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                             24 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A study of the linearity between I on and log I off of modern MOS transistors and its application to stress engineering Lau, W.S.
2008
48 4 p. 497-503
7 p.
artikel
2 A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET Dai, M.Z.
2008
48 4 p. 504-507
4 p.
artikel
3 Board level solder joint reliability analysis of a fine pitch Cu post type wafer level package (WLP) Zhang, Xiaowu
2008
48 4 p. 602-610
9 p.
artikel
4 Characteristics of Sn8Zn3Bi solder joints and crack resistance with various PCB and lead coatings Lee, Young Woo
2008
48 4 p. 631-637
7 p.
artikel
5 Combining vibration test with finite element analysis for the fatigue life estimation of PBGA components Chen, Y.S.
2008
48 4 p. 638-644
7 p.
artikel
6 Degradation of n-channel a-Si:H/nc-Si:H bilayer thin-film transistors under DC electrical stress Arpatzanis, N.
2008
48 4 p. 531-536
6 p.
artikel
7 Deposition of aerosol (“hygroscopic dust”) on electronics – Mechanism and risk Tencer, Michal
2008
48 4 p. 584-593
10 p.
artikel
8 Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD You, A.H.
2008
48 4 p. 547-554
8 p.
artikel
9 Effect of surface finish material on printed circuit board for electrochemical migration Noh, Bo-In
2008
48 4 p. 652-656
5 p.
artikel
10 Effects of length scaling on electromigration in dual-damascene copper interconnects Lin, M.H.
2008
48 4 p. 569-577
9 p.
artikel
11 Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks Atanassova, E.
2008
48 4 p. 514-525
12 p.
artikel
12 Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric Li, C.X.
2008
48 4 p. 526-530
5 p.
artikel
13 Filler size and content effects on the composite properties of anisotropic conductive films (ACFs) and reliability of flip chip assembly using ACFs Hwang, J.S.
2008
48 4 p. 645-651
7 p.
artikel
14 Investigation of hot carrier degradation in asymmetric nDeMOS transistors Wang, Qingxue
2008
48 4 p. 508-513
6 p.
artikel
15 Leaky modes of optical waveguides with varied refractive index for microchip optical interconnect applications – Asymptotic solutions Zhu, Jianxin
2008
48 4 p. 555-562
8 p.
artikel
16 [No title] Stojcev, Mile
2008
48 4 p. 659-660
2 p.
artikel
17 [No title] Stojcev, Mile
2008
48 4 p. 661-662
2 p.
artikel
18 [No title] Stojcev, Mile
2008
48 4 p. 657-658
2 p.
artikel
19 Numerical and experimental analysis of EMI effects on circuits with MESFET devices Tsai, Han-Chang
2008
48 4 p. 537-546
10 p.
artikel
20 Temperature-dependent stress-induced voiding in dual-damascene Cu interconnects Wu, ZhenYu
2008
48 4 p. 578-583
6 p.
artikel
21 The influence of solder volume and pad area on Sn–3.8Ag–0.7Cu and Ni UBM reaction in reflow soldering and isothermal aging Wong, C.K.
2008
48 4 p. 611-621
11 p.
artikel
22 Theoretical and numerical analysis of the effect of constant velocity on thermosonic bond strength He, Jun
2008
48 4 p. 594-601
8 p.
artikel
23 Thermal fatigue endurance of collapsible 95.5Sn4Ag0.5Cu spheres in LTCC/PWB assemblies Nousiainen, O.
2008
48 4 p. 622-630
9 p.
artikel
24 Thermal impedance measurements under non-equilibrium conditions. How to extend its validity Masana, F.N.
2008
48 4 p. 563-568
6 p.
artikel
                             24 gevonden resultaten
 
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