nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment
|
Vittone, E. |
|
2016 |
372 |
C |
p. 128-142 15 p. |
artikel |
2 |
Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons
|
Garcia Lopez, J. |
|
2016 |
372 |
C |
p. 143-150 8 p. |
artikel |
3 |
Editorial board
|
|
|
2016 |
372 |
C |
p. IFC- 1 p. |
artikel |
4 |
Effects of swift heavy ion irradiation on dielectric relaxation and conduction mechanism in Ba0.90Sr0.10TiO3
|
Mohan, C.R.K. |
|
2016 |
372 |
C |
p. 50-57 8 p. |
artikel |
5 |
Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films
|
Chen, Yin-Yu |
|
2016 |
372 |
C |
p. 114-118 5 p. |
artikel |
6 |
Elastic photonuclear cross sections for bremsstrahlung from relativistic ions
|
Mikkelsen, Rune E. |
|
2016 |
372 |
C |
p. 58-66 9 p. |
artikel |
7 |
Geant4.10 simulation of geometric model for metaphase chromosome
|
Rafat-Motavalli, L. |
|
2016 |
372 |
C |
p. 7-13 7 p. |
artikel |
8 |
Inelastic cross-sections and energy loss properties by non-relativistic heavy ions in zirconium dioxide
|
Schofield, Jennifer |
|
2016 |
372 |
C |
p. 119-126 8 p. |
artikel |
9 |
In situ X-ray diffraction study of irradiation-induced lattice expansion in Al foils by MeV-energy heavy ions
|
Minagawa, Hideaki |
|
2016 |
372 |
C |
p. 38-43 6 p. |
artikel |
10 |
Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy
|
Kada, W. |
|
2016 |
372 |
C |
p. 151-155 5 p. |
artikel |
11 |
K-, L- and M-shell X-ray productions induced by argon ions in the 0.8–1.6MeV/amu range
|
Gluchshenko, N. |
|
2016 |
372 |
C |
p. 1-6 6 p. |
artikel |
12 |
Lattice structure transformation and change in surface hardness of Ni3Nb and Ni3Ta intermetallic compounds induced by energetic ion beam irradiation
|
Kojima, H. |
|
2016 |
372 |
C |
p. 72-77 6 p. |
artikel |
13 |
Measurements of proton induced γ-ray emission cross-sections on Mg from 1.0 to 3.0MeV
|
Sharifzadeh, N. |
|
2016 |
372 |
C |
p. 109-113 5 p. |
artikel |
14 |
Multiple-electron losses in uranium ion beams in heavy ion synchrotrons
|
Bozyk, L. |
|
2016 |
372 |
C |
p. 102-108 7 p. |
artikel |
15 |
Papers arising from IAEA Coordinated Research Project “Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators” (F11016)
|
Vittone, Ettore |
|
2016 |
372 |
C |
p. 127- 1 p. |
artikel |
16 |
Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation
|
Hu, P.P. |
|
2016 |
372 |
C |
p. 29-37 9 p. |
artikel |
17 |
Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications
|
Mu, Yifei |
|
2016 |
372 |
C |
p. 14-28 15 p. |
artikel |
18 |
Simulation of Auger electron emission from nanometer-size gold targets using the Geant4 Monte Carlo simulation toolkit
|
Incerti, S. |
|
2016 |
372 |
C |
p. 91-101 11 p. |
artikel |
19 |
Simulation of photofission experiments at the ELI-NP facility
|
Constantin, P. |
|
2016 |
372 |
C |
p. 78-85 8 p. |
artikel |
20 |
The effect of electron beam irradiation on silver–sodium ion exchange in silicate glasses
|
Sidorov, Alexander I. |
|
2016 |
372 |
C |
p. 44-49 6 p. |
artikel |
21 |
The evaluation of radiation damage parameter for CVD diamond
|
Grilj, V. |
|
2016 |
372 |
C |
p. 161-164 4 p. |
artikel |
22 |
The influence of the mean charge state on the Coulomb heating of fast diclusters through the Si〈111〉 direction
|
Nascimento, C.D. |
|
2016 |
372 |
C |
p. 86-90 5 p. |
artikel |
23 |
Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy
|
Lamhamdi, M. |
|
2016 |
372 |
C |
p. 67-71 5 p. |
artikel |
24 |
Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range
|
Capan, I. |
|
2016 |
372 |
C |
p. 156-160 5 p. |
artikel |