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                             22 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 A dual burn-in policy for defect-tolerant memory products using the number of repairs as a quality indicator Tong, Seung-Hoon
2008
48 3 p. 471-480
10 p.
artikel
2 A junction characterization for microelectronic devices quality and reliability Tazibt, W.
2008
48 3 p. 348-353
6 p.
artikel
3 A new model of subthreshold swing for sub-100nm MOSFETs Yang, Lin-An
2008
48 3 p. 342-347
6 p.
artikel
4 Assessment of temperature and voltage accelerating factors for 2.3–3.2nm SiO2 thin oxides stressed to hard breakdown Pic, D.
2008
48 3 p. 335-341
7 p.
artikel
5 Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering Yang, Ping-Feng
2008
48 3 p. 389-394
6 p.
artikel
6 Characterization of semiconductor interfaces using a modified mixed mode bending apparatus Thijsse, J.
2008
48 3 p. 401-407
7 p.
artikel
7 Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures Tinoco, J.C.
2008
48 3 p. 370-381
12 p.
artikel
8 dc-Conduction mechanism in lanthanum–manganese oxide films grown on p-Si substrate Dakhel, A.A.
2008
48 3 p. 395-400
6 p.
artikel
9 Effect of primary creep and plasticity in the modeling of thermal fatigue of SnPb and SnAgCu solder joints Shirley, Dwayne R.
2008
48 3 p. 455-470
16 p.
artikel
10 Effect of process-induced voids on isothermal fatigue resistance of CSP lead-free solder joints Yu, Qiang
2008
48 3 p. 431-437
7 p.
artikel
11 Experimental verification of models for underfill flow driven by capillary forces in flip-chip packaging Wan, J.W.
2008
48 3 p. 425-430
6 p.
artikel
12 Extraction of interface states at emitter–base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation Kim, Se Woon
2008
48 3 p. 382-388
7 p.
artikel
13 Growth behavior of Cu/Al intermetallic compounds and cracks in copper ball bonds during isothermal aging Hang, C.J.
2008
48 3 p. 416-424
9 p.
artikel
14 Impact of single pMOSFET dielectric degradation on NAND circuit performance Estrada, D.
2008
48 3 p. 354-363
10 p.
artikel
15 [No title] Stojcev, Mile
2008
48 3 p. 494-495
2 p.
artikel
16 [No title] Stojcev, Mile
2008
48 3 p. 490-491
2 p.
artikel
17 [No title] Stojcev, Mile
2008
48 3 p. 492-493
2 p.
artikel
18 Quantification of creep strain in small lead-free solder joints with the in situ micro electronic-resistance measurement Jiang, Li
2008
48 3 p. 438-444
7 p.
artikel
19 Reliability evaluation of BOAC and normal pad stacked-chip packaging using low-K wafers Chen, K.M.
2008
48 3 p. 408-415
8 p.
artikel
20 Reliability functions estimated from commonly used yield models Kim, Kyungmee O.
2008
48 3 p. 481-489
9 p.
artikel
21 Suppression of Ge–O and Ge–N bonding at Ge–HfO2 and Ge–TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices Lee, S.
2008
48 3 p. 364-369
6 p.
artikel
22 Thermal transient characteristics of die attach in high power LED PKG Kim, Hyun-Ho
2008
48 3 p. 445-454
10 p.
artikel
                             22 gevonden resultaten
 
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