nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
1 |
Acceleration factor for ageing measurement of dye solar cells
|
Ciammaruchi, Laura |
|
2013 |
53 |
2 |
p. 279-281 3 p. |
artikel |
2 |
Advances in ESD protection for ICs
|
Vassilev, Vesselin |
|
2013 |
53 |
2 |
p. 183- 1 p. |
artikel |
3 |
Analysis of fluid/structure interaction: Influence of silicon chip thickness in moulded packaging
|
Khor, C.Y. |
|
2013 |
53 |
2 |
p. 334-347 14 p. |
artikel |
4 |
An on-chip sensor to measure and compensate static NBTI-induced degradation in analog circuits
|
Askari, Syed |
|
2013 |
53 |
2 |
p. 245-253 9 p. |
artikel |
5 |
Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs
|
Ning, Bingxu |
|
2013 |
53 |
2 |
p. 259-264 6 p. |
artikel |
6 |
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation
|
Monnereau, N. |
|
2013 |
53 |
2 |
p. 221-228 8 p. |
artikel |
7 |
Effect of electroplating layer structure on shear property and microstructure of multilayer electroplated Sn–3.5Ag solder bumps
|
Zhao, Qinghua |
|
2013 |
53 |
2 |
p. 321-326 6 p. |
artikel |
8 |
Effects of ‘Latent Damage’ on pad cratering: Reduction in life and a potential change in failure mode
|
Raghavan, Venkatesh Arasanipalai |
|
2013 |
53 |
2 |
p. 303-313 11 p. |
artikel |
9 |
Electrostatic discharge (ESD) protection of N-type silicon controlled rectifier with P-type MOSFET pass structure for high voltage operating I/O application
|
Kim, Kil-Ho |
|
2013 |
53 |
2 |
p. 205-207 3 p. |
artikel |
10 |
Estimation and visualization of the fatigue life of Pb-free SAC solder bump joints under thermal cycling
|
Tohmyoh, Hironori |
|
2013 |
53 |
2 |
p. 314-320 7 p. |
artikel |
11 |
Experimental evaluation of hot electron reliability on differential Clapp-VCO
|
Jang, S.L. |
|
2013 |
53 |
2 |
p. 254-258 5 p. |
artikel |
12 |
HBM tester waveforms, equivalent circuits, and socket capacitance
|
Maloney, Timothy J. |
|
2013 |
53 |
2 |
p. 184-189 6 p. |
artikel |
13 |
Inside front cover - Editorial board
|
|
|
2013 |
53 |
2 |
p. IFC- 1 p. |
artikel |
14 |
Interdiffusion at the interface between Sn-based solders and Cu substrate
|
Yang, Yang |
|
2013 |
53 |
2 |
p. 327-333 7 p. |
artikel |
15 |
Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off
|
Zhou, Luowei |
|
2013 |
53 |
2 |
p. 282-287 6 p. |
artikel |
16 |
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter
|
Gautam, Rajni |
|
2013 |
53 |
2 |
p. 236-244 9 p. |
artikel |
17 |
Pitfalls for CDM calibration procedures
|
Smedes, T. |
|
2013 |
53 |
2 |
p. 190-195 6 p. |
artikel |
18 |
PMOS-based power-rail ESD clamp circuit with adjustable holding voltage controlled by ESD detection circuit
|
Yeh, Chih-Ting |
|
2013 |
53 |
2 |
p. 208-214 7 p. |
artikel |
19 |
Secondary ESD clamp circuit for CDM protection of over 6Gbit/s SerDes application in 40nm CMOS
|
Okushima, Mototsugu |
|
2013 |
53 |
2 |
p. 215-220 6 p. |
artikel |
20 |
Stability of pentacene transistors under concomitant influence of water vapor and bias stress
|
Tardy, Jacques |
|
2013 |
53 |
2 |
p. 274-278 5 p. |
artikel |
21 |
Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32nm and beyond
|
Fiori, Vincent |
|
2013 |
53 |
2 |
p. 229-235 7 p. |
artikel |
22 |
Study of factors affecting warpage of HFCBGA subjected to reflow soldering-liked profile
|
Wang, Tong Hong |
|
2013 |
53 |
2 |
p. 297-302 6 p. |
artikel |
23 |
The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET
|
Yeh, Wen-Kuan |
|
2013 |
53 |
2 |
p. 265-269 5 p. |
artikel |
24 |
The wire sag problem in wire bonding technology for semiconductor packaging
|
Kung, Huang-Kuang |
|
2013 |
53 |
2 |
p. 288-296 9 p. |
artikel |
25 |
vfTLP-VTH: A new method for quantifying the effectiveness of ESD protection for the CDM classification test
|
Zhou, Yuanzhong |
|
2013 |
53 |
2 |
p. 196-204 9 p. |
artikel |
26 |
Voltage and current stress induced variations in TiN/HfSi x O y /TiN MIM capacitors
|
Misra, D. |
|
2013 |
53 |
2 |
p. 270-273 4 p. |
artikel |