| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Anisotropic surface diffusion at crystal facet transitions during localized Ga-In-As-P growth by MOMBE
|
Wachter, M.
|
|
|
28 |
8-10 |
p. 841-848
|
artikel
|
| 2 |
Application of high-resolution X-ray diffractornetry to the structural study of epitaxial multilayers on novel index surfaces
|
Sanz-Hervás, A.
|
|
|
28 |
8-10 |
p. 777-784
|
artikel
|
| 3 |
Charge accumulation effects in InGaAs/GaAs [111]-oriented piezoelectric multiple quantum wells
|
Sánchez-Rojas, J.L.
|
|
|
28 |
8-10 |
p. 767-775
|
artikel
|
| 4 |
Comparison between theory and experiment in T-shaped quantum well wires
|
Brinkmann, Dirk
|
|
|
28 |
8-10 |
p. 1037-1041
|
artikel
|
| 5 |
Computer simulation of the growth of heterostructure systems
|
Rouhani, M.Djafari
|
|
|
28 |
8-10 |
p. 1043-1049
|
artikel
|
| 6 |
Critical thickness and relaxation of (111) oriented strained epitaxial layers
|
Colson, H.G.
|
|
|
28 |
8-10 |
p. 785-794
|
artikel
|
| 7 |
Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition
|
Son, Chang-Sik
|
|
|
28 |
8-10 |
p. 1051-1056
|
artikel
|
| 8 |
Epitaxial layer morphology of highly strained GaInAs/InP multiple quantum well structures grown by CBE
|
Nlarschner, T.
|
|
|
28 |
8-10 |
p. 849-855
|
artikel
|
| 9 |
Facet formation and characterization of III–V structures grown on patterned surfaces
|
Heinecke, H.
|
|
|
28 |
8-10 |
p. 803-815
|
artikel
|
| 10 |
Formation of InP-based quantum structures by selective MBE on patterned substrates having high-index facets
|
Hasegawa, Hideki
|
|
|
28 |
8-10 |
p. 887-901
|
artikel
|
| 11 |
GaInAs/InP quantum wires grown by metalorganic vapor phase epitaxy on V-grooved InP substrates
|
Geiger, M.
|
|
|
28 |
8-10 |
p. 903-908
|
artikel
|
| 12 |
Geometric and electronic structure of molecular beam epitaxy-prepared GaAs (112) and (113) surfaces
|
Platen, J.
|
|
|
28 |
8-10 |
p. 969-976
|
artikel
|
| 13 |
Growth by selective area epitaxy on patterned substrates and characterization of GaInAs/InP nanostructures
|
Roth, A.P.
|
|
|
28 |
8-10 |
p. 909-913
|
artikel
|
| 14 |
High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy
|
Mayo, E.
|
|
|
28 |
8-10 |
p. 727-734
|
artikel
|
| 15 |
InAsP/GaInP strained multilayers grown by MOVPE on (001), (113)B and (110) InP substrates: the role of the surface characteristics
|
Ponchet, A.
|
|
|
28 |
8-10 |
p. 857-863
|
artikel
|
| 16 |
Incorporation behaviour of carbon and silicon on (100) and (111) surfaces during growth of GaAs/GaAs and Ga0.47In0.53As/InP by molecular beam epitaxy
|
Schneider, J.M.
|
|
|
28 |
8-10 |
p. 977-983
|
artikel
|
| 17 |
Influence of arsenic incorporation on surface morphology and Si doping in GaAs(110) homoepitaxy
|
Tok, E.S.
|
|
|
28 |
8-10 |
p. 833-839
|
artikel
|
| 18 |
Introduction to the 2nd international workshop on growth, characterization and exploitation of epitaxial compound semiconductor on novel index surfaces (NIS '96)
|
Henini, Mohamed
|
|
|
28 |
8-10 |
p. 703-705
|
artikel
|
| 19 |
Is the be incorporation the same in (311)A and (100) AlGaAs?
|
Galbiati, N.
|
|
|
28 |
8-10 |
p. 993-998
|
artikel
|
| 20 |
Lateral tunneling transistors fabricated by plane-dependent Si-doping in nonplanar epitaxy on GaAs (311)A and (411)A substrates
|
Ohnishi, Hajime
|
|
|
28 |
8-10 |
p. 1025-1029
|
artikel
|
| 21 |
MBE growth of AlGaAs/GaAs double- heterostructure light emitting diodes on GaAs(111)A and (211)A substrates using all-silicon doping
|
Fujita, K.
|
|
|
28 |
8-10 |
p. 1019-1023
|
artikel
|
| 22 |
Memory effects on piezoelectric InGaAs/GaAs MQW PIN diodes
|
Valtueña, J.F.
|
|
|
28 |
8-10 |
p. 757-765
|
artikel
|
| 23 |
1.3 μm lasers on GaAs(111)B employing ordered (InAs)1(GaAs)1 quantum wells for high frequency response applications
|
Greenberg, Joseph
|
|
|
28 |
8-10 |
p. 947-955
|
artikel
|
| 24 |
News and features in device applications, processes, and materials, being applied in today's microelectronics industry
|
|
|
|
28 |
8-10 |
p. i-xxiv
|
artikel
|
| 25 |
Novel piezoelectric-barrier heterostructure for all-optical light modulation
|
Pelekanos, N.T.
|
|
|
28 |
8-10 |
p. 1057-1061
|
artikel
|
| 26 |
Optical characterization of highly mismatched InP/GaAs(l11)B epitaxial heterostructures
|
Derbali, M.B.
|
|
|
28 |
8-10 |
p. 1005-1009
|
artikel
|
| 27 |
Optical investigation of piezoelectric field effects on excitonic properties in (111)B-grown (In, Ga)As/GaAs quantum wells
|
Ballet, P.
|
|
|
28 |
8-10 |
p. 735-741
|
artikel
|
| 28 |
Photoluminescence investigation of Si-doped GaAs grown by molecular beam epitaxy on non-(100) oriented surfaces
|
Pavesi, L.
|
|
|
28 |
8-10 |
p. 717-726
|
artikel
|
| 29 |
Piezoelectric effect in micromachined [001] quantum wells: Theoretical aspects
|
Rincón, R.
|
|
|
28 |
8-10 |
p. 1031-1035
|
artikel
|
| 30 |
Piezoelectric effects in strained layer heterostructures grown on novel index substrates
|
Smith, D.L.
|
|
|
28 |
8-10 |
p. 707-715
|
artikel
|
| 31 |
Piezoelectricity and carrier dynamics in In0·2Ga0·8As/GaAs single quantum wells grown on (n11)A-oriented GaAs (n=1, 2, 3)
|
Vaccaro, Pablo O.
|
|
|
28 |
8-10 |
p. 749-755
|
artikel
|
| 32 |
RHEED and STM study of the two-dimensional growth of InAs on GaAs (111)A
|
Yamaguchi, H.
|
|
|
28 |
8-10 |
p. 825-831
|
artikel
|
| 33 |
Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy
|
Sano, Eriko
|
|
|
28 |
8-10 |
p. 743-747
|
artikel
|
| 34 |
Self-organization of nanostructures on planar and patterned high-index semiconductor surfaces
|
Nötzel, Richard
|
|
|
28 |
8-10 |
p. 875-885
|
artikel
|
| 35 |
Self-organization of quantum wire-like morphology on In x Ga1 − xAs single quantum wells grown on (100)InP vicinal surfaces depending on the substrate misorientation, buffer mismatch and growth temperature
|
Peiró, F.
|
|
|
28 |
8-10 |
p. 865-873
|
artikel
|
| 36 |
Spatially resolved optical spectroscopy of GaAs islands on InAs (111)
|
Groenen, J.
|
|
|
28 |
8-10 |
p. 939-945
|
artikel
|
| 37 |
Spatially resolved Raman investigation of Si-doped GaAs layers on patterned GaAs(100) substrates grown by molecular beam epitaxy
|
Gerster, J.
|
|
|
28 |
8-10 |
p. 985-992
|
artikel
|
| 38 |
Strained layer piezoelectric semiconductor devices
|
Rees, G.J.
|
|
|
28 |
8-10 |
p. 957-967
|
artikel
|
| 39 |
Structural and optical characterization of self-assembled InAs-GaAs quantum dots grown on high index surfaces
|
Henini, M.
|
|
|
28 |
8-10 |
p. 933-938
|
artikel
|
| 40 |
Structural characterization of InGaAs/InAlAs quantum wells grown on 0 (111)-InP substrates
|
Vilà, A.
|
|
|
28 |
8-10 |
p. 999-1003
|
artikel
|
| 41 |
The growth of (InGa)As quantum wells on GaAs(111)A, (211)A and (311)A substrates
|
Fahy, M.
|
|
|
28 |
8-10 |
p. 1011-1018
|
artikel
|
| 42 |
The physics and fabrication of in situ back-gated (311)A hole gas heterojunctions
|
Simmons, M.Y.
|
|
|
28 |
8-10 |
p. 795-801
|
artikel
|
| 43 |
Three-dimensional arrays of self-ordered quantum dots for laser applications
|
Ledentsov, N.N.
|
|
|
28 |
8-10 |
p. 915-931
|
artikel
|
| 44 |
Transport and optics in quantum wires fabricated by MBE overgrowth on the (110) cleaved edge
|
Pfeiffer, L.
|
|
|
28 |
8-10 |
p. 817-823
|
artikel
|
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