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                             26 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Acceleration factor for ageing measurement of dye solar cells Ciammaruchi, Laura
2013
53 2 p. 279-281
3 p.
artikel
2 Advances in ESD protection for ICs Vassilev, Vesselin
2013
53 2 p. 183-
1 p.
artikel
3 Analysis of fluid/structure interaction: Influence of silicon chip thickness in moulded packaging Khor, C.Y.
2013
53 2 p. 334-347
14 p.
artikel
4 An on-chip sensor to measure and compensate static NBTI-induced degradation in analog circuits Askari, Syed
2013
53 2 p. 245-253
9 p.
artikel
5 Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs Ning, Bingxu
2013
53 2 p. 259-264
6 p.
artikel
6 Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation Monnereau, N.
2013
53 2 p. 221-228
8 p.
artikel
7 Effect of electroplating layer structure on shear property and microstructure of multilayer electroplated Sn–3.5Ag solder bumps Zhao, Qinghua
2013
53 2 p. 321-326
6 p.
artikel
8 Effects of ‘Latent Damage’ on pad cratering: Reduction in life and a potential change in failure mode Raghavan, Venkatesh Arasanipalai
2013
53 2 p. 303-313
11 p.
artikel
9 Electrostatic discharge (ESD) protection of N-type silicon controlled rectifier with P-type MOSFET pass structure for high voltage operating I/O application Kim, Kil-Ho
2013
53 2 p. 205-207
3 p.
artikel
10 Estimation and visualization of the fatigue life of Pb-free SAC solder bump joints under thermal cycling Tohmyoh, Hironori
2013
53 2 p. 314-320
7 p.
artikel
11 Experimental evaluation of hot electron reliability on differential Clapp-VCO Jang, S.L.
2013
53 2 p. 254-258
5 p.
artikel
12 HBM tester waveforms, equivalent circuits, and socket capacitance Maloney, Timothy J.
2013
53 2 p. 184-189
6 p.
artikel
13 Inside front cover - Editorial board 2013
53 2 p. IFC-
1 p.
artikel
14 Interdiffusion at the interface between Sn-based solders and Cu substrate Yang, Yang
2013
53 2 p. 327-333
7 p.
artikel
15 Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off Zhou, Luowei
2013
53 2 p. 282-287
6 p.
artikel
16 Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter Gautam, Rajni
2013
53 2 p. 236-244
9 p.
artikel
17 Pitfalls for CDM calibration procedures Smedes, T.
2013
53 2 p. 190-195
6 p.
artikel
18 PMOS-based power-rail ESD clamp circuit with adjustable holding voltage controlled by ESD detection circuit Yeh, Chih-Ting
2013
53 2 p. 208-214
7 p.
artikel
19 Secondary ESD clamp circuit for CDM protection of over 6Gbit/s SerDes application in 40nm CMOS Okushima, Mototsugu
2013
53 2 p. 215-220
6 p.
artikel
20 Stability of pentacene transistors under concomitant influence of water vapor and bias stress Tardy, Jacques
2013
53 2 p. 274-278
5 p.
artikel
21 Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32nm and beyond Fiori, Vincent
2013
53 2 p. 229-235
7 p.
artikel
22 Study of factors affecting warpage of HFCBGA subjected to reflow soldering-liked profile Wang, Tong Hong
2013
53 2 p. 297-302
6 p.
artikel
23 The impact of interface/border defect on performance and reliability of high-k/metal-gate CMOSFET Yeh, Wen-Kuan
2013
53 2 p. 265-269
5 p.
artikel
24 The wire sag problem in wire bonding technology for semiconductor packaging Kung, Huang-Kuang
2013
53 2 p. 288-296
9 p.
artikel
25 vfTLP-VTH: A new method for quantifying the effectiveness of ESD protection for the CDM classification test Zhou, Yuanzhong
2013
53 2 p. 196-204
9 p.
artikel
26 Voltage and current stress induced variations in TiN/HfSi x O y /TiN MIM capacitors Misra, D.
2013
53 2 p. 270-273
4 p.
artikel
                             26 gevonden resultaten
 
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