| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
A broad-beam, high-current metal-ion implantation facility
|
Brown, I.G.
|
|
1991
|
55 |
1-4 |
p. 506-510
5 p.
|
artikel
|
| 2 |
A cold-hollow-cathode lateral-extraction penning ion source
|
Ma, M.
|
|
1991
|
55 |
1-4 |
p. 335-338
4 p.
|
artikel
|
| 3 |
Activation of shallow implants in Si by pulse laser irradiation
|
Wesch, W.
|
|
1991
|
55 |
1-4 |
p. 625-629
5 p.
|
artikel
|
| 4 |
A detailed study of elemental contamination in a Varian 180XP high-current implanter
|
Taylor, M.C.
|
|
1991
|
55 |
1-4 |
p. 20-24
5 p.
|
artikel
|
| 5 |
A dual source low-energy ion implantation system for use in silicon molecular beam epitaxy
|
Gottdang, A.
|
|
1991
|
55 |
1-4 |
p. 310-313
4 p.
|
artikel
|
| 6 |
Advances in the Extrion 1000 and XP Series high-current ion implantation systems
|
Harris, M.
|
|
1991
|
55 |
1-4 |
p. 428-433
6 p.
|
artikel
|
| 7 |
A high-current ion implanter system
|
Nasser-Ghodsi, M.
|
|
1991
|
55 |
1-4 |
p. 398-407
10 p.
|
artikel
|
| 8 |
A high-current low-energy multi-ion beam deposition system
|
Tsukakoshi, Osamu
|
|
1991
|
55 |
1-4 |
p. 355-358
4 p.
|
artikel
|
| 9 |
A high-resolution beam profile measuring system for high-current ion implanters
|
Fujishita, N.
|
|
1991
|
55 |
1-4 |
p. 90-93
4 p.
|
artikel
|
| 10 |
A 500 keV ion accelerator with two types of ion source
|
Agawa, Y.
|
|
1991
|
55 |
1-4 |
p. 502-505
4 p.
|
artikel
|
| 11 |
A low-energy fast-atom beam source
|
Gorbatov, Yu.B.
|
|
1991
|
55 |
1-4 |
p. 328-330
3 p.
|
artikel
|
| 12 |
A micro-uniformity test structure
|
Keenan, W.A.
|
|
1991
|
55 |
1-4 |
p. 166-172
7 p.
|
artikel
|
| 13 |
Amorphisation and solid phase epitaxial regrowth of the silicon overlayer in SIMOX structures
|
Starkov, V.V.
|
|
1991
|
55 |
1-4 |
p. 701-704
4 p.
|
artikel
|
| 14 |
Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties
|
Poate, J.M.
|
|
1991
|
55 |
1-4 |
p. 533-543
11 p.
|
artikel
|
| 15 |
An analysis of vacuum effects on ion implanter performance
|
Renau, A.
|
|
1991
|
55 |
1-4 |
p. 61-65
5 p.
|
artikel
|
| 16 |
An electron-beam charge neutralization system for ion implanters
|
Leung, K.N.
|
|
1991
|
55 |
1-4 |
p. 94-96
3 p.
|
artikel
|
| 17 |
A new method to calculate range and damage distributions by direct numerical solution of Boltzmann transport equations
|
Posselt, M.
|
|
1991
|
55 |
1-4 |
p. 676-680
5 p.
|
artikel
|
| 18 |
An increased implant current by combining a long-slit microwave ion source with a converging lens
|
Sakudo, N.
|
|
1991
|
55 |
1-4 |
p. 300-304
5 p.
|
artikel
|
| 19 |
An investigation of Si0.5Ge0.5 alloy oxidation by high dose oxygen implantation
|
Castle, J.E.
|
|
1991
|
55 |
1-4 |
p. 697-700
4 p.
|
artikel
|
| 20 |
Annealing behavior of dislocation loops near the projected ion range in high-dose As+- and P+-implanted (001) Si
|
Hsu, S.N.
|
|
1991
|
55 |
1-4 |
p. 620-624
5 p.
|
artikel
|
| 21 |
Annealing behaviors of residual defects in high-dose BF+ 2-implanted (001)Si under different implantation conditions
|
Chu, C.H.
|
|
1991
|
55 |
1-4 |
p. 193-197
5 p.
|
artikel
|
| 22 |
Annealing behaviour of BF2 + implanted (001) and (111) Si inside miniature size oxide openings
|
Nieh, C.W.
|
|
1991
|
55 |
1-4 |
p. 831-835
5 p.
|
artikel
|
| 23 |
Anomalous redistributions of As and Sb atoms in As-implanted Sb-doped Si and Sb-implanted As-doped Si during annealing
|
Yokota, Katsuhiro
|
|
1991
|
55 |
1-4 |
p. 633-636
4 p.
|
artikel
|
| 24 |
A plasma immersion ion implantation reactor for ULSI fabrication
|
Qian, X.Y.
|
|
1991
|
55 |
1-4 |
p. 884-887
4 p.
|
artikel
|
| 25 |
Application of ion implantation in submicron CMOS processes
|
Küsters, K.H.
|
|
1991
|
55 |
1-4 |
p. 9-16
8 p.
|
artikel
|
| 26 |
A RGA study of the cross-contamination of dopant species and low level impurities and the use of the RGA as a process monitor in a Varian 180XP
|
Cummings, James J.
|
|
1991
|
55 |
1-4 |
p. 55-60
6 p.
|
artikel
|
| 27 |
A silicon MBE-compatible low-energy ion implanter
|
Gordon, J.S.
|
|
1991
|
55 |
1-4 |
p. 314-317
4 p.
|
artikel
|
| 28 |
A survey of implant particulate process control and yield effects
|
Larson, L.A.
|
|
1991
|
55 |
1-4 |
p. 132-136
5 p.
|
artikel
|
| 29 |
A system and performance overview of the EXTRION 220 medium-current ion implanter
|
Pippins, Michael W.
|
|
1991
|
55 |
1-4 |
p. 423-427
5 p.
|
artikel
|
| 30 |
A system for complex processing of semiconductor structures in vacuum
|
Yankelevich, E.B.
|
|
1991
|
55 |
1-4 |
p. 880-883
4 p.
|
artikel
|
| 31 |
A universal sample manipulator with 50 kV negative bias
|
Kenny, M.J.
|
|
1991
|
55 |
1-4 |
p. 522-526
5 p.
|
artikel
|
| 32 |
Author index
|
|
|
1991
|
55 |
1-4 |
p. 905-920
16 p.
|
artikel
|
| 33 |
A versatile ion implanter for planar and 3D device construction
|
Dykstra, Jerald P.
|
|
1991
|
55 |
1-4 |
p. 478-481
4 p.
|
artikel
|
| 34 |
A versatile WIBS 200 kV ion implanter for materials modification
|
Bond, P.
|
|
1991
|
55 |
1-4 |
p. 511-516
6 p.
|
artikel
|
| 35 |
Beam incidence variations in spinning disk ion implanters
|
Ray, Andy M.
|
|
1991
|
55 |
1-4 |
p. 488-492
5 p.
|
artikel
|
| 36 |
Beam optics research for a 600 keV heavy ion implanter
|
Qihua, Zhao
|
|
1991
|
55 |
1-4 |
p. 374-378
5 p.
|
artikel
|
| 37 |
BF+ 2 implantation in predamaged Si with Ge+ or Si+ at doses lower than amorphization
|
Kase, Masataka
|
|
1991
|
55 |
1-4 |
p. 550-554
5 p.
|
artikel
|
| 38 |
Buried insulator formation by nitrogen implantation at elevated temperatures
|
Hatzopoulos, N.
|
|
1991
|
55 |
1-4 |
p. 734-737
4 p.
|
artikel
|
| 39 |
Calculation of channeling effects in ion implantation
|
Bausells, J.
|
|
1991
|
55 |
1-4 |
p. 666-670
5 p.
|
artikel
|
| 40 |
Centers of spin-dependent recombination in structures formed by N+ ion implantation into Si
|
Karanovich, A.A.
|
|
1991
|
55 |
1-4 |
p. 630-632
3 p.
|
artikel
|
| 41 |
Channeling contrast analysis of local damage distributions induced by maskless implantation
|
Kinomura, A.
|
|
1991
|
55 |
1-4 |
p. 866-869
4 p.
|
artikel
|
| 42 |
Channeling control for large tilt angle implantation in Si 〈100〉
|
Simonton, Robert B.
|
|
1991
|
55 |
1-4 |
p. 39-44
6 p.
|
artikel
|
| 43 |
Channeling implantation of B and P in silicon
|
Schreutelkamp, R.J.
|
|
1991
|
55 |
1-4 |
p. 615-619
5 p.
|
artikel
|
| 44 |
Channeling implants of boron in silicon
|
Raineri, V.
|
|
1991
|
55 |
1-4 |
p. 661-665
5 p.
|
artikel
|
| 45 |
Characterization of Si-implanted gallium antimonide
|
Su, Y.K.
|
|
1991
|
55 |
1-4 |
p. 794-797
4 p.
|
artikel
|
| 46 |
Charge neutralisation in the PI9000 series implanters
|
Wauk, M.T.
|
|
1991
|
55 |
1-4 |
p. 413-416
4 p.
|
artikel
|
| 47 |
Charging measurement and control in high-current implanters
|
Angel, Gordon
|
|
1991
|
55 |
1-4 |
p. 211-215
5 p.
|
artikel
|
| 48 |
Charging studies with “CHARM”
|
Lukaszek, W.
|
|
1991
|
55 |
1-4 |
p. 143-147
5 p.
|
artikel
|
| 49 |
Cobalt silicide formation caused by arsenic ion beam mixing and rapid thermal annealing
|
Ye, Min
|
|
1991
|
55 |
1-4 |
p. 773-777
5 p.
|
artikel
|
| 50 |
Comparison of models for the calculation of ion implantation moments of implanted boron, phosphorus and arsenic dopants in thin film silicides
|
Cole, P.D.
|
|
1991
|
55 |
1-4 |
p. 763-768
6 p.
|
artikel
|
| 51 |
Comparison of modern uniformity-mapping techniques
|
Keenan, W.A.
|
|
1991
|
55 |
1-4 |
p. 230-234
5 p.
|
artikel
|
| 52 |
Computer modelling for ion-beam system design
|
Ito, Hiroyuki
|
|
1991
|
55 |
1-4 |
p. 527-532
6 p.
|
artikel
|
| 53 |
Conformal implantation for trench doping with plasma immersion ion implantation
|
Qian, X.Y.
|
|
1991
|
55 |
1-4 |
p. 898-901
4 p.
|
artikel
|
| 54 |
Contouring of SIMOX profiles by oxygen ion energy change
|
Wittkower, A.
|
|
1991
|
55 |
1-4 |
p. 842-846
5 p.
|
artikel
|
| 55 |
Control of BF2 dissociation in high-current ion implantation
|
Downey, Daniel F.
|
|
1991
|
55 |
1-4 |
p. 49-54
6 p.
|
artikel
|
| 56 |
Control of ion beam current density and profile for high current ion implantation systems
|
Tanjyo, Masayasu
|
|
1991
|
55 |
1-4 |
p. 86-89
4 p.
|
artikel
|
| 57 |
Control of metal contamination in the Varian Extrion 1000 ion implantation system
|
Liebert, Reuel B.
|
|
1991
|
55 |
1-4 |
p. 71-76
6 p.
|
artikel
|
| 58 |
Control of wafer charging on the Varian EXTRION 1000 ion implanter
|
Satoh, Shu
|
|
1991
|
55 |
1-4 |
p. 77-81
5 p.
|
artikel
|
| 59 |
Custom profiles by automated multi-step implantation
|
Crook, J.Philip
|
|
1991
|
55 |
1-4 |
p. 593-597
5 p.
|
artikel
|
| 60 |
Daily 2 × 1012 monitoring of an ion implanter
|
Cherekdjian, S.
|
|
1991
|
55 |
1-4 |
p. 178-182
5 p.
|
artikel
|
| 61 |
Defect production in ion implanted GaAs, GaP and InP
|
Wendler, E.
|
|
1991
|
55 |
1-4 |
p. 789-793
5 p.
|
artikel
|
| 62 |
Development of a four-electrode extraction system for a large area ion source with a wide range of operational conditions
|
Maeno, Shuichi
|
|
1991
|
55 |
1-4 |
p. 359-363
5 p.
|
artikel
|
| 63 |
Development of a high current and high energy metal ion beam system
|
Inami, H.
|
|
1991
|
55 |
1-4 |
p. 370-373
4 p.
|
artikel
|
| 64 |
Development of a process to achieve residue-free photoresist removal after high-dose ion implantation
|
McOmber, Janice I.
|
|
1991
|
55 |
1-4 |
p. 281-286
6 p.
|
artikel
|
| 65 |
Development of ion implantation equipment in the USSR
|
Vyatkin, A.F.
|
|
1991
|
55 |
1-4 |
p. 386-392
7 p.
|
artikel
|
| 66 |
Device charge-to-breakdown studies on a high-current implanter
|
Felch, S.B.
|
|
1991
|
55 |
1-4 |
p. 82-85
4 p.
|
artikel
|
| 67 |
Direct extraction of a Na− beam from a sodium plasma
|
Sasao, Mamiko
|
|
1991
|
55 |
1-4 |
p. 318-322
5 p.
|
artikel
|
| 68 |
Distribution of paramagnetic defects formed in silicon by MeV ion implantations
|
Yajima, Y.
|
|
1991
|
55 |
1-4 |
p. 607-610
4 p.
|
artikel
|
| 69 |
Dose dependence of crystallinity and resistivity in ion beam synthesised CoSi2 layers
|
Spraggs, R.S.
|
|
1991
|
55 |
1-4 |
p. 836-841
6 p.
|
artikel
|
| 70 |
Double hollow cathode ion source for metal ion-beam production
|
Tonegawa, Akira
|
|
1991
|
55 |
1-4 |
p. 331-334
4 p.
|
artikel
|
| 71 |
Editorial
|
Stephens, K.G.
|
|
1991
|
55 |
1-4 |
p. vii-
1 p.
|
artikel
|
| 72 |
Editorial Board
|
|
|
1991
|
55 |
1-4 |
p. ii-iii
nvt p.
|
artikel
|
| 73 |
Effect of deposition temperature of arsenic implanted poly-Si-on-insulator on grain size and residual stress
|
Takai, M.
|
|
1991
|
55 |
1-4 |
p. 870-872
3 p.
|
artikel
|
| 74 |
Effect of SiNx coating in lateral solid phase epitaxy of implanted amorphous Si films
|
Ishiwara, Hiroshi
|
|
1991
|
55 |
1-4 |
p. 585-588
4 p.
|
artikel
|
| 75 |
Effects of molybdenum contamination resulting from BF2 implantation
|
Cubina, Alfredo
|
|
1991
|
55 |
1-4 |
p. 160-165
6 p.
|
artikel
|
| 76 |
Effects of P+-implanted poly-Si electrodes on the gate dielectric characteristics of thin oxides
|
Cheng, Huang-Chung
|
|
1991
|
55 |
1-4 |
p. 216-219
4 p.
|
artikel
|
| 77 |
Electrical activation process of erbium implanted in silicon and SIMOX
|
Tang, Y.S.
|
|
1991
|
55 |
1-4 |
p. 647-649
3 p.
|
artikel
|
| 78 |
Energetic neutral contamination in modern high-current implanters
|
Cherekdjian, S.
|
|
1991
|
55 |
1-4 |
p. 30-34
5 p.
|
artikel
|
| 79 |
Energy and dose dependence of silicon top layer and buried oxide layer thicknesses in SIMOX substrates
|
Bussmamnn, U.
|
|
1991
|
55 |
1-4 |
p. 852-855
4 p.
|
artikel
|
| 80 |
Energy contamination in ion implantation
|
van Herk, J.
|
|
1991
|
55 |
1-4 |
p. 25-29
5 p.
|
artikel
|
| 81 |
Energy contamination of P2+ ion beams on the Varian, EXTRION 220 medium current implanter
|
van der Meulen, P.F.H.M.
|
|
1991
|
55 |
1-4 |
p. 45-48
4 p.
|
artikel
|
| 82 |
Epitaxial growth of carbon-doped p-type GaAs films by ionized cluster beam
|
Takaoka, Gikan H.
|
|
1991
|
55 |
1-4 |
p. 873-875
3 p.
|
artikel
|
| 83 |
Epitaxial regrowth and lattice location of indium implanted in arsenic-preamorphized silicon
|
Alves, E.
|
|
1991
|
55 |
1-4 |
p. 580-584
5 p.
|
artikel
|
| 84 |
Evolution of low-fluence heavy-ion damage in Si under high energy ion irradiation
|
Battaglia, A.
|
|
1991
|
55 |
1-4 |
p. 611-614
4 p.
|
artikel
|
| 85 |
Formation of thin silicon films using low energy oxygen ion implantation
|
Robinson, A.K.
|
|
1991
|
55 |
1-4 |
p. 555-560
6 p.
|
artikel
|
| 86 |
Gate oxides in high current implanters: how do they survive?
|
Sinclair, Frank
|
|
1991
|
55 |
1-4 |
p. 115-123
9 p.
|
artikel
|
| 87 |
Gauge-capability study of ion-implant monitors
|
Johnson, W.H.
|
|
1991
|
55 |
1-4 |
p. 148-153
6 p.
|
artikel
|
| 88 |
High-dose oxygen implantation into silica
|
Chater, R.J.
|
|
1991
|
55 |
1-4 |
p. 686-690
5 p.
|
artikel
|
| 89 |
Implantation-equipment data management for cost reduction, equipment optimization and process enhancement
|
Yarling, C.
|
|
1991
|
55 |
1-4 |
p. 104-108
5 p.
|
artikel
|
| 90 |
Implantation in the 1990s
|
Seidel, Thomas E.
|
|
1991
|
55 |
1-4 |
p. 17-19
3 p.
|
artikel
|
| 91 |
Implant dose uniformity simulation program
|
Nagai, Nobuo
|
|
1991
|
55 |
1-4 |
p. 253-256
4 p.
|
artikel
|
| 92 |
Implant uniformity evaluation using a Varian/Extrion scan compensator module on an electrostatic scanning ion implanter
|
Howard, Kenneth
|
|
1991
|
55 |
1-4 |
p. 202-206
5 p.
|
artikel
|
| 93 |
Improved wafer charge neutralization system in varian high current implanters
|
Mehta, S.
|
|
1991
|
55 |
1-4 |
p. 457-464
8 p.
|
artikel
|
| 94 |
Improvement of an ECR multicharged ion source
|
Ishii, Shigeyuki
|
|
1991
|
55 |
1-4 |
p. 296-299
4 p.
|
artikel
|
| 95 |
Initial performance results from the NV1002 high energy ion implanter
|
McIntyre, E.
|
|
1991
|
55 |
1-4 |
p. 473-477
5 p.
|
artikel
|
| 96 |
Investigation of backscattering and re-implantation during ion implantation into deep trenches
|
Posselt, M.
|
|
1991
|
55 |
1-4 |
p. 220-223
4 p.
|
artikel
|
| 97 |
Ion beam injection system for a variable energy RFQ accelerator
|
Amemiya, K.
|
|
1991
|
55 |
1-4 |
p. 339-342
4 p.
|
artikel
|
| 98 |
Ion beam synthesis of cobalt silicide: effect of implantation temperature
|
Dekempeneer, E.H.A.
|
|
1991
|
55 |
1-4 |
p. 769-772
4 p.
|
artikel
|
| 99 |
Ion beam system design for ULSI device requirements
|
White, Nicholas R.
|
|
1991
|
55 |
1-4 |
p. 287-295
9 p.
|
artikel
|
| 100 |
Ion implantation challenges in the drive towards 64 Mb and 256 Mb memory cell type devices
|
Giles, Alan D.
|
|
1991
|
55 |
1-4 |
p. 379-385
7 p.
|
artikel
|
| 101 |
Ion implantation in bipolar technology
|
Hill, Chris
|
|
1991
|
55 |
1-4 |
p. 1-8
8 p.
|
artikel
|
| 102 |
Ion implant standard
|
Larson, L.A.
|
|
1991
|
55 |
1-4 |
p. 275-280
6 p.
|
artikel
|
| 103 |
Ion projection lithography process on dry resist
|
Kholopkin, A.I.
|
|
1991
|
55 |
1-4 |
p. 902-904
3 p.
|
artikel
|
| 104 |
Isotope effects for ion-implantation profiles in silicon
|
Svensson, B.G.
|
|
1991
|
55 |
1-4 |
p. 650-654
5 p.
|
artikel
|
| 105 |
Knock-on of contaminants causing instabilities of transistor characteristics
|
Kröner, F.
|
|
1991
|
55 |
1-4 |
p. 198-201
4 p.
|
artikel
|
| 106 |
Limitations of the spreading resistance technique for ion implant profile measurements
|
Montserrat, J.
|
|
1991
|
55 |
1-4 |
p. 261-265
5 p.
|
artikel
|
| 107 |
Maximization of DRAM yield by control of surface charge and particle addition during high dose implantation
|
Horvath, J.
|
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1991
|
55 |
1-4 |
p. 154-159
6 p.
|
artikel
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| 108 |
Measurements and applications of high energy boron implants in silicon
|
La Ferla, A.
|
|
1991
|
55 |
1-4 |
p. 561-564
4 p.
|
artikel
|
| 109 |
Mechanically scanned ion implanters with two-axis disk tilt capability
|
Tamai, T.
|
|
1991
|
55 |
1-4 |
p. 408-412
5 p.
|
artikel
|
| 110 |
Metal vapor vacuum arc ion implantation for seeding of electroless Cu plating
|
Qian, X.Y.
|
|
1991
|
55 |
1-4 |
p. 893-897
5 p.
|
artikel
|
| 111 |
MeV ion-beam annealing of semiconductor structures
|
Williams, J.S.
|
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1991
|
55 |
1-4 |
p. 602-606
5 p.
|
artikel
|
| 112 |
Microscope-spectrophotometric analysis to determine the origins of the colour variations on SIMOX wafers
|
Reeson, Karen J.
|
|
1991
|
55 |
1-4 |
p. 718-724
7 p.
|
artikel
|
| 113 |
Milliampere metal ion beam formation using multipoint emission by an impregnated-electrode-type liquid-metal ion source
|
Ishikawa, Junzo
|
|
1991
|
55 |
1-4 |
p. 343-347
5 p.
|
artikel
|
| 114 |
Molecular complexes on implanted surfaces: unenhanced surface Raman study
|
Mathur, M.S.
|
|
1991
|
55 |
1-4 |
p. 671-675
5 p.
|
artikel
|
| 115 |
Monitoring of dose in low dose ion implantation
|
Hara, Tohru
|
|
1991
|
55 |
1-4 |
p. 250-252
3 p.
|
artikel
|
| 116 |
Monitoring the micro-uniformity performance of a spinning disk implanter
|
Current, Michael I.
|
|
1991
|
55 |
1-4 |
p. 173-177
5 p.
|
artikel
|
| 117 |
Near-surface damage created in silicon by BF2 + implantation
|
Li Xiaoqin,
|
|
1991
|
55 |
1-4 |
p. 589-592
4 p.
|
artikel
|
| 118 |
Negative-ion sources for ion implantation
|
Holmes, A.J.T.
|
|
1991
|
55 |
1-4 |
p. 323-327
5 p.
|
artikel
|
| 119 |
New approaches to charging control
|
Strain, Julie A.
|
|
1991
|
55 |
1-4 |
p. 97-103
7 p.
|
artikel
|
| 120 |
Nitrogen implantation for local oxidation (NILO) of silicon
|
Molle, P.
|
|
1991
|
55 |
1-4 |
p. 860-865
6 p.
|
artikel
|
| 121 |
Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry
|
Fried, M.
|
|
1991
|
55 |
1-4 |
p. 257-260
4 p.
|
artikel
|
| 122 |
Operating procedure for improving ion source lifetime for the 80-180XP ion implanter
|
Walther, S.R.
|
|
1991
|
55 |
1-4 |
p. 465-468
4 p.
|
artikel
|
| 123 |
Optical characteristics of multi-layer structures formed by ion beam synthesis and their computer simulation
|
Yu, Yuehui
|
|
1991
|
55 |
1-4 |
p. 730-733
4 p.
|
artikel
|
| 124 |
Oxygen implantation through patterned masks: a method for forming insulated silicon device islands while maintaining a planar wafer surface
|
Bussmann, U.
|
|
1991
|
55 |
1-4 |
p. 856-859
4 p.
|
artikel
|
| 125 |
Parallel beam ion implanter: IPX-7000
|
Mihara, Y.
|
|
1991
|
55 |
1-4 |
p. 417-422
6 p.
|
artikel
|
| 126 |
Particle contamination control in the EXTRION 220
|
Milgate, R.
|
|
1991
|
55 |
1-4 |
p. 66-70
5 p.
|
artikel
|
| 127 |
Particulate performance for robotics-based wafer handling ion implant system
|
Nasser-Ghodsi, M.
|
|
1991
|
55 |
1-4 |
p. 469-472
4 p.
|
artikel
|
| 128 |
Plasma cathode oxygen ion source
|
Shibuya, Takehisa
|
|
1991
|
55 |
1-4 |
p. 305-309
5 p.
|
artikel
|
| 129 |
Plasma immersion ion implantation for ULSI processing
|
Cheung, Nathan W.
|
|
1991
|
55 |
1-4 |
p. 811-820
10 p.
|
artikel
|
| 130 |
Plasma immersion Pd ion implantation seeding pattern formation for selective electroless Cu plating
|
Qian, X.Y.
|
|
1991
|
55 |
1-4 |
p. 888-892
5 p.
|
artikel
|
| 131 |
Possible mechanisms for particle transport in ion implanters
|
Brown, D.A.
|
|
1991
|
55 |
1-4 |
p. 348-354
7 p.
|
artikel
|
| 132 |
Preparation of atomically flat gold films by ionized cluster beam
|
Yamada, I.
|
|
1991
|
55 |
1-4 |
p. 876-879
4 p.
|
artikel
|
| 133 |
Preparation of W-Th films by ion beam sputtering
|
Griepentrog, M.
|
|
1991
|
55 |
1-4 |
p. 782-784
3 p.
|
artikel
|
| 134 |
Process control issues for ion implantation using large tilt angles
|
Simonton, Robert B.
|
|
1991
|
55 |
1-4 |
p. 188-192
5 p.
|
artikel
|
| 135 |
Process-induced defects in VLSI
|
Kolbesen, B.O.
|
|
1991
|
55 |
1-4 |
p. 124-131
8 p.
|
artikel
|
| 136 |
Production of oxygen plasmas using radio-frequency magnetron-discharge
|
Shibuya, Takehisa
|
|
1991
|
55 |
1-4 |
p. 364-369
6 p.
|
artikel
|
| 137 |
Proximity getterihg by MeV-implantation of carbon: microstructure and carrier lifetime measurements
|
Skorupa, W.
|
|
1991
|
55 |
1-4 |
p. 224-229
6 p.
|
artikel
|
| 138 |
Radiation damage in As+ implanted TiSi2 films
|
Hsu, C.T.
|
|
1991
|
55 |
1-4 |
p. 758-762
5 p.
|
artikel
|
| 139 |
Raman measurement of local SOI structure by SIMOX
|
Kato, K.
|
|
1991
|
55 |
1-4 |
p. 710-713
4 p.
|
artikel
|
| 140 |
Raman scattering and photoluminescence analysis of SOI/SIMOX structures obtained by sequential implantation and annealing correlated with cross sectional TEM
|
Pérez, A.
|
|
1991
|
55 |
1-4 |
p. 714-717
4 p.
|
artikel
|
| 141 |
Rapid thermal annealing of Mg+ and P+ dually implanted InP
|
Shen, Honglie
|
|
1991
|
55 |
1-4 |
p. 798-801
4 p.
|
artikel
|
| 142 |
Real time, in situ particle monitoring of the Applied Materials PI9200 ion implanter
|
Leung, Samuel
|
|
1991
|
55 |
1-4 |
p. 35-38
4 p.
|
artikel
|
| 143 |
Recent progress in depositing epitaxial metal films by an ionized cluster beam
|
Yamada, Isao
|
|
1991
|
55 |
1-4 |
p. 544-549
6 p.
|
artikel
|
| 144 |
RTP temperature uniformity mapping
|
Keenan, W.A.
|
|
1991
|
55 |
1-4 |
p. 269-274
6 p.
|
artikel
|
| 145 |
Shallow junction formation by dual Ge/B, Sn/B and Pb/B implants
|
Hašlar, V.
|
|
1991
|
55 |
1-4 |
p. 569-572
4 p.
|
artikel
|
| 146 |
SIMOX-material quality in a semi-industrial production
|
Lamure, J.M.
|
|
1991
|
55 |
1-4 |
p. 826-830
5 p.
|
artikel
|
| 147 |
SIMOX wafers with low dislocation density produced by a 100-mA-class high-current oxygen implanter
|
Nakashima, S.
|
|
1991
|
55 |
1-4 |
p. 847-851
5 p.
|
artikel
|
| 148 |
Simulation of the geometrical characteristics of a mechanically scanned high current implanter
|
Sinclair, Frank
|
|
1991
|
55 |
1-4 |
p. 482-487
6 p.
|
artikel
|
| 149 |
SOI structure formed by 95 keV N2 + and N+ implantation and epitaxial growth
|
Chenglu, Lin
|
|
1991
|
55 |
1-4 |
p. 742-745
4 p.
|
artikel
|
| 150 |
SOI structures produced by oxygen ion implantation and their annealing behaviour
|
Lirong, Zheng
|
|
1991
|
55 |
1-4 |
p. 754-757
4 p.
|
artikel
|
| 151 |
Some properties of amorphous silicon produced by helium ion implantation
|
Buravlyov, A.V.
|
|
1991
|
55 |
1-4 |
p. 642-646
5 p.
|
artikel
|
| 152 |
Special invited talk: Ion beams in retrospect
|
Freeman, J.H.
|
|
1991
|
55 |
1-4 |
p. ix-
1 p.
|
artikel
|
| 153 |
Spectroscopic ellipsometry for depth profiling of ion implanted materials
|
Vanhellemont, J.
|
|
1991
|
55 |
1-4 |
p. 183-187
5 p.
|
artikel
|
| 154 |
Studies on Si++ B+ dual implantations into the top silicon layer of SIMNI material
|
Zhang, Shunkai
|
|
1991
|
55 |
1-4 |
p. 738-741
4 p.
|
artikel
|
| 155 |
Sublimation and diffusion of arsenic implanted into silicon at rapid electron beam annealing
|
Grötzschel, R.
|
|
1991
|
55 |
1-4 |
p. 573-575
3 p.
|
artikel
|
| 156 |
Sub-100 mn p+/n junction formation using plasma immersion ion implantation
|
Qian, X.Y.
|
|
1991
|
55 |
1-4 |
p. 821-825
5 p.
|
artikel
|
| 157 |
System and process enhancements of the Applied Materials Precision Implant 9200
|
Jaffe, P.R.
|
|
1991
|
55 |
1-4 |
p. 448-452
5 p.
|
artikel
|
| 158 |
Techniques for dose matching between ion implanters
|
Lundquist, P.
|
|
1991
|
55 |
1-4 |
p. 243-249
7 p.
|
artikel
|
| 159 |
The annealing behaviour of ion-implanted Si studied using time-resolved reflectivity
|
Thornton, R.P.
|
|
1991
|
55 |
1-4 |
p. 598-601
4 p.
|
artikel
|
| 160 |
The application of a 600 keV heavy ion implanter
|
Xinyuan, Jiang
|
|
1991
|
55 |
1-4 |
p. 778-781
4 p.
|
artikel
|
| 161 |
The beam performance of the Genus G-1500 ion implanter
|
Tokoro, N.
|
|
1991
|
55 |
1-4 |
p. 434-438
5 p.
|
artikel
|
| 162 |
The effects of epitaxy and oxidation on the properties of SIMNI and SIMOX materials
|
Jinhua, Li
|
|
1991
|
55 |
1-4 |
p. 746-749
4 p.
|
artikel
|
| 163 |
The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing
|
Marou, F.
|
|
1991
|
55 |
1-4 |
p. 655-660
6 p.
|
artikel
|
| 164 |
The EXTRION 220 parallel scan magnet
|
Kaim, R.E.
|
|
1991
|
55 |
1-4 |
p. 453-456
4 p.
|
artikel
|
| 165 |
The history of uniformity mapping in ion implantation
|
Yarling, C.B.
|
|
1991
|
55 |
1-4 |
p. 235-242
8 p.
|
artikel
|
| 166 |
The influence of implantation temperature and subsequent annealing on residual implantation defects in silicon
|
Hazdra, P.
|
|
1991
|
55 |
1-4 |
p. 637-641
5 p.
|
artikel
|
| 167 |
The IR properties in SOI wafers formed by oxygen implantation into silicon
|
Diantong, Lu
|
|
1991
|
55 |
1-4 |
p. 705-709
5 p.
|
artikel
|
| 168 |
The MeV ion implantation system “RFQ-1000” and its applications
|
Hirakimoto, Akira
|
|
1991
|
55 |
1-4 |
p. 493-501
9 p.
|
artikel
|
| 169 |
The Nissin NH-20SP medium-current ion implanter
|
Nagai, N.
|
|
1991
|
55 |
1-4 |
p. 393-397
5 p.
|
artikel
|
| 170 |
The Nissin PR-80A high current ion implantation system
|
Kawai, T.
|
|
1991
|
55 |
1-4 |
p. 443-447
5 p.
|
artikel
|
| 171 |
The peculiarities of the new phase formation by O+ ion implantation into silicon under thermo-ionization excitation
|
Belogorokhov, A.I.
|
|
1991
|
55 |
1-4 |
p. 750-753
4 p.
|
artikel
|
| 172 |
The phased linear scanner
|
Aitken, Derek
|
|
1991
|
55 |
1-4 |
p. 517-521
5 p.
|
artikel
|
| 173 |
Thermal-annealing effects on the structural and electrical properties of heavy-ion-implanted silicon layers
|
Said, Jumana
|
|
1991
|
55 |
1-4 |
p. 576-579
4 p.
|
artikel
|
| 174 |
Thermal wave characterization of silicon implanted with MeV phosphorus ions
|
Anjum, M.
|
|
1991
|
55 |
1-4 |
p. 266-268
3 p.
|
artikel
|
| 175 |
Thermal-wave measurements of high-dose ion implantation
|
Taylor, Michael
|
|
1991
|
55 |
1-4 |
p. 725-729
5 p.
|
artikel
|
| 176 |
The study of Si0.5Ge0.5 alloy implanted by high dose oxygen
|
Zhang, J.P.
|
|
1991
|
55 |
1-4 |
p. 691-696
6 p.
|
artikel
|
| 177 |
The technology of finely focused ion beams
|
Harriott, L.R.
|
|
1991
|
55 |
1-4 |
p. 802-810
9 p.
|
artikel
|
| 178 |
The use of negative ions to enhance beam currents at low energies in an MeV ion implanter
|
O'Connor, John P.
|
|
1991
|
55 |
1-4 |
p. 207-210
4 p.
|
artikel
|
| 179 |
The use of tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) as liquid reagents for ion implantation
|
Larson, Lawrence A.
|
|
1991
|
55 |
1-4 |
p. 109-114
6 p.
|
artikel
|
| 180 |
Transport-theoretical studies of static and dynamic recoil mixing
|
Jimenez-Rodriguez, J.J.
|
|
1991
|
55 |
1-4 |
p. 681-685
5 p.
|
artikel
|
| 181 |
Ultra low energy (100–2000 eV) boron implantation into crystalline and silicon-preamorphized silicon
|
Bousetta, A.
|
|
1991
|
55 |
1-4 |
p. 565-568
4 p.
|
artikel
|
| 182 |
Vacuum system design for ion implanters
|
Hucknall, D.J.
|
|
1991
|
55 |
1-4 |
p. 439-442
4 p.
|
artikel
|
| 183 |
Wafer charging study on a Varian 160 XP ion implanter with charge-sensitive devices
|
Nee, R.
|
|
1991
|
55 |
1-4 |
p. 137-142
6 p.
|
artikel
|
| 184 |
X-ray diffraction studies of radiation damage in gallium arsenide
|
van Berlo, W.H.
|
|
1991
|
55 |
1-4 |
p. 785-788
4 p.
|
artikel
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