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  A study of the linearity between I on and log I off of modern MOS transistors and its application to stress engineering
 
 
Title: A study of the linearity between I on and log I off of modern MOS transistors and its application to stress engineering
Author: Lau, W.S.
Yang, Peizhen
Eng, C.W.
Ho, V.
Loh, C.H.
Siah, S.Y.
Vigar, D.
Chan, L.
Appeared in: Microelectronics reliability
Paging: Volume 48 (2008) nr. 4 pages 7 p.
Year: 2008
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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