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                             24 results found
no title author magazine year volume issue page(s) type
1 Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment Vittone, E.
2016
372 C p. 128-142
15 p.
article
2 Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons Garcia Lopez, J.
2016
372 C p. 143-150
8 p.
article
3 Editorial board 2016
372 C p. IFC-
1 p.
article
4 Effects of swift heavy ion irradiation on dielectric relaxation and conduction mechanism in Ba0.90Sr0.10TiO3 Mohan, C.R.K.
2016
372 C p. 50-57
8 p.
article
5 Effects of thermal annealing on photoluminescence of Si+/C+ implanted SiO2 films Chen, Yin-Yu
2016
372 C p. 114-118
5 p.
article
6 Elastic photonuclear cross sections for bremsstrahlung from relativistic ions Mikkelsen, Rune E.
2016
372 C p. 58-66
9 p.
article
7 Geant4.10 simulation of geometric model for metaphase chromosome Rafat-Motavalli, L.
2016
372 C p. 7-13
7 p.
article
8 Inelastic cross-sections and energy loss properties by non-relativistic heavy ions in zirconium dioxide Schofield, Jennifer
2016
372 C p. 119-126
8 p.
article
9 In situ X-ray diffraction study of irradiation-induced lattice expansion in Al foils by MeV-energy heavy ions Minagawa, Hideaki
2016
372 C p. 38-43
6 p.
article
10 Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy Kada, W.
2016
372 C p. 151-155
5 p.
article
11 K-, L- and M-shell X-ray productions induced by argon ions in the 0.8–1.6MeV/amu range Gluchshenko, N.
2016
372 C p. 1-6
6 p.
article
12 Lattice structure transformation and change in surface hardness of Ni3Nb and Ni3Ta intermetallic compounds induced by energetic ion beam irradiation Kojima, H.
2016
372 C p. 72-77
6 p.
article
13 Measurements of proton induced γ-ray emission cross-sections on Mg from 1.0 to 3.0MeV Sharifzadeh, N.
2016
372 C p. 109-113
5 p.
article
14 Multiple-electron losses in uranium ion beams in heavy ion synchrotrons Bozyk, L.
2016
372 C p. 102-108
7 p.
article
15 Papers arising from IAEA Coordinated Research Project “Utilization of ion accelerators for studying and modelling of radiation induced defects in semiconductors and insulators” (F11016) Vittone, Ettore
2016
372 C p. 127-
1 p.
article
16 Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation Hu, P.P.
2016
372 C p. 29-37
9 p.
article
17 Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications Mu, Yifei
2016
372 C p. 14-28
15 p.
article
18 Simulation of Auger electron emission from nanometer-size gold targets using the Geant4 Monte Carlo simulation toolkit Incerti, S.
2016
372 C p. 91-101
11 p.
article
19 Simulation of photofission experiments at the ELI-NP facility Constantin, P.
2016
372 C p. 78-85
8 p.
article
20 The effect of electron beam irradiation on silver–sodium ion exchange in silicate glasses Sidorov, Alexander I.
2016
372 C p. 44-49
6 p.
article
21 The evaluation of radiation damage parameter for CVD diamond Grilj, V.
2016
372 C p. 161-164
4 p.
article
22 The influence of the mean charge state on the Coulomb heating of fast diclusters through the Si〈111〉 direction Nascimento, C.D.
2016
372 C p. 86-90
5 p.
article
23 Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy Lamhamdi, M.
2016
372 C p. 67-71
5 p.
article
24 Vacancy-related defects in n-type Si implanted with a rarefied microbeam of accelerated heavy ions in the MeV range Capan, I.
2016
372 C p. 156-160
5 p.
article
                             24 results found
 
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