| nr |
titel |
auteur |
tijdschrift |
jaar |
jaarg. |
afl. |
pagina('s) |
type |
| 1 |
Analysis of gamma-irradiation induced degradation mechanisms in power VDMOSFETS
|
Stojadinović, N.
|
|
1995
|
35 |
3 |
p. 587-602
16 p.
|
artikel
|
| 2 |
Border traps: Issues for MOS radiation response and long-term reliability
|
Fleetwood, D.M.
|
|
1995
|
35 |
3 |
p. 403-428
26 p.
|
artikel
|
| 3 |
Characterization of functional relationship between temperature and microelectronic reliability
|
Lall, Pradeep
|
|
1995
|
35 |
3 |
p. 377-402
26 p.
|
artikel
|
| 4 |
Design of integrated BiCMOS operational amplifiers with low-probability EMI-induced-failures
|
Mattei, P.
|
|
1995
|
35 |
3 |
p. 567-586
20 p.
|
artikel
|
| 5 |
Dielectric breakdown and reliability of MOS microstructures: Traditional characterization and low-frequency noise measurements
|
Neri, B.
|
|
1995
|
35 |
3 |
p. 529-537
9 p.
|
artikel
|
| 6 |
Difference between the 1 f noise spectral density before and after stress as a measure of the submicron MOS transistors degradation
|
Grabowski, Franciszek
|
|
1995
|
35 |
3 |
p. 511-528
18 p.
|
artikel
|
| 7 |
Editorial
|
Stojadinović, N.D.
|
|
1995
|
35 |
3 |
p. 321-322
2 p.
|
artikel
|
| 8 |
Evaluation and detection of CMOS-LSI with abnormal IDDQ
|
Sanada, Masaru
|
|
1995
|
35 |
3 |
p. 619-629
11 p.
|
artikel
|
| 9 |
Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs
|
Anderson, S.R.
|
|
1995
|
35 |
3 |
p. 603-608
6 p.
|
artikel
|
| 10 |
High field dynamic stress of thin SiO2 films
|
Nafría, M.
|
|
1995
|
35 |
3 |
p. 539-553
15 p.
|
artikel
|
| 11 |
IC failure analysis: Techniques and tools for quality and reliability improvement
|
Soden, Jerry M.
|
|
1995
|
35 |
3 |
p. 429-453
25 p.
|
artikel
|
| 12 |
Modeling study of the experimental techniques for the characterization of MOSFET hot-carrier aging
|
Habaš, Predrag
|
|
1995
|
35 |
3 |
p. 481-510
30 p.
|
artikel
|
| 13 |
Noise as a diagnostic and prediction tool in reliability physics
|
Jevtić, M.M.
|
|
1995
|
35 |
3 |
p. 455-477
23 p.
|
artikel
|
| 14 |
Reliability issues of scaled-down MOS transistors for gigabit circuits
|
Krautschneider, Wolfgang H.
|
|
1995
|
35 |
3 |
p. 365-376
12 p.
|
artikel
|
| 15 |
The applicability of logarithmic extreme value distributions in electomigration induced failures of Al Cu thin-film interconnects
|
Loupis, M.I.
|
|
1995
|
35 |
3 |
p. 611-617
7 p.
|
artikel
|
| 16 |
The ESD protection mechanisms and the related failure modes and mechanisms observed in SOI snapback nMOSFET's
|
Verhaege, Koen
|
|
1995
|
35 |
3 |
p. 555-566
12 p.
|
artikel
|
| 17 |
Thermal stability of Al Ni gate AlGaAs GaAs HEMT's
|
de Munari, Ilaria
|
|
1995
|
35 |
3 |
p. 631-635
5 p.
|
artikel
|
| 18 |
VLSI reliability challenges: From device physics to wafer scale systems
|
Takeda, Eiji
|
|
1995
|
35 |
3 |
p. 325-363
39 p.
|
artikel
|
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