| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A doublet of 3 in. cylindrical silicon drift detectors in the CERES experiment
|
Faschingbauer, U.
|
|
1996
|
377 |
2-3 |
p. 362-366
5 p.
|
artikel
|
| 2 |
A 55 em2 cylindrical silicon drift detector
|
Holl, P.
|
|
1996
|
377 |
2-3 |
p. 367-374
8 p.
|
artikel
|
| 3 |
Analysis of trapping effects on charge transfer in proton irradiated pn-CCDs
|
Meidinger, Norbert
|
|
1996
|
377 |
2-3 |
p. 298-311
14 p.
|
artikel
|
| 4 |
A new silicon drift detector with reduced lateral diffusion
|
Castoldi, A.
|
|
1996
|
377 |
2-3 |
p. 375-380
6 p.
|
artikel
|
| 5 |
A transimpedance amplifier using a novel current mode feedback loop
|
Jarron, Pierre
|
|
1996
|
377 |
2-3 |
p. 435-439
5 p.
|
artikel
|
| 6 |
Back-illuminated CCDs made by gas immersion laser doping
|
van den Berg, M.L.
|
|
1996
|
377 |
2-3 |
p. 312-319
8 p.
|
artikel
|
| 7 |
CASTOR a VLSI CMOS mixed analog—digital circuit for low noise multichannel counting applications
|
Comes, G.
|
|
1996
|
377 |
2-3 |
p. 440-445
6 p.
|
artikel
|
| 8 |
Conference summary
|
Damerell, C.J.S.
|
|
1996
|
377 |
2-3 |
p. 539-546
8 p.
|
artikel
|
| 9 |
Damage-induced surface effects in silicon detectors
|
Wunstorf, R.
|
|
1996
|
377 |
2-3 |
p. 290-297
8 p.
|
artikel
|
| 10 |
DC and noise performance of C-HFET transistors at low drain current densities
|
Karpinski, W.
|
|
1996
|
377 |
2-3 |
p. 465-469
5 p.
|
artikel
|
| 11 |
Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stress
|
Füssel, W.
|
|
1996
|
377 |
2-3 |
p. 177-183
7 p.
|
artikel
|
| 12 |
Detection properties of LEC SI GaAs radiation detectors with the symmetrical contact configuration
|
Dubecký, F.
|
|
1996
|
377 |
2-3 |
p. 475-478
4 p.
|
artikel
|
| 13 |
Detector calibration at the PTB radiometry laboratory at BESSY
|
Rabus, H.
|
|
1996
|
377 |
2-3 |
p. 209-216
8 p.
|
artikel
|
| 14 |
Development of large linear silicon drift detectors for the STAR experiment at RHIC
|
Bellwied, R.
|
|
1996
|
377 |
2-3 |
p. 387-392
6 p.
|
artikel
|
| 15 |
Double-sided “radiation resistant” microstrip detectors: Technology and results
|
Tonelli, G.
|
|
1996
|
377 |
2-3 |
p. 422-428
7 p.
|
artikel
|
| 16 |
Effects of deep level defects in semiconductor detectors
|
Lutz, G.
|
|
1996
|
377 |
2-3 |
p. 234-243
10 p.
|
artikel
|
| 17 |
Fabrication of large-area CCD detectors on high-purity, float-zone silicon
|
Gregory, J.A.
|
|
1996
|
377 |
2-3 |
p. 325-333
9 p.
|
artikel
|
| 18 |
Fast tools for 3-D design problems in semiconductor detectors
|
Castoldi, A.
|
|
1996
|
377 |
2-3 |
p. 381-386
6 p.
|
artikel
|
| 19 |
“Gate-to-gate” BJT obtained from the double-gate input JFET to reset charge preamplifiers
|
Fazzi, Alberto
|
|
1996
|
377 |
2-3 |
p. 453-458
6 p.
|
artikel
|
| 20 |
Improving CdZnTe X-ray detector performance by cooling and rise time discrimination
|
Niemelä, A.
|
|
1996
|
377 |
2-3 |
p. 484-486
3 p.
|
artikel
|
| 21 |
Intensified CCDs as position sensitive neutron detectors
|
Dietze, M.
|
|
1996
|
377 |
2-3 |
p. 320-324
5 p.
|
artikel
|
| 22 |
Investigation on the N eff reverse annealing effect using TSC/I-DLTS: Relationship between neutron induced microscopic defects and silicon detector electrical degradations
|
Li, Z.
|
|
1996
|
377 |
2-3 |
p. 265-275
11 p.
|
artikel
|
| 23 |
Investigations of donor and acceptor removal and long term annealing in silicon with different boron/phosphorus ratios
|
Wunstorf, R.
|
|
1996
|
377 |
2-3 |
p. 228-233
6 p.
|
artikel
|
| 24 |
Irradiation tests of double-sided silicon strip detectors optimized for the ATLAS-inner-detector-region
|
Gößling, C.
|
|
1996
|
377 |
2-3 |
p. 284-289
6 p.
|
artikel
|
| 25 |
Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pions
|
Feick, H.
|
|
1996
|
377 |
2-3 |
p. 217-223
7 p.
|
artikel
|
| 26 |
Low energy response of silicon pn-junction detector
|
Hartmann, R.
|
|
1996
|
377 |
2-3 |
p. 191-196
6 p.
|
artikel
|
| 27 |
Low noise gamma-ray and X-ray detectors based on CdTe-materials
|
Åbro, E.
|
|
1996
|
377 |
2-3 |
p. 470-474
5 p.
|
artikel
|
| 28 |
Material properties and room-temperature nuclear detector response of wide bandgap semiconductors
|
Schieber, M.
|
|
1996
|
377 |
2-3 |
p. 492-495
4 p.
|
artikel
|
| 29 |
Modeling and characterization of a radiation sensitive p-channel transistor in a floating n-well
|
Erlebach, A.
|
|
1996
|
377 |
2-3 |
p. 446-452
7 p.
|
artikel
|
| 30 |
Modelling the effects of electrical traps in radiation detectors
|
Kandiah, K.
|
|
1996
|
377 |
2-3 |
p. 197-205
9 p.
|
artikel
|
| 31 |
Neutron induced defects in silicon detectors characterized by DLTS and TSC methods
|
Fretwurst, E.
|
|
1996
|
377 |
2-3 |
p. 258-264
7 p.
|
artikel
|
| 32 |
New developments in the field of silicon detectors for digital radiology
|
Arfelli, F.
|
|
1996
|
377 |
2-3 |
p. 508-513
6 p.
|
artikel
|
| 33 |
New pixel detector concepts based on junction field effect transistors on high resistivity silicon
|
Cesura, G.
|
|
1996
|
377 |
2-3 |
p. 521-528
8 p.
|
artikel
|
| 34 |
Pair creation energy and Fano factor of silicon in the energy range of soft X-rays
|
Lechner, P.
|
|
1996
|
377 |
2-3 |
p. 206-208
3 p.
|
artikel
|
| 35 |
Performance of a coaxial geometry Cd1−x Zn x Te detector
|
Lund, J.C.
|
|
1996
|
377 |
2-3 |
p. 479-483
5 p.
|
artikel
|
| 36 |
Performance of large area proximity focused hybrid photo-diodes
|
Calvi, M.
|
|
1996
|
377 |
2-3 |
p. 536-538
3 p.
|
artikel
|
| 37 |
Performance of the pn-CCD X-ray detector system designed for the XMM satellite mission
|
Soltau, H.
|
|
1996
|
377 |
2-3 |
p. 340-345
6 p.
|
artikel
|
| 38 |
Photoconductors for 200–400 μm: Choices and challenges
|
Haegel, Nancy M.
|
|
1996
|
377 |
2-3 |
p. 501-507
7 p.
|
artikel
|
| 39 |
Pion and proton induced radiation damage to silicon detectors
|
Riechmann, K.
|
|
1996
|
377 |
2-3 |
p. 276-283
8 p.
|
artikel
|
| 40 |
Process- and irradiation-induced defects in silicon devices
|
Claeys, C.
|
|
1996
|
377 |
2-3 |
p. 244-257
14 p.
|
artikel
|
| 41 |
P-type silicon drift detectors
|
Walton, J.T.
|
|
1996
|
377 |
2-3 |
p. 357-361
5 p.
|
artikel
|
| 42 |
Radiation hardness of punch-through and FET biased silicon microstrip detectors
|
Westgaard, Trond I.
|
|
1996
|
377 |
2-3 |
p. 429-434
6 p.
|
artikel
|
| 43 |
Readout of a Si strip detector with 200 μm pitch
|
Chochula, P.
|
|
1996
|
377 |
2-3 |
p. 409-411
3 p.
|
artikel
|
| 44 |
Recent progress in Cd1−x Zn x Te radiation detectors
|
Parnham, Kevin B.
|
|
1996
|
377 |
2-3 |
p. 487-491
5 p.
|
artikel
|
| 45 |
Recombination of nonequilibrium charge carriers in heavy ion tracks in silicon
|
Eremin, V.K.
|
|
1996
|
377 |
2-3 |
p. 184-190
7 p.
|
artikel
|
| 46 |
Signal processing in the front-end electronics of BaBar vertex detector
|
Becker, R.
|
|
1996
|
377 |
2-3 |
p. 459-464
6 p.
|
artikel
|
| 47 |
Silicon drift detectors for high resolution room temperature X-ray spectroscopy
|
Lechner, Peter
|
|
1996
|
377 |
2-3 |
p. 346-351
6 p.
|
artikel
|
| 48 |
Silicon drift detector; studies about geometry of electrodes and production technology
|
Beolè, S.
|
|
1996
|
377 |
2-3 |
p. 393-396
4 p.
|
artikel
|
| 49 |
Silicon drift detector with integrated p-JFET for continuous discharge of collected electrons through the gate junction
|
Bertuccio, G.
|
|
1996
|
377 |
2-3 |
p. 352-356
5 p.
|
artikel
|
| 50 |
Strip detector design for ATLAS and HERA-B using two-dimensional device simulation
|
Richter, R.H.
|
|
1996
|
377 |
2-3 |
p. 412-421
10 p.
|
artikel
|
| 51 |
Studies on a 300 k pixel detector telescope
|
Middelkamp, Peter
|
|
1996
|
377 |
2-3 |
p. 532-535
4 p.
|
artikel
|
| 52 |
The application of high energy ion implantation for silicon radiation detectors
|
von Borany, J.
|
|
1996
|
377 |
2-3 |
p. 514-520
7 p.
|
artikel
|
| 53 |
The effect of metal field plates on multiguard structures with floating p+ guard rings
|
Avset, Berit Sundby
|
|
1996
|
377 |
2-3 |
p. 397-403
7 p.
|
artikel
|
| 54 |
The effect of radiation induced defects on the performance of high resistivity silicon diodes
|
Matheson, J.
|
|
1996
|
377 |
2-3 |
p. 224-227
4 p.
|
artikel
|
| 55 |
Thermal imaging camera with linear Pb1−x Sn x Se-on-Si infrared sensor array and combined JFET/CMOS read-out electronics
|
Masek, J.
|
|
1996
|
377 |
2-3 |
p. 496-500
5 p.
|
artikel
|
| 56 |
Transparent silicon strip sensors for the optical alignment of particle detector systems
|
Blum, W.
|
|
1996
|
377 |
2-3 |
p. 404-408
5 p.
|
artikel
|
| 57 |
X-ray polarimetry — A novel application of CCDs
|
Bögner, M.
|
|
1996
|
377 |
2-3 |
p. 529-531
3 p.
|
artikel
|
| 58 |
X-ray spectroscopy using MOS CCDs
|
Holland, A.D.
|
|
1996
|
377 |
2-3 |
p. 334-339
6 p.
|
artikel
|
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