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                             78 gevonden resultaten
nr titel auteur tijdschrift jaar jaarg. afl. pagina('s) type
1 Analysis of high-power devices using proton beam induced charge microscopy Zmeck, M.
 2001
 41 9-10 p. 1519-1524
6 p.
 artikel
2 Analysis of retention tail distribution induced by scaled shallow trench isolation for high densityDRAMs Pil Kim, Young
 2001
 41 9-10 p. 1301-1305
5 p.
 artikel
3 A New Versatile Testing Interface for Failure Analysis in Integrated Circuits Desplats, Romain
 2001
 41 9-10 p. 1495-1499
5 p.
 artikel
4 An Extrapolation Model for Lifetime Prediction for Off-State – Degradation of MOS-FETs Muehlhoff, A.
 2001
 41 9-10 p. 1289-1293
5 p.
 artikel
5 Anode hole generation mechanisms Ghetti, A.
 2001
 41 9-10 p. 1347-1354
8 p.
 artikel
6 A Novel Application of the FIB Lift-out Technique for 3-D TEM Analysis Lee, Jon C.
 2001
 41 9-10 p. 1551-1556
6 p.
 artikel
7 A Novel Power Module Design and Technology for Improved Power Cycling Capability Scheuermann, U.
 2001
 41 9-10 p. 1713-1718
6 p.
 artikel
8 An overview of hot-carrier induced degradation in 0.25 μm Partially and Fully Depleted SOI N-MOSFET's Dieudonné, F.
 2001
 41 9-10 p. 1417-1420
4 p.
 artikel
9 Application of Scanning Probe Microscopy techniques in Semiconductor Failure Analysis Ebersberger, B.
 2001
 41 9-10 p. 1449-1458
10 p.
 artikel
10 A pragmatic methodology for the monitoring of the electronic components ageing: The case of power thyristors at EDF Simon, G.
 2001
 41 9-10 p. 1701-1705
5 p.
 artikel
11 A reliable course of Scanning Capacitance Microscopy analysis applied for 2D-Dopant Profilings of Power MOSFET Devices Leicht, M.
 2001
 41 9-10 p. 1535-1537
3 p.
 artikel
12 Author index 2001
 41 9-10 p. I-III
nvt p.
 artikel
13 Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation Desplats, R.
 2001
 41 9-10 p. 1539-1544
6 p.
 artikel
14 Coaxial Ion-Photon System Tsao, C.-C.
 2001
 41 9-10 p. 1483-1488
6 p.
 artikel
15 Contents 2001
 41 9-10 p. iii-viii
nvt p.
 artikel
16 Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides. Zander, D.
 2001
 41 9-10 p. 1355-1360
6 p.
 artikel
17 Damp Heat test on LiNbO optical modulators Furcas, P.
 2001
 41 9-10 p. 1603-1607
5 p.
 artikel
18 Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT Sydlo, C.
 2001
 41 9-10 p. 1567-1571
5 p.
 artikel
19 Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions Monsieur, F.
 2001
 41 9-10 p. 1295-1300
6 p.
 artikel
20 Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation Petersen, R.
 2001
 41 9-10 p. 1591-1596
6 p.
 artikel
21 Development of an EB/FIB Integrated Test System Miura, Katsuyoshi
 2001
 41 9-10 p. 1489-1494
6 p.
 artikel
22 Diamond-Coated Cantilevers for Scanning Capacitance Microscopy Applications Yabuhara, H.
 2001
 41 9-10 p. 1459-1463
5 p.
 artikel
23 Editorial 2001
 41 9-10 p. ix-
1 p.
 artikel
24 Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices Litzenberger, M.
 2001
 41 9-10 p. 1385-1390
6 p.
 artikel
25 Electric passivation of interface traps at drain junction space charge region in p-MOS transistors Chen, G.
 2001
 41 9-10 p. 1427-1431
5 p.
 artikel
26 Electromigration Performance of Multi-level Damascene Copper Interconnects Yokogawa, S.
 2001
 41 9-10 p. 1409-1416
8 p.
 artikel
27 Environmental Effects on Interfacial Adhesion Lane, M.W.
 2001
 41 9-10 p. 1615-1624
10 p.
 artikel
28 ESD-Induced Circuit Performance Degradation in RFICs Gonf, K.
 2001
 41 9-10 p. 1379-1383
5 p.
 artikel
29 ESD protection structures for BCD5 smart power technologies Sponton, L.
 2001
 41 9-10 p. 1683-1687
5 p.
 artikel
30 Evaluation method for the control of process induced defect in deep sub-micron device fabrication Ikeda, Kazuko
 2001
 41 9-10 p. 1525-1533
9 p.
 artikel
31 Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses Lambert, B.
 2001
 41 9-10 p. 1573-1578
6 p.
 artikel
32 Failures in ultrathin oxides: Stored energy or carrier energy driven? Bruyére, S.
 2001
 41 9-10 p. 1367-1372
6 p.
 artikel
33 Front Side and Backside OBIT Mappings applied to Single Event Transient Testing Lewis, D.
 2001
 41 9-10 p. 1471-1476
6 p.
 artikel
34 Full-Chip Reliability Simulation for VDSM Integrated Circuits Wu, Lifeng
 2001
 41 9-10 p. 1273-1278
6 p.
 artikel
35 Gate-lag effects in AlGaAs/GaAs power HFET's Borgarino, M.
 2001
 41 9-10 p. 1585-1589
5 p.
 artikel
36 High reliability power VDMOS Transistors in Bipolar/CMOS/DMOS technology Rey-Tauriac, Y.
 2001
 41 9-10 p. 1707-1712
6 p.
 artikel
37 High-resolution in-situ of gold electromigration: test time reduction Croes, K.
 2001
 41 9-10 p. 1439-1442
4 p.
 artikel
38 Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications Revil, N.
 2001
 41 9-10 p. 1307-1312
6 p.
 artikel
39 Improved Stability of Large Area Excimer Laser Crstallised Polysilicon Thin Film Transistors under DC and AC Operating Toutah, H.
 2001
 41 9-10 p. 1325-1329
5 p.
 artikel
40 Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs Bravaix, A.
 2001
 41 9-10 p. 1313-1318
6 p.
 artikel
41 Integrated power transistor size optimisation Bosc, J.M.
 2001
 41 9-10 p. 1671-1676
6 p.
 artikel
42 Introduction of InP high speed electronics into optical fiber transmission systems and current technological limits Scavennec, A.
 2001
 41 9-10 p. 1563-1566
4 p.
 artikel
43 Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs Meneghesso, G.
 2001
 41 9-10 p. 1609-1614
6 p.
 artikel
44 Laser diode COFD analysis by thermoreflectance microscopy Dilhaire, Stefan
 2001
 41 9-10 p. 1597-1601
5 p.
 artikel
45 Local lifetime control IGBT structures: turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs Azzopardi, S.
 2001
 41 9-10 p. 1731-1736
6 p.
 artikel
46 Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs Meneghesso, G.
 2001
 41 9-10 p. 1579-1584
6 p.
 artikel
47 Low frequency noise and reliability properties pf 0.12 μm CMOS devices with Ta2O5 as gate dielectrics Fadlallah, M.
 2001
 41 9-10 p. 1361-1366
6 p.
 artikel
48 Mechanical Reliability of MEMS-structures under shock load Wagner, U.
 2001
 41 9-10 p. 1657-1662
6 p.
 artikel
49 Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs Stojadinovic, N.
 2001
 41 9-10 p. 1373-1378
6 p.
 artikel
50 Modeling Thermal Laser Stimulation Beaudoin, F.
 2001
 41 9-10 p. 1477-1482
6 p.
 artikel
51 Non Contact Surface Potential Measurements for Charging Reduction During Manufacturing of Metal-Insulator-Metal Capacitors Ackaert, J.
 2001
 41 9-10 p. 1403-1407
5 p.
 artikel
52 Non-destructive tester for single event burnout of power diodes Busatto, G.
 2001
 41 9-10 p. 1725-1729
5 p.
 artikel
53 Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects Forster, S.
 2001
 41 9-10 p. 1677-1682
6 p.
 artikel
54 Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology Gagnard, X.
 2001
 41 9-10 p. 1335-1340
6 p.
 artikel
55 Power module lifetime estimation from chip temperature direct measurement in an automotive traction inverter Coquery, G.
 2001
 41 9-10 p. 1695-1700
6 p.
 artikel
56 Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation Ohyama, H.
 2001
 41 9-10 p. 1443-1448
6 p.
 artikel
57 Relevance of contact reliability in HBM-ESD test equipment Reiner, Joachim C.
 2001
 41 9-10 p. 1397-1401
5 p.
 artikel
58 Reliability improvements in passive components Fägerholt, Per-Olof
 2001
 41 9-10 p. 1279-1288
10 p.
 artikel
59 Reliability of Chip/DCB Solder Joints in AlSiC Base Plate Power Modules: Influence of Chip Size Thoben, M.
 2001
 41 9-10 p. 1719-1723
5 p.
 artikel
60 Reliability of non-hermetic pressure contact IGBT modules Schlegel, R.
 2001
 41 9-10 p. 1689-1694
6 p.
 artikel
61 Reliability of polycrystalline silicon thin film resistors Nakabayashi, M.
 2001
 41 9-10 p. 1341-1346
6 p.
 artikel
62 Reliability Studies on Multilevel Interconnection with Intermetal Dielectric Air Gaps Sukharev, V.
 2001
 41 9-10 p. 1631-1635
5 p.
 artikel
63 RF Packaging for Space Applications: from Micropackage to SOP – “System On a Package” Drevon, Claude
 2001
 41 9-10 p. 1649-1656
8 p.
 artikel
64 Silicon Thinning and Polishing on Packaged Devices Beaudoin, F.
 2001
 41 9-10 p. 1557-1561
5 p.
 artikel
65 Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges Guilhaume, A.
 2001
 41 9-10 p. 1433-1437
5 p.
 artikel
66 Stress induced leakage current at low field in ultra thin oxides Lime, F.
 2001
 41 9-10 p. 1421-1425
5 p.
 artikel
67 Substrate Engineering to Improve Soft-Error-Rate Immunity for SRAM Technologies Puchner, H.
 2001
 41 9-10 p. 1319-1324
6 p.
 artikel
68 Theoretical Investigation of an Equivalent Laser LET Pouget, V.
 2001
 41 9-10 p. 1513-1518
6 p.
 artikel
69 Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures Bychikhin, S.
 2001
 41 9-10 p. 1501-1506
6 p.
 artikel
70 Thermal fatigue in solder joints of Ag-Pd and Ag-Pt metallized LTCC modules Rautioaho, R.
 2001
 41 9-10 p. 1643-1648
6 p.
 artikel
71 Thermal management and reliability of multi-chip power modules Lefranc, G.
 2001
 41 9-10 p. 1663-1669
7 p.
 artikel
72 Thermomechanical stress analysis of Cu/low-k dielectric interconnect schemes Mathewson, Alan
 2001
 41 9-10 p. 1637-1641
5 p.
 artikel
73 The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors Tošić Golo, N.
 2001
 41 9-10 p. 1391-1396
6 p.
 artikel
74 Three-Dimensional Voids Simulation in chip Metallization Structures: a Contribution to Reliability Evaluation Dalleau, D.
 2001
 41 9-10 p. 1625-1630
6 p.
 artikel
75 Ultra-Thinning of C4 Integrated Circuits for Backside Analysis during First Silicon Debug Lundquist, T.
 2001
 41 9-10 p. 1545-1549
5 p.
 artikel
76 Unique and Practical IC Timing Analysis Tool Utilizing Intrinsic Photon Emission Goldblatt, Norman
 2001
 41 9-10 p. 1507-1512
6 p.
 artikel
77 Wafer Level Accelerated test for ionic contamination control on VDMOS transistors in Bipolar/CMOS/DMOS Rey-Tauriac, Y.
 2001
 41 9-10 p. 1331-1334
4 p.
 artikel
78 Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies Tsang, J.C.
 2001
 41 9-10 p. 1465-1470
6 p.
 artikel
                             78 gevonden resultaten
 
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