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                             178 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A comparative study of D and H implantation-induced shallow donors in Si Ohmura, Y.
 1989
 39 1-4 p. 377-380
4 p.
 artikel
2 A comparison of the wear behavior of Ag, B, C, N, Pb and Sn implanted steels with 1.5% to 18% chromium Kluge, A.
 1989
 39 1-4 p. 531-534
4 p.
 artikel
3 A microstructural investigation of 52100 steel by N+ implantation and recoil implantation Ye Weiyi,
 1989
 39 1-4 p. 563-566
4 p.
 artikel
4 Amorphization in boron-steels by Xe ion beam mixing Sakamoto, Isao
 1989
 39 1-4 p. 118-121
4 p.
 artikel
5 A new type of solid phase epitaxy of AlxGa1−xSb in evaporated Al/GaSb substrate by electron-beam irradiation (electron-beam epitaxy) Wada, Takao
 1989
 39 1-4 p. 476-479
4 p.
 artikel
6 Angle and energy distributions of sputtered particles from molybdenum (110) surfaces Chakarov, I.R.
 1989
 39 1-4 p. 81-85
5 p.
 artikel
7 Anneal behaviour of compositional and electrical characteristics of vanadium implanted silicon Vidwans, Subhaga
 1989
 39 1-4 p. 280-283
4 p.
 artikel
8 Anomalous depth profiles of light ions and noble gases implanted into polymers Guimarães, R.B.
 1989
 39 1-4 p. 800-804
5 p.
 artikel
9 A noncharging direct-write electron beam process for a trilayer resist by ion shower technology Hashimoto, Kazuhiko
 1989
 39 1-4 p. 813-816
4 p.
 artikel
10 Ar, O2 and CF4 plasma treatment of poly-(vinylidene fluoride), polyimide and polyamidoimide and its relationship to wettability Momose, Yoshihiro
 1989
 39 1-4 p. 805-808
4 p.
 artikel
11 As-grown epitaxial YBaCuO films prepared by low energy oxygen ion assisting ion beam sputtering Fujita, Jun-ichi
 1989
 39 1-4 p. 644-647
4 p.
 artikel
12 A SIMS and TEM analysis of the growth mechanisms of annealed buried SiO2 layers formed by incremental high-dose oxygen Ion implantation into silicon at 150 keV Griffin, C.J.
 1989
 39 1-4 p. 215-219
5 p.
 artikel
13 Author index 1989
 39 1-4 p. 817-831
15 p.
 artikel
14 Bombardment-induced compositional change with alloys, oxides, oxysalts, and halides Kelly, Roger
 1989
 39 1-4 p. 43-56
14 p.
 artikel
15 Carrier concentration profiles in multiply implanted silicon with 0.5–7.5 MeV phosphorus Yuguang, Wu
 1989
 39 1-4 p. 428-432
5 p.
 artikel
16 Channeling and backscattering of low energy ions Kato, M.
 1989
 39 1-4 p. 30-34
5 p.
 artikel
17 Characterization of oxygen-implanted polyethylene by various analytical techniques Ishitani, A.
 1989
 39 1-4 p. 783-786
4 p.
 artikel
18 Characterization of semiconductor heterointerface and YBaCuO superconductor using ion-beam induced luminescence method Taguchi, Tsunemasa
 1989
 39 1-4 p. 469-475
7 p.
 artikel
19 Chemical and physical processes during the formation of MoSi2 by ion-beam mixing Vályi, Géza
 1989
 39 1-4 p. 268-271
4 p.
 artikel
20 Comparison between p-type dopants for shallow junction formation by diffusion from an ion implanted silicide Lippens, P.
 1989
 39 1-4 p. 330-333
4 p.
 artikel
21 Compensation-like effects in BF2 + + As+ and BF2 + + P+ implanted silicon Hsu, S.N.
 1989
 39 1-4 p. 423-427
5 p.
 artikel
22 Computer simulation of ion beam enhanced deposition of silicon nitride films Jiankun, Zhou
 1989
 39 1-4 p. 182-184
3 p.
 artikel
23 Computer simulation of the effect of disordered surface layers on the reflection of phosphorus ions from silicon (100) crystalline targets in grazing incidence ion implantation Oura, Kenjiro
 1989
 39 1-4 p. 11-14
4 p.
 artikel
24 Conversion of conduction in p-InAs by Ar+ ion implantation Gerasimenko, N.N.
 1989
 39 1-4 p. 480-482
3 p.
 artikel
25 Correlation between the modification of the chemical structure and the electrical properties of Ar-ion bombarded polyimide Marletta, Giovanni
 1989
 39 1-4 p. 792-795
4 p.
 artikel
26 Corrosion inhibition by ion beam induced vacuum carburization of tool steel Braun, M.
 1989
 39 1-4 p. 556-558
3 p.
 artikel
27 Crystalline orientation control by the IVD method Andoh, Y.
 1989
 39 1-4 p. 158-161
4 p.
 artikel
28 Crystallinity and strength of diamond bombarded with low energy ion beams Miyamoto, Iwao
 1989
 39 1-4 p. 689-691
3 p.
 artikel
29 Damage formation and annealing of high energy ion implantation in Si Tamura, M.
 1989
 39 1-4 p. 318-329
12 p.
 artikel
30 Damage profiles in alkali halides irradiated with high-energy heavy ions Kikuchi, A.
 1989
 39 1-4 p. 724-727
4 p.
 artikel
31 Defects after preamorphisation and annealing Thornton, J.
 1989
 39 1-4 p. 389-392
4 p.
 artikel
32 Depth distribution analysis of martensitic transformations in Xe implanted austenitic stainless steel Johnson, E.
 1989
 39 1-4 p. 573-577
5 p.
 artikel
33 Depth profile of nitrogen implanted in steel Yoshihiro Hashiguchi,
 1989
 39 1-4 p. 578-582
5 p.
 artikel
34 Depth selective microstructural analysis of ion implanted metals by cross-section transmission electron microscopy and computer simulation Gerritsen, E.
 1989
 39 1-4 p. 614-618
5 p.
 artikel
35 Development of ion mixing equipment for R&D use and preparation of tin films by N2 gas assisted ion beam mixing Kunibe, T.
 1989
 39 1-4 p. 170-173
4 p.
 artikel
36 Diffusion and activation mechanisms in ion-implanted GaAs Morris, N.
 1989
 39 1-4 p. 453-456
4 p.
 artikel
37 Editorial Namba, Susumu
 1989
 39 1-4 p. vii-
1 p.
 artikel
38 Editorial Board 1989
 39 1-4 p. IFC-
1 p.
 artikel
39 Effect of He+ and B+ ion irradiation of amorphous alloy Fe100 − x Bx Hayashi, Nobuyuki
 1989
 39 1-4 p. 587-590
4 p.
 artikel
40 Effects of different ion-implanted dopant species on the solid-phase epitaxy of LiNbO3 optical waveguides Poker, D.B.
 1989
 39 1-4 p. 716-719
4 p.
 artikel
41 Effects of dopants on the epitaxial growth of MoSi2 on (111)Si Cheng, J.Y.
 1989
 39 1-4 p. 272-275
4 p.
 artikel
42 Effects of implantation temperature on the hardness of iron nitrides formed with high nitrogen dose Fujihana, Takanobu
 1989
 39 1-4 p. 548-551
4 p.
 artikel
43 Effects of preparative ion implantation for application in plasma source nitriding of metals Nunogaki, M.
 1989
 39 1-4 p. 591-594
4 p.
 artikel
44 Effects of silicide formation on the removal of end-of-range ion implantation damage in silicon Lur, W.
 1989
 39 1-4 p. 297-301
5 p.
 artikel
45 Ejection pattern of sputtered atoms from Cu(100) under 10 keV Ar+ ion bombardment Nagayama, Takahisa
 1989
 39 1-4 p. 91-94
4 p.
 artikel
46 Electrical measurement of implantation damage profiles in InP Häussler, W.
 1989
 39 1-4 p. 483-486
4 p.
 artikel
47 Electrochemical studies of magnesium implanted with high doses of light ions Leitão, E.
 1989
 39 1-4 p. 559-562
4 p.
 artikel
48 Electronic-energy-loss-assisted creep in heavy-ion-irradiated amorphous Fe85B15 Audouard, A.
 1989
 39 1-4 p. 18-21
4 p.
 artikel
49 Electronic structure of superconducting MoN thin films produced by ion implantation Saito, K.
 1989
 39 1-4 p. 623-627
5 p.
 artikel
50 Evaluation of SOI/SIMOX substrates using photoconductive frequency resolved spectroscopy (PCRFS) Homewood, K.P.
 1989
 39 1-4 p. 207-209
3 p.
 artikel
51 Experimental and theoretical study of nickel implanted with 80 eV helium-ions D'olieslaeger, M.
 1989
 39 1-4 p. 595-598
4 p.
 artikel
52 Fluence- and temperature-dependence of sputtering yield by 25 keV He-ion bombardment on tungsten and niobium Tomita, Michio
 1989
 39 1-4 p. 95-98
4 p.
 artikel
53 Focused ion beam processing Namba, Susumu
 1989
 39 1-4 p. 504-510
7 p.
 artikel
54 Focused phosphorus ion beam implantation into silicon Madokoro, Y.
 1989
 39 1-4 p. 511-514
4 p.
 artikel
55 Formation of buried epitaxial Co silicides by ion implantation Kohlhof, K.
 1989
 39 1-4 p. 276-279
4 p.
 artikel
56 Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantation Xiong, Fulin
 1989
 39 1-4 p. 487-491
5 p.
 artikel
57 Formation of doped polycrystal si layers through solid phase pegrowth Takahashi, M.
 1989
 39 1-4 p. 338-342
5 p.
 artikel
58 Formation of high T c, superconducting films by laser induced fragments Eryu, Osamu
 1989
 39 1-4 p. 640-643
4 p.
 artikel
59 Formation of metastable niobium oxide by the vapor quenching of sputtered particles Obara, Kozo
 1989
 39 1-4 p. 652-656
5 p.
 artikel
60 Formation of noble-metal nitrides by nitrogen implantation Zhou, X.
 1989
 39 1-4 p. 583-586
4 p.
 artikel
61 Formation of rutile TiO2 induced by high-dose O+ -implantation and its characteristics Okabe, Yoshio
 1989
 39 1-4 p. 619-622
4 p.
 artikel
62 Formation of shallow P+-N junctions by dual Ge+/B+ implantation Ferreiro, A.
 1989
 39 1-4 p. 413-416
4 p.
 artikel
63 Formation of silicon carbide layers by the ion beam technique and their electrical properties Kimura, Tadamasa
 1989
 39 1-4 p. 238-241
4 p.
 artikel
64 Formation of the icosahedral AlFe phase by ion beam mixing Hohmuth, K.
 1989
 39 1-4 p. 136-140
5 p.
 artikel
65 Formation of titanium silicide and shallow junctions by BF2 + implantation and low temperature annealing Dezhang, Zhu
 1989
 39 1-4 p. 288-290
3 p.
 artikel
66 Friction reduction by ion-beam-induced vacuum carburization of steel materials Braun, M.
 1989
 39 1-4 p. 544-547
4 p.
 artikel
67 Gallium arsenide surface modification by low-energy argon and nitrogen ion implantation Wang, Y.G.
 1989
 39 1-4 p. 461-465
5 p.
 artikel
68 Grain growth and phase morphology in ion beam mixed, two phase NiAl and NiCrAl alloys Alexander, Dale
 1989
 39 1-4 p. 130-135
6 p.
 artikel
69 High energy Li implanted profiles in silicon Behar, M.
 1989
 39 1-4 p. 22-25
4 p.
 artikel
70 High-T c superconductor characteristics control by ion implantation Matsui, S.
 1989
 39 1-4 p. 635-639
5 p.
 artikel
71 Hydrogen implantation into (100) silicon: A study of the released damage Meda, L.
 1989
 39 1-4 p. 381-385
5 p.
 artikel
72 Implanted layer formation in 3d-transition metal films: In situ electrical resistivity measurements Gondō, Yasuo
 1989
 39 1-4 p. 611-613
3 p.
 artikel
73 Improvement of wear properties of glassy carbon surface layer modified by ion implantations Iwaki, Masaya
 1989
 39 1-4 p. 700-703
4 p.
 artikel
74 Influence of SiO2 cap layers on lateral solid-phase epitaxy of implanted amorphous Si films Ishiwara, H.
 1989
 39 1-4 p. 393-396
4 p.
 artikel
75 In situ patterning of Si3N4 by an ion-beam-induced gas surface reaction Xu, Zheng
 1989
 39 1-4 p. 750-753
4 p.
 artikel
76 Interface tailoring for adhesion using ion beams Baglin, J.E.E.
 1989
 39 1-4 p. 764-768
5 p.
 artikel
77 〈001〉 Interstitial complexes in silicon Gerasimenko, N.N.
 1989
 39 1-4 p. 372-376
5 p.
 artikel
78 Investigation of defects in weakly damaged ion implanted GaAs layers Wesch, W.
 1989
 39 1-4 p. 445-448
4 p.
 artikel
79 Investigation of soi material formed by high-dose oxygen and nitrogen implantation Schork, Rainer
 1989
 39 1-4 p. 220-224
5 p.
 artikel
80 Investigation on diamondlike carbon films: Structure, properties and doping effect Cheng Shichang,
 1989
 39 1-4 p. 692-695
4 p.
 artikel
81 Ion-beam-induced epitaxial crystallization of implanted and chemical vapor deposited amorphous silicon La Ferla, A.
 1989
 39 1-4 p. 311-317
7 p.
 artikel
82 Ion beam induced epitaxy of (100) and (111) GaAs Johnson, S.T.
 1989
 39 1-4 p. 449-452
4 p.
 artikel
83 Ion beam mixing at the Fe/SiO2 interface Battaglin, G.
 1989
 39 1-4 p. 126-129
4 p.
 artikel
84 Ion beam mixing in Al/Fe-bilayers Rauschenbach, B.
 1989
 39 1-4 p. 141-143
3 p.
 artikel
85 Ion beam modification and analysis of single crystalline YBa2Cu3O7 thin films Meyer, O.
 1989
 39 1-4 p. 628-634
7 p.
 artikel
86 Ion beam modification of polyacetylene films Lin, Senhao
 1989
 39 1-4 p. 778-782
5 p.
 artikel
87 Ion implantation and hydrogen passivation in amorphous silicon films Galloni, R.
 1989
 39 1-4 p. 386-388
3 p.
 artikel
88 Ion implantation change in the chemical structure of a resist Fujimura, Shuzo
 1989
 39 1-4 p. 809-812
4 p.
 artikel
89 Ion implantation for GaAs IC fabrication Yamazaki, Hajime
 1989
 39 1-4 p. 433-440
8 p.
 artikel
90 Ion implantation in single-crystal magnetic ferrite Takai, M.
 1989
 39 1-4 p. 728-731
4 p.
 artikel
91 Ion implantation in Si/Si1−xGex epitaxial layers and superlattices Mantl, S.
 1989
 39 1-4 p. 405-408
4 p.
 artikel
92 Ion-implanted graphitic carbons Kenny, M.J.
 1989
 39 1-4 p. 704-707
4 p.
 artikel
93 Ion induced mixing in Al/Pd thin films Lee, R.Y.
 1989
 39 1-4 p. 114-117
4 p.
 artikel
94 Ion induced phase precipitation and growth in thin films: Fractals and dendrites Huang, L.J.
 1989
 39 1-4 p. 144-147
4 p.
 artikel
95 Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist Asano, Tanemasa
 1989
 39 1-4 p. 739-741
3 p.
 artikel
96 Ion-mixed Zr/ceramics interfaces — XPS study Noda, Shoji
 1989
 39 1-4 p. 684-688
5 p.
 artikel
97 Ion resist properties of thin films of transition metal oxides Koshida, N.
 1989
 39 1-4 p. 736-738
3 p.
 artikel
98 Ion species and energy control of finely focused FIBs for maskless in situ microfabrication processes Miyauchi, Eizo
 1989
 39 1-4 p. 515-520
6 p.
 artikel
99 Irradiation effect on thermal stability of an amorphous FeMo alloy Shang, C.H.
 1989
 39 1-4 p. 607-610
4 p.
 artikel
100 Lateral control of impurity-induced disordering of AlAs/GaAs superlattice Kawabe, M.
 1989
 39 1-4 p. 441-444
4 p.
 artikel
101 Lattice location study on krypton atoms in aluminium by means of the channelling method Yagi, Eiichi
 1989
 39 1-4 p. 68-71
4 p.
 artikel
102 Light element redistribution and property changes in insulators due to ion bombardment and chemical processing Arnold, George W.
 1989
 39 1-4 p. 708-715
8 p.
 artikel
103 Low energy ion beam mixing of metal-copper multilayers King, B.V.
 1989
 39 1-4 p. 153-157
5 p.
 artikel
104 Low-energy ion beams, molecular beam epitaxy, and surface morphology Tsao, J.Y.
 1989
 39 1-4 p. 72-80
9 p.
 artikel
105 Martensitic transformations in 304 stainless steel after implantation with helium, hydrogen and deuterium Johnson, E.
 1989
 39 1-4 p. 567-572
6 p.
 artikel
106 Mesotaxy: Synthesis of buried single-crystal silicide layers by implantation White, Alice E.
 1989
 39 1-4 p. 253-258
6 p.
 artikel
107 MeV ion beam-enhanced adhesion of Au films on alumina substrates of various roughness Daudin, B.
 1989
 39 1-4 p. 680-683
4 p.
 artikel
108 Modeling of concentration profiles from very high dose ion implantation Bunker, S.N.
 1989
 39 1-4 p. 7-10
4 p.
 artikel
109 Modification of solid surface by intense pulsed light-ion and metal-ion beams Nakagawa, Y.
 1989
 39 1-4 p. 603-606
4 p.
 artikel
110 Modification of the mechanical properties of ceramics by ion implantation Hioki, Tatsumi
 1989
 39 1-4 p. 657-664
8 p.
 artikel
111 Modification of ZnO crystal orientation in dual ion beam sputtering deposition Suzuki, Yoshihiko
 1989
 39 1-4 p. 732-735
4 p.
 artikel
112 Morphology of the silicon implanted interface of a polysilicon/single crystal silicon structure Okuda, S.
 1989
 39 1-4 p. 334-337
4 p.
 artikel
113 Mössbauer spectroscopy study of epitaxial and buried CoSi layers Vantomme, A.
 1989
 39 1-4 p. 284-287
4 p.
 artikel
114 New trends in SIMOX Van Ommen, A.H.
 1989
 39 1-4 p. 194-202
9 p.
 artikel
115 Nickel and cobalt silicide formation by broad and focused ion beam implantation Aoki, T.
 1989
 39 1-4 p. 291-296
6 p.
 artikel
116 Nitrogen ion implantation into ZrN thin films Kobayashi, N.
 1989
 39 1-4 p. 746-749
4 p.
 artikel
117 Nitrogen-15 isotope tracer studies of buried nitride layer formation by high dose implantation Kilner, J.A.
 1989
 39 1-4 p. 225-229
5 p.
 artikel
118 Nonlinear phenomena in hydrogen implantation into (100) silicon Cerofolini, G.F.
 1989
 39 1-4 p. 26-29
4 p.
 artikel
119 Novel method in rf bias sputtering Nomura, Ichirou
 1989
 39 1-4 p. 99-103
5 p.
 artikel
120 Nucleation and growth of SiO2 precipitates in SOI/SIMOX related materials — Dependence upon damage and atomic oxygen profiles Hemment, P.L.F.
 1989
 39 1-4 p. 210-214
5 p.
 artikel
121 Optical and electrical properties of C+-implanted GaAs Shigetomi, Shigeru
 1989
 39 1-4 p. 457-460
4 p.
 artikel
122 Optical properties of ion implanted AINx Dai, Yisheng
 1989
 39 1-4 p. 742-745
4 p.
 artikel
123 Oxidativ wear in boron-implanted Fe Hirano, Motohisa
 1989
 39 1-4 p. 540-543
4 p.
 artikel
124 Oxygen-redistribution process in SIMOX Yoshino, A.
 1989
 39 1-4 p. 203-206
4 p.
 artikel
125 Picosecond diffusion in a thermal spike during ion mixing Ibe, Eishi
 1989
 39 1-4 p. 148-152
5 p.
 artikel
126 Pileup of arsenic implanted into silicon with high doses at surfaces Yokota, Katsuhiro
 1989
 39 1-4 p. 362-365
4 p.
 artikel
127 Plastic flow of vitreous silica and Pyrex during bombardment with fast heavy ions Klaumünzer, S.
 1989
 39 1-4 p. 665-669
5 p.
 artikel
128 Preparation of thin superconducting YBaCu oxide films by ion beam mixing Rauschenbach, B.
 1989
 39 1-4 p. 648-651
4 p.
 artikel
129 Processes in implanted silicon stimulated by silicidation reactions Gerasimenko, N.N.
 1989
 39 1-4 p. 259-267
9 p.
 artikel
130 Properties of aluminum nitride films by an ion beam and vapor deposition method Ogata, K.
 1989
 39 1-4 p. 178-181
4 p.
 artikel
131 Properties of sputtered tungsten silicide films deposited with different argon pressures Hara, Tohru
 1989
 39 1-4 p. 302-305
4 p.
 artikel
132 Property modification of Ag films by ion assisted deposition Pan, Xianzheng
 1989
 39 1-4 p. 162-165
4 p.
 artikel
133 Protection against hydrogen embrittlement by ion beam mixing Ensinger, W.
 1989
 39 1-4 p. 552-555
4 p.
 artikel
134 Radiation damage and amorphization of silicon by 6 MeV Ni ion implantation Lindner, J.K.N.
 1989
 39 1-4 p. 306-310
5 p.
 artikel
135 Radiation damage in Ge induced by Te+ implantation near channeling conditions Karpuzov, D.S.
 1989
 39 1-4 p. 417-422
6 p.
 artikel
136 Radiation-enhanced diffusion of implanted impurities in amorphous Si Priolo, F.
 1989
 39 1-4 p. 343-346
4 p.
 artikel
137 Rapid thermal annealing of arsenic-implanted poly-Si layers on insulator Takai, M.
 1989
 39 1-4 p. 352-356
5 p.
 artikel
138 Rapid thermal annealing of hot implants in silicon Coffa, S.
 1989
 39 1-4 p. 357-361
5 p.
 artikel
139 RBS analysis of beam-processed microarea by focused MeV ion beam Kinomura, A.
 1989
 39 1-4 p. 40-42
3 p.
 artikel
140 Reactive ion etching of gallium arsenide Avtiushkov, A.P.
 1989
 39 1-4 p. 496-499
4 p.
 artikel
141 Recent progress in refractory-metal silicide formation by ion beam mixing and its applications to VLSL Okabayashi, Hidekazu
 1989
 39 1-4 p. 246-252
7 p.
 artikel
142 Recent progress in understanding ion-beam mixing of metals Rehn, L.E.
 1989
 39 1-4 p. 104-113
10 p.
 artikel
143 Recovery of carbon-implanted silicon and germanium Yamaguchi, S.
 1989
 39 1-4 p. 409-412
4 p.
 artikel
144 Reduction of phosphorus transient enhanced diffusion due to extended defects in ion implanted silicon Servidori, M.
 1989
 39 1-4 p. 347-351
5 p.
 artikel
145 Reflection electron energy loss spectroscopy (REELS) of conductive polymers obtained by keV bombardment Marletta, Giovanni
 1989
 39 1-4 p. 773-777
5 p.
 artikel
146 Relation between structure and electronic properties of ion irradiated polymers Davenas, J.
 1989
 39 1-4 p. 754-763
10 p.
 artikel
147 Secondary ion generation mechanism studied by ISS-SIMS and work function measurements Kawatoh, Eizoh
 1989
 39 1-4 p. 35-39
5 p.
 artikel
148 Sharpening diamond tools having an apex angle of less than 60° with a low energy ion beam Miyamoto, Iwao
 1989
 39 1-4 p. 696-699
4 p.
 artikel
149 Silicon-on-insulator structures by SIMOX and SIMNI procedures studied by Raman scattering and Rutherford backscattering Takai, M.
 1989
 39 1-4 p. 400-404
5 p.
 artikel
150 Simulation of the growth of inert gas bubbles near the surface of an amorphous alloy Knuyt, G.
 1989
 39 1-4 p. 60-63
4 p.
 artikel
151 Si3N4 crystallization during high temperature nitrogen implantation into silicon Bussmann, U.
 1989
 39 1-4 p. 230-233
4 p.
 artikel
152 Solid-phase regrowth of amorphous silicon layers in the presence of the point defect flux Buravlyov, A.V.
 1989
 39 1-4 p. 366-369
4 p.
 artikel
153 Speculations on a mechanism for the ion beam induced degradation of polyimide Davenas, J.
 1989
 39 1-4 p. 796-799
4 p.
 artikel
154 Stopping powers of 1.5–7.2 MeV 4He ions in Havar, nickel, Kapton and Mylar Kiss, Á.Z.
 1989
 39 1-4 p. 15-17
3 p.
 artikel
155 Structural and electrical properties of Ge-ion-implanted Si layer Kuriyama, K.
 1989
 39 1-4 p. 397-399
3 p.
 artikel
156 Structural investigation of Al2O3 formed by ion implantation at various doses Pawar, P.S.
 1989
 39 1-4 p. 670-674
5 p.
 artikel
157 Structural modifications induced by electronic energy deposition during the slowing down of heavy ions in matter Toulemonde, M.
 1989
 39 1-4 p. 1-6
6 p.
 artikel
158 Structure and magnetic properties of Fe-implanted sapphire Ohkubo, M.
 1989
 39 1-4 p. 675-679
5 p.
 artikel
159 Study of modification processes in sputtering during oxygen exposure Saidoh, Masahiro
 1989
 39 1-4 p. 599-602
4 p.
 artikel
160 Study of the sputter rate of thin aluminium layers deposited on polymer (PET) substrates De Puydt, Y.
 1989
 39 1-4 p. 86-90
5 p.
 artikel
161 Surface composition of CoNi alloys under Ar+ ion bombardment Kurokawa, A.
 1989
 39 1-4 p. 57-59
3 p.
 artikel
162 Synthesis of silicon nitride films by ion beam enhanced deposition Xianghuai, Liu
 1989
 39 1-4 p. 185-189
5 p.
 artikel
163 Temperature dependence of ion-beam mixing in Fe/Zr bilayers Ding, Fu-Rong
 1989
 39 1-4 p. 122-125
4 p.
 artikel
164 The effect of sputtered impurities on the deep ion-implanted P+N junction in silicon Zamastil, Jaroslav
 1989
 39 1-4 p. 370-371
2 p.
 artikel
165 Thermal stability of silicon nitride coatings produced by ion assisted deposition Grabowski, K.S.
 1989
 39 1-4 p. 190-193
4 p.
 artikel
166 The role of point defects in ion-bombardment-enhanced and dopant-enhanced grain growth in silicon thin films Atwater, Harry A.
 1989
 39 1-4 p. 64-67
4 p.
 artikel
167 Titanium nitride deposited by dual ion beams Ito, H.
 1989
 39 1-4 p. 174-177
4 p.
 artikel
168 Transition and rare earth elements used as luminescent probes in studying ion-implanted III–V and II–VI semiconductors Gippius, A.A.
 1989
 39 1-4 p. 492-495
4 p.
 artikel
169 Transition from localized defects to continuous latent tracks in magnetic insulators irradiated by high energy heavy ions: A HREM investigation Houpert, Ch.
 1989
 39 1-4 p. 720-723
4 p.
 artikel
170 Two kinds of defect centers observed in sin films prepared by ECR plasma CVD method Izumi, T.
 1989
 39 1-4 p. 234-237
4 p.
 artikel
171 UV absorption and sol-gel transition in ion-bombarded polystyrene Licciardello, Antonino
 1989
 39 1-4 p. 769-772
4 p.
 artikel
172 Variation of crystallization with arrival ratio in titanium nitride films formed by dynamic mixing method Satou, M.
 1989
 39 1-4 p. 166-169
4 p.
 artikel
173 Very high current ECR ion source Shimada, Masaru
 1989
 39 1-4 p. 242-245
4 p.
 artikel
174 Via-hole filling by simultaneous deposition and ion etching Mogami, T.
 1989
 39 1-4 p. 500-503
4 p.
 artikel
175 Wear mechanisms in ferrous alloys Goode, Philip D
 1989
 39 1-4 p. 521-530
10 p.
 artikel
176 Wear reduction by recoil implantation of aluminium into steel Chapman, G.E.
 1989
 39 1-4 p. 535-539
5 p.
 artikel
177 XPS and AES investigations of silicon oxidation by ion-implanted oxygen Labunov, V.A.
 1989
 39 1-4 p. 466-468
3 p.
 artikel
178 XPS study of ion beam irradiation effects in polyimide layers Karpuzov, D.
 1989
 39 1-4 p. 787-791
5 p.
 artikel
                             178 gevonden resultaten
 
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