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                             70 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Annealing behavior of high temperature implanted Fe impurities in n-InP Cesca, T.
 2004
 216 C p. 105-109
5 p.
 artikel
2 Annealing of BaTiO3 thin films after heavy ion implantation Dietrich, M.
 2004
 216 C p. 110-115
6 p.
 artikel
3 A positron beam study of hydrogen confined in nano-cavities in crystalline silicon Schut, H
 2004
 216 C p. 251-256
6 p.
 artikel
4 A simple model for boron trapping by He implantation extended defects in Si: the role of boron diffusivity Cayrel, F.
 2004
 216 C p. 291-296
6 p.
 artikel
5 Atomistic analysis of the ion beam induced defect evolution Aboy, Maria
 2004
 216 C p. 100-104
5 p.
 artikel
6 Atomistic modeling of ion beam induced amorphization in silicon Pelaz, Lourdes
 2004
 216 C p. 41-45
5 p.
 artikel
7 Author index 2004
 216 C p. 415-423
9 p.
 artikel
8 Buried silicon dioxide formation in a precursor nanocavity layer in Si van Veen, A.
 2004
 216 C p. 264-268
5 p.
 artikel
9 Cathodoluminescence of α-quartz after hot Ge ion irradiation Sahoo, P.K.
 2004
 216 C p. 324-328
5 p.
 artikel
10 Chemically guided epitaxy of Rb-ion amorphized α-quartz: the roles of Rb and oxygen Gąsiorek, S.
 2004
 216 C p. 62-66
5 p.
 artikel
11 Combinatorial ion implantation – a smart technique applied to synthesize CdSe-nanocrystals Großhans, I.
 2004
 216 C p. 396-401
6 p.
 artikel
12 Comparative analysis of the implantation-induced structural modifications in GaAs and Ge Desnica-Frankovic, I.D.
 2004
 216 C p. 318-323
6 p.
 artikel
13 Comparison of thermally and mechanically induced Si layer transfer in hydrogen-implanted Si wafers Höchbauer, T.
 2004
 216 C p. 257-263
7 p.
 artikel
14 Contents 2004
 216 C p. ix-xii
nvt p.
 artikel
15 Coupling of atom-by-atom calculations of extended defects with B kick-out equations: application to the simulation of boron ted Lampin, E.
 2004
 216 C p. 95-99
5 p.
 artikel
16 Damage accumulation and dopant migration during shallow As and Sb implantation into Si Werner, M.
 2004
 216 C p. 67-74
8 p.
 artikel
17 Depth dependence of defect evolution and TED during annealing Colombeau, B.
 2004
 216 C p. 90-94
5 p.
 artikel
18 Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy De Salvador, D.
 2004
 216 C p. 286-290
5 p.
 artikel
19 Diffusion simulations of boron implanted at low energy (500 eV) in crystalline silicon Ihaddadene-Le Coq, L.
 2004
 216 C p. 303-307
5 p.
 artikel
20 Direct evidence of the recombination of silicon interstitial atoms at the silicon surface Lamrani, Y.
 2004
 216 C p. 281-285
5 p.
 artikel
21 Direct ion beam synthesis of II–VI nanocrystals Desnica, U.V
 2004
 216 C p. 407-413
7 p.
 artikel
22 Editorial board 2004
 216 C p. IFC-
1 p.
 artikel
23 Effect of diffusion on ion beam-synthesized PbS nanocrystals Espiau de Lamaestre, R.
 2004
 216 C p. 402-406
5 p.
 artikel
24 Effect of substrate orientation on defect generation and annealing behaviour in carbon implanted silicon Häberlen, M.
 2004
 216 C p. 36-40
5 p.
 artikel
25 Electroluminescence properties of SiO x layers implanted with rare earth ions Irrera, A.
 2004
 216 C p. 222-227
6 p.
 artikel
26 Ellipsometric spectroscopy study of Ar ion-beam mixed SiO2/Si/SiO2 layers Kim, H.B.
 2004
 216 C p. 367-371
5 p.
 artikel
27 Elongated Co nanoparticles induced by swift heavy ion irradiations D’Orléans, C.
 2004
 216 C p. 372-378
7 p.
 artikel
28 Finite size effects in phase transformation kinetics in thin films and surface layers Trofimov, Vladimir I.
 2004
 216 C p. 334-339
6 p.
 artikel
29 Fluence dependence and thermal stability of defects in helium-implanted cubic zirconia Saudé, S.
 2004
 216 C p. 156-160
5 p.
 artikel
30 Formation and dissociation of Zn nanoclusters in MgO van Huis, M.A.
 2004
 216 C p. 390-395
6 p.
 artikel
31 Formation, growth and dissociation of He bubbles in Al2O3 van Huis, M.A.
 2004
 216 C p. 149-155
7 p.
 artikel
32 Formation of CdSe nanoclusters in MgO by ion beam synthesis van Huis, M.A.
 2004
 216 C p. 121-126
6 p.
 artikel
33 FTIR and Vis–FUV real time spectroscopic ellipsometry studies of polymer surface modifications during ion beam bombardment Laskarakis, A.
 2004
 216 C p. 131-136
6 p.
 artikel
34 Helium diffusion in metals investigated by nuclear reaction analysis Flament, J.L.
 2004
 216 C p. 161-166
6 p.
 artikel
35 Ion beam induced coherent displacement in Al on Au system Peltola, J
 2004
 216 C p. 308-312
5 p.
 artikel
36 Ion-beam induced defects and nanoscale amorphous clusters in silicon carbide Weber, W.J
 2004
 216 C p. 25-35
11 p.
 artikel
37 Ion beam induced defects in crystalline silicon Cristiano, F
 2004
 216 C p. 46-56
11 p.
 artikel
38 Ion-beam induced modification of pores array in anodic alumina Cherenda, N.N.
 2004
 216 C p. 340-345
6 p.
 artikel
39 Ion beam synthesis of Co nanoparticles in SiO2: Monte Carlo simulation Cerruti, C.
 2004
 216 C p. 329-333
5 p.
 artikel
40 Ion bombardment induced morphology modifications on self-organized semiconductor surfaces Hofer, C.
 2004
 216 C p. 178-184
7 p.
 artikel
41 Ion induced precipitation of metal particles in triethoxysilane for optical and magnetic applications Pivin, J.C.
 2004
 216 C p. 239-244
6 p.
 artikel
42 Irradiation effects in carbon nanotubes Krasheninnikov, A.V.
 2004
 216 C p. 355-366
12 p.
 artikel
43 Magnetic modifications of thin CoFe films induced by Xe+-ion irradiation Gupta, Ratnesh
 2004
 216 C p. 350-354
5 p.
 artikel
44 Mechanical properties of pulsed laser-deposited hydroxyapatite thin film implanted at high energy with N+ and Ar+ ions. Part I: nanoindentation with spherical tipped indenter Pelletier, H.
 2004
 216 C p. 269-274
6 p.
 artikel
45 Mechanical properties of pulsed laser-deposited hydroxyapatite thin films implanted at high energy with N+ and Ar+ ions. Part II: nano-scratch tests with spherical tipped indenter Pelletier, H.
 2004
 216 C p. 275-280
6 p.
 artikel
46 Microstructure of β-FeSi2 buried layers synthesis by ion implantation Ayache, R.
 2004
 216 C p. 137-142
6 p.
 artikel
47 Microstructure of N+ ion beam induced epitaxial crystallized Si Sahoo, P.K.
 2004
 216 C p. 313-317
5 p.
 artikel
48 Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications Normand, P.
 2004
 216 C p. 228-238
11 p.
 artikel
49 Nitrogen distribution during oxidation of low and medium energy nitrogen-implanted silicon Skarlatos, D.
 2004
 216 C p. 75-79
5 p.
 artikel
50 n-ZnO/p-Si photodiodes fully isolated by B+ ion-implantation Park, C.H.
 2004
 216 C p. 127-130
4 p.
 artikel
51 Optical and electrical properties of Si-nanocrystals ion beam synthesized in SiO2 Garrido, B.
 2004
 216 C p. 213-221
9 p.
 artikel
52 Optical study of Si nanocrystals in Si/SiO2 layers by spectroscopic ellipsometry En Naciri, A.
 2004
 216 C p. 167-172
6 p.
 artikel
53 Optimization of InGaAs/InP MHBT and HBT’s technology: control and modeling of beryllium diffusion phenomena Ihaddadene-Lenglet, M.
 2004
 216 C p. 297-302
6 p.
 artikel
54 Physical properties and structure of thin ion-beam modified polymer films Guenther, M
 2004
 216 C p. 143-148
6 p.
 artikel
55 Roughness evolution of some X-UV reflective materials induced by low energy (<1 keV) ion beam milling Gailly, P
 2004
 216 C p. 206-212
7 p.
 artikel
56 Self-interstitial diffusion and clustering with impurities in crystalline silicon Mirabella, S.
 2004
 216 C p. 80-89
10 p.
 artikel
57 Slow highly charged ions for nanoscale surface modifications Kentsch, U
 2004
 216 C p. 196-201
6 p.
 artikel
58 Sputtering of binary crystal surface under grazing ion bombardment Dzhurakhalov, A.A.
 2004
 216 C p. 202-205
4 p.
 artikel
59 Structural and magnetic properties of Fe–Al silica composites prepared by sequential ion implantation de Julián Fernández, C.
 2004
 216 C p. 245-250
6 p.
 artikel
60 Surface modification with gas cluster ion beams from fundamental characteristics to applications Toyoda, N.
 2004
 216 C p. 379-389
11 p.
 artikel
61 Surface smoothing with large current cluster ion beam Seki, T.
 2004
 216 C p. 191-195
5 p.
 artikel
62 Surface structure dependence of impact processes of gas cluster ions Aoki, Takaaki
 2004
 216 C p. 185-190
6 p.
 artikel
63 Symposium E on Ion Beams for Nanoscale Surface Modifications Claverie, A.
 2004
 216 C p. vii-viii
nvt p.
 artikel
64 The laser annealing induced phase transition in silicon: a molecular dynamics study Marqués, Luis A.
 2004
 216 C p. 57-61
5 p.
 artikel
65 Thermal evolution of {113} defects in silicon: transformation against dissolution Calvo, P
 2004
 216 C p. 173-177
5 p.
 artikel
66 The shape and ordering of self-organized nanostructures by ion sputtering Frost, F.
 2004
 216 C p. 9-19
11 p.
 artikel
67 Thick elevation of silicon on patterned structure using ion implantation induced selective etching Huda, M.Q.
 2004
 216 C p. 20-24
5 p.
 artikel
68 Track formation and fabrication of nanostructures with MeV-ion beams Toulemonde, M
 2004
 216 C p. 1-8
8 p.
 artikel
69 Visible photoluminescence from Si ion-beam-mixed SiO2/Si/SiO2 layers deposited by e-beam evaporation Son, J.H.
 2004
 216 C p. 346-349
4 p.
 artikel
70 ZnTe nanoparticles formed by ion implantation in a SiO2 layer on silicon Chemam, R.
 2004
 216 C p. 116-120
5 p.
 artikel
                             70 gevonden resultaten
 
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