2000
|
3 |
1-2 |
p. 41-45
|
artikel
|
| 5 |
Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia
|
Bagatur’yants, A.A
|
|
2000
|
3 |
1-2 |
p. 23-29
|
artikel
|
| 6 |
Cluster ion implantation: a molecular dynamics study
|
Ihara, Sigeo
|
|
2000
|
3 |
1-2 |
p. 91-95
|
artikel
|
| 7 |
Comparison of 3C–SiC, 6H–SiC and 4H–SiC MESFETs performances
|
Codreanu, C.
|
|
2000
|
3 |
1-2 |
p. 137-142
|
artikel
|
| 8 |
Depth profiles obtained from simulation of GaAs bombarded with noble gas ions using MARLOWE
|
Swart, M
|
|
2000
|
3 |
1-2 |
p. 97-101
|
artikel
|
| 9 |
Electronic structure of SnO2 (110) surface
|
Rantala, Tapio T
|
|
2000
|
3 |
1-2 |
p. 103-107
|
artikel
|
| 10 |
1999 E-MRS Spring Meeting Symposium L: Ab Initio Approaches to Microelectronics Materials and Process Modelling
|
Greer, Jim
|
|
2000
|
3 |
1-2 |
p. 1
|
artikel
|
| 11 |
Enhanced semi-empirical potentials in molecular dynamics simulations of wafer bonding
|
Scheerschmidt, K
|
|
2000
|
3 |
1-2 |
p. 129-135
|
artikel
|
| 12 |
First principles calculations of hydrogen annealed amorphous SiO2 structures and Si/SiO2 interface for non volatile memories
|
Courtot-Descharles, A
|
|
2000
|
3 |
1-2 |
p. 143-148
|
artikel
|
| 13 |
Integration of reactive process modeling into semiconductor technology development
|
Egan, E.W
|
|
2000
|
3 |
1-2 |
p. 13-22
|
artikel
|
| 14 |
Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data
|
Jaraiz, M
|
|
2000
|
3 |
1-2 |
p. 59-63
|
artikel
|
| 15 |
Modeling of copper–carbon solid solutions
|
Ellis, D.E
|
|
2000
|
3 |
1-2 |
p. 123-127
|
artikel
|
| 16 |
Modeling of SiGe deposition using quantum chemistry techniques for detailed kinetic analysis
|
Hierlemann, M.
|
|
2000
|
3 |
1-2 |
p. 31-39
|
artikel
|
| 17 |
Modeling of the silicon (100) thermal oxidation: from quantum to macroscopic formulation
|
Esteve, A
|
|
2000
|
3 |
1-2 |
p. 47-57
|
artikel
|
| 18 |
On the mechanism of chemical vapor deposition of Ta2O5 from TaCl5 and H2O. An ab initio study of gas phase reactions
|
Siodmiak, M
|
|
2000
|
3 |
1-2 |
p. 65-70
|
artikel
|
| 19 |
Oxidation mechanism of fluorocarbon-incorporated silica for interlayer dielectric materials
|
Sugahara, Satoshi
|
|
2000
|
3 |
1-2 |
p. 79-84
|
artikel
|
| 20 |
Segregation of phosphorus to SiO2/Si(001) interfaces
|
Dąbrowski, J
|
|
2000
|
3 |
1-2 |
p. 85-89
|
artikel
|
| 21 |
Structure and vibrational frequencies of di- and monomethyl aluminum, zinc, and boron derivatives on a chemically modified SiO2 surface
|
Bagatur’yants, A.A
|
|
2000
|
3 |
1-2 |
p. 71-77
|
artikel
|
| 22 |
The dopant fields in “uniform-diffusion-layer”, “global-thermal-convection” and “precrystallization-zone” models
|
Balint, A.M
|
|
2000
|
3 |
1-2 |
p. 115-121
|
artikel
|
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